Abstract: The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.

Abstract: A field emission device 100 comprises an anode 105 and a cathode 110 separated by a distance 115 from the anode. At least one of the anode or cathode is configured to move with respect to the other in response to an applied voltage 120 to at least one of the anode and cathode, the distance being adjustable by the movement.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of three operating layers 12, 13, 14. An addressing layer 12 is fabricated on the substrate. A hinge layer 13 is spaced above the addressing layer 12 by an air gap. A mirror layer 14 is spaced over the hinge layer 13 by a second air gap. The hinge layer 13 has a hinge 13a under and attached to the mirror 14a, the hinge 13a permitting the mirror 14a to tilt. The hinge layer 13 further has spring tips 13c under the mirror 14a, which are attached to the addressing layer 12. These spring tips 13c provide a stationary landing surface for the mirror 14a.

Abstract: The present invention provides a method for manufacturing a digital micromirror device and a method for manufacturing a projection display system. The method for manufacturing the digital micromirror device, without limitation, may include providing a material stack, the material stack including a spacer layer having one or more openings therein and located over control circuitry located on or in a semiconductor substrate, a layer of hinge material located over the spacer layer and within the one or more openings, and a layer of hinge support material located over the layer of hinge material and within the one or more openings. The method may further include patterning the layer of hinge support material using photoresist, patterning the layer of hinge material using the patterned layer of hinge support material as a hardmask, and removing the patterned layer of hinge support material from over an upper surface of the patterned layer of hinge material.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of four operating layers 12, 13, 14, 15. An addressing layer 12 is fabricated on the substrate. A raised electrode layer 13 is spaced above the addressing layer by an air gap. A hinge layer 14 is spaced above the raised electrode layer 13 by another air gap. A mirror layer 15 is spaced over the hinge layer 14 by a third air gap.

Abstract: The present invention provides a method for manufacturing a digital micromirror device and a method for manufacturing a projection display system. The method for manufacturing the digital micromirror device may include providing a material stack, the material stack including a spacer layer having one or more openings therein and located over control circuitry located on or in a semiconductor substrate, a layer of hinge material located over the spacer layer and within the one or more openings, and a layer of hinge support material located over the layer of hinge material and within the one or more openings. The method may further include patterning the layer of hinge support material using photoresist, patterning the layer of hinge material using the patterned layer of hinge support material as a hardmask, and removing the patterned layer of hinge support material from over an upper surface of the patterned layer of hinge material.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of four operating layers 12, 13, 14, 15. An addressing layer 12 is fabricated on the substrate. A raised electrode layer 13 is spaced above the addressing layer by an air gap. A hinge layer 14 is spaced above the raised electrode layer 13 by another air gap. A mirror layer 15 is spaced over the hinge layer 14 by a third air gap.

Abstract: The present invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include providing a spacer layer over a substrate, the spacer layer having one or more openings therein, and forming a first conductive layer over the spacer layer and within the one or more openings. The method may further include subjecting the first conductive layer to an anisotropic etch, the anisotropic etch exposing at least a portion of the substrate within the one or more openings, but leaving the spacer layer substantially covered, and forming a second conductive layer over the first conductive layer and within the one or more openings, the second conductive layer contacting the substrate exposed by the anisotropic etch.

Abstract: A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop clean process that removes polymer residues from the pattern resist surface. Next is an ash to remove the hardened pattern resist surface, followed by removal of the pattern resist.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of three operating layers 12, 13, 14. An addressing layer 12 is fabricated on the substrate. A hinge layer 13 is spaced above the addressing layer 12 by an air gap. A mirror layer 14 is spaced over the hinge layer 13 by a second air gap. The hinge layer 13 has a hinge 13a under and attached to the mirror 14a, the hinge 13a permitting the mirror 14a to tilt. The hinge layer 13 further has spring tips 13c under the mirror 14a, which are attached to the addressing layer 12. These spring tips 13c provide a stationary landing surface for the mirror 14a.

Abstract: In accordance with the invention, there is a semiconductor device comprising optical enhancement medium and there are methods of end point detection in an etching process and also in a planarization process using an optical enhancement medium such as an anti-reflective coating. The method can include forming a semiconductor structure having at least one trench in a first layer, forming a layer of anti-reflective coating over the first layer, depositing a second layer of material over the anti-reflective layer, and etching the second layer and the anti-reflective layer. The method can also include monitoring an optical signal from the etching process and stopping the etching process at a predetermined time after observing the optical signal from a plasma enhanced optical excitation of the anti-reflective coating and thereby detecting an endpoint of the etching process.

Abstract: As robust hinge post structure for use with torsional hinged devices such as micromirrors and method of manufacturing is disclosed. The fabrication process uses a protective layer such as BARC on the bottom of the aperture used to form the hinge post structure to protect an oxide layer during an etching step. The oxide layer, in turn protects the metal layer at the bottom of the aperture. Therefore, the metal layer, the oxide layer, and the protective layer prevent the erosion and/or pitting of the bottom electrode during a cleaning process, and provide additional support to the structure.

Abstract: A micromirror array fabricated on a semiconductor substrate. The array is comprised of three operating layers. An addressing layer is fabricated on the substrate. A hinge layer is spaced above the addressing layer by an air gap. A mirror layer is spaced over the hinge layer by a second air gap. The hinge layer has a hinge under and attached to the mirror, the hinge permitting the mirror to tilt. The hinge layer further has spring tips under the mirror, which are attached to the addressing layer. These spring tips provide a stationary landing surface for the mirror.

Abstract: The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.

Abstract: The present invention provides a method for manufacturing a digital micromirror device and a method for manufacturing a projection display system. The method for manufacturing the digital micromirror device, without limitation, may include providing a material stack (130), the material stack (130) including a spacer layer (140) having one or more openings (145) therein and located over control circuitry (110) located on or in a semiconductor substrate (105), a layer of hinge material (150) located over the spacer layer (140) and within the one or more openings (145), and a layer of hinge support material (160) located over the layer of hinge material (150) and within the one or more openings (145).

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of four operating layers 12, 13, 14, 15. An addressing layer 12 is fabricated on the substrate. A raised electrode layer 13 is spaced above the addressing layer by an air gap. A hinge layer 14 is spaced above the raised electrode layer 13 by another air gap. A mirror layer 15 is spaced over the hinge layer 14 by a third air gap.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of four operating layers 12, 13, 14, 15. An addressing layer 12 is fabricated on the substrate. A raised electrode layer 13 is spaced above the addressing layer by an air gap. A hinge layer 14 is spaced above the raised electrode layer 13 by another air gap. A mirror layer 15 is spaced over the hinge layer 14 by a third air gap.

Abstract: A field emission device 100 comprises an anode 105 and a cathode 110 separated by a distance 115 from the anode. At least one of the anode or cathode is configured to move with respect to the other in response to an applied voltage 120 to at least one of the anode and cathode, the distance being adjustable by the movement.

Abstract: As robust hinge post structure for use with torsional hinged devices such as micromirrors and method of manufacturing is disclosed. The fabrication process uses a protective layer such as BARC on the bottom of the aperture used to form the hinge post structure to protect an oxide layer during an etching step. The oxide layer, in turn protects the metal layer at the bottom of the aperture. Therefore, the metal layer, the oxide layer, and the protective layer prevent the erosion and/or pitting of the bottom electrode during a cleaning process, and provide additional support to the structure.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of four operating layers 12, 13, 14, 15. An addressing layer 12 is fabricated on the substrate. A raised electrode layer 13 is spaced above the addressing layer by an air gap. A hinge layer 14 is spaced above the raised electrode layer 13 by another air gap. A mirror layer 15 is spaced over the hinge layer 14 by a third air gap.