Abstract: A fibre-optic module incorporating a semiconductor optical amplifier is compatible with a standard specification for a fibre-optic transceiver module, which is typically pluggable. The module comprises optical connectors capable of connection to first and second optical fibres and being in accordance with said standard specification and the input optical signal received from the first optical fibre is amplified by the semiconductor optical amplifier and supplied to the second optical connector for transmission along the second optical fibre. The module further comprises an electrical parallel connector having a physical configuration in accordance with said standard specification and a control circuit which receives control signals from the electrical parallel connector and to control the operation of the optical amplifier. Thus the module maybe connected to a standard electrical backplane alongside fibre-optic transceiver modules to augment the optical performance of the transceiver modules.

Abstract: An optical amplifier is disclosed comprising a signal semiconductor optical amplifier having a waveguide, forming at least part of a signal path between an input and an output, extending along a signal active region for amplification of a signal. The amplifier also includes a control active region of semiconductor material having a gain which is controllable independently from the gain of the signal active region. The amplifier also includes a laser cavity containing both the signal active region and the control active region and being capable of clamping the gain of the signal active region, and the control active region is arranged not to amplify a signal in the signal path within a predetermined signal band.

Abstract: A semiconductor optical device comprises an active waveguide having a tapered portion, and a passive waveguide extending beyond the end of the active waveguide and optically coupled to the tapered portion of the active waveguide. The passive waveguide beyond the end of the active waveguide supports an optical mode of larger size than the optical mode supported by the active waveguide. The tapered portion of the active waveguide is truncated and the separation between the active waveguide and the passive waveguide is greater than in previously known devices in order to minimize or at least reduce the truncation loss at the truncation.

Abstract: An automatic power control system for automatic power control of a semiconductor optical amplifier arranged to amplify a signal has an automatic power control loop which provides automatic power control of the power of the amplified signal for maintaining the power of the amplified signal in the output from the semiconductor optical amplifier at a desired level. The automatic power control loop compensates for, an estimated level of amplified spontaneous emission in the detected output power using stored characteristics of the semiconductor optical amplifier. In one type of embodiment, a photodiode detects the output power of the semiconductor optical amplifier and a current detector detects the drive current of the semiconductor optical amplifier and the automatic power control loop uses both the detected output power of the semiconductor optical amplifier and the detected drive current.

Abstract: An array of SOAs integrated in a semiconductor chip 1 is optically coupled to an array of waveguides 12 arranged on a substrate 10 of a passive device by mounting the semiconductor chip 1 on the substrate 10 to form a hybrid optical assembly. The semiconductor chip 1 is manufactured with a redundant array of SOAs. In a first aspect, the array of SOAs A1, A2, etc are arranged with a pitch equal to the predetermined pitch at which the array of waveguides 12 are arranged on the substrate 11 divided by an integer greater than 1. In a second aspect, the SOA A, B, C are arranged at the same predetermined pitch at which the array of waveguides 12 are arranged, but the number of SOAs A, B, C in the array on the semiconductor chip 1 is greater than the number of waveguides 12 arranged on the substrate 10.

Abstract: A semiconductor optical device comprises an active waveguide having a tapered portion, and a passive waveguide extending beyond the end of the active waveguide and optically coupled to the tapered portion of the active waveguide. The passive waveguide beyond the end of the active waveguide supports an optical mode of larger size than the optical mode supported by the active waveguide. The tapered portion of the active waveguide is truncated and the separation between the active waveguide and the passive waveguide is greater than in previously known devices in order to minimize or at least reduce the truncation loss at the truncation.

Abstract: A semiconductor optical amplifier comprising an active gain region of the (In, Ga)(As, N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

Abstract: A semiconductor optical amplifier comprising an active gain region of the (In, Ga)(As, N) system is proposed, together with the use of (Ga, In)(As, N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga, In)(As, N) as the base material. The N content of the (In, Ga)(As, N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

Abstract: A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform.

Abstract: A tunable semiconductor laser comprises a propagation region in which a waveform can exist, the propagation region comprising sequential gain and control regions, the gain region comprising a light amplification region supplied by a source of excitation, and the control region comprising a periodic structure through which the waveform propagates. The control region can be linked to a source of current thereby to enable changes to be made to the refractive index thereof. It is preferred that the material of the propagation region is (Ga,In)(N,As). As a result, in the gain region the waveform will be less tightly confined and hence a higher gain can be produced without suffering from saturation of the gain material. Ideally, there will be tight confinement of the waveform in the control region to allow maximum advantage to be made of the change in refractive index.