Patents by Inventor Anthony F. Flannery, Jr.
Anthony F. Flannery, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210212616Abstract: Systems and methods to non-invasively measure sub-cutaneous processes in a patient are disclosed. Examples of systems may optically detect biological fluid properties. The optical detection techniques described herein may be incorporated into a wearable monitoring system. Examples of wearable monitoring systems may simultaneously measure a plurality of sensory modalities. Systems of the present disclosure may be mounted on the skin of a patient.Type: ApplicationFiled: March 29, 2021Publication date: July 15, 2021Inventors: Francis HONORE, James REICH, Anthony F. FLANNERY, JR., Samit Kumar GUPTA, Ramkumar ABHISHEK
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Patent number: 11045123Abstract: Systems and methods to non-invasively measure sub-cutaneous processes in a patient are disclosed. Examples of systems may optically detect biological fluid properties. The optical detection techniques described herein may be incorporated into a wearable monitoring system. Examples of wearable monitoring systems may simultaneously measure a plurality of sensory modalities. Systems of the present disclosure may be mounted on the skin of a patient.Type: GrantFiled: March 28, 2018Date of Patent: June 29, 2021Assignee: GRAFTWORX, Inc.Inventors: Francis Honore, James Reich, Anthony F. Flannery, Jr., Samit Kumar Gupta, Ramkumar Abhishek
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Publication number: 20200330011Abstract: Systems and methods to non-invasively measure sub-cutaneous processes in a patient are disclosed. Examples of systems may optically detect biological fluid properties. The optical detection techniques described herein may be incorporated into a wearable monitoring system. Examples of wearable monitoring systems may simultaneously measure a plurality of sensory modalities. Systems of the present disclosure may be mounted on the skin of a patient.Type: ApplicationFiled: March 28, 2018Publication date: October 22, 2020Applicant: Graftwork ,Inc.Inventors: Francis Honore, James Reich, Anthony F. Flannery Jr., Samit Kumar Gupta
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Publication number: 20170355597Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: ApplicationFiled: August 28, 2017Publication date: December 14, 2017Inventors: Steven S. NASIRI, Anthony F. Flannery, JR.
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Patent number: 9751752Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: GrantFiled: November 30, 2016Date of Patent: September 5, 2017Assignee: INVENSENSE, INC.Inventors: Steven S. Nasiri, Anthony F. Flannery, Jr.
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Publication number: 20170073223Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: ApplicationFiled: November 30, 2016Publication date: March 16, 2017Inventors: Steven S. NASIRI, Anthony F. Flannery, JR.
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Patent number: 9588194Abstract: A method and structure for operating a magnetoresistive sensor system includes applying a set-reset process wherein the set-reset signal is phased through the magnetoresistive element in such a way that the set-reset field of each region is not released until the adjacent field is aligned. Starting at one end of the magnetoresistive element, the set-reset signal is activated. This aligns the domains directly underneath the first of the set-reset elements. Before this field is released, the adjacent set-reset is activated, which aligned the domains in the adjacent field. Once the adjacent field has been realigned, the set-reset field in the first region can be released, and the set-reset field in the next region can be activated. In this way, no more than two set-reset elements must be active at any one time.Type: GrantFiled: February 1, 2013Date of Patent: March 7, 2017Assignee: mCube Inc.Inventor: Anthony F. Flannery, Jr.
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Patent number: 9533880Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: GrantFiled: September 14, 2015Date of Patent: January 3, 2017Assignee: INVENSENSE, INC.Inventors: Steven S. Nasiri, Anthony F. Flannery, Jr.
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Patent number: 9376312Abstract: An improved MEMS transducer apparatus and method. The method includes providing a movable base structure having a base surface region overlying a substrate and a center cavity with a cavity surface region. At least one center anchor structure and one spring structure can be spatially disposed within a substantially circular portion of the surface region. The spring structure(s) can be coupled the center anchor structure(s) to a portion of the cavity surface region. The substantially circular portion can be configured within a vicinity of the center of the surface region. At least one capacitor element, having a fixed and a movable capacitor element, can be spatially disposed within a vicinity of the cavity surface region. The fixed capacitor element(s) can be coupled to the center anchor structure(s) and the movable capacitor element(s) can be spatially disposed on a portion of the cavity surface region.Type: GrantFiled: September 18, 2013Date of Patent: June 28, 2016Assignee: mCube Inc.Inventors: Daniel N. Koury, Jr., Anthony F. Flannery, Jr.
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Patent number: 9340414Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.Type: GrantFiled: June 20, 2014Date of Patent: May 17, 2016Assignee: mCube Inc.Inventors: Shingo Yoneoka, Anthony F. Flannery, Jr.
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Publication number: 20160002029Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: ApplicationFiled: September 14, 2015Publication date: January 7, 2016Inventors: Steven S. NASIRI, Anthony F. Flannery, JR.
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Publication number: 20150315016Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.Type: ApplicationFiled: June 20, 2014Publication date: November 5, 2015Inventors: SHINGO YONEOKA, Anthony F. Flannery, JR.
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Patent number: 9139428Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: GrantFiled: January 16, 2014Date of Patent: September 22, 2015Assignee: INVENSENSE, INC.Inventors: Steven S. Nasiri, Anthony F. Flannery, Jr.
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Patent number: 8993362Abstract: A method and structure for fabricating a monolithic integrated MEMS device. The method includes providing a substrate having a surface region and forming at least one conduction material and at least one insulation material overlying at least one portion of the surface region. At least one support structure can be formed overlying at least one portion of the conduction and insulation surface regions, and at least one MEMS device can be formed overlying the support structure(s) and the conduction and insulation surface regions. In a variety of embodiments, the support structure(s) can include dielectric or oxide materials. The support structure(s) can then be removed and a cover material can be formed overlying the MEMS device(s), the conduction and insulation materials, and the substrate. In various embodiments, the removal of the support structure(s) can be accomplished via a vapor etching process.Type: GrantFiled: July 22, 2011Date of Patent: March 31, 2015Assignee: mCube Inc.Inventor: Anthony F. Flannery, Jr.
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Publication number: 20140131820Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: ApplicationFiled: January 16, 2014Publication date: May 15, 2014Applicant: InvenSense, Inc.Inventors: Steven S. NASIRI, Anthony F. Flannery, JR.
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Publication number: 20140024162Abstract: An improved MEMS transducer apparatus and method. The method includes providing a movable base structure having a base surface region overlying a substrate and a center cavity with a cavity surface region. At least one center anchor structure and one spring structure can be spatially disposed within a substantially circular portion of the surface region. The spring structure(s) can be coupled the center anchor structure(s) to a portion of the cavity surface region. The substantially circular portion can be configured within a vicinity of the center of the surface region. At least one capacitor element, having a fixed and a movable capacitor element, can be spatially disposed within a vicinity of the cavity surface region. The fixed capacitor element(s) can be coupled to the center anchor structure(s) and the movable capacitor element(s) can be spatially disposed on a portion of the cavity surface region.Type: ApplicationFiled: September 18, 2013Publication date: January 23, 2014Applicant: MCube Inc.Inventors: DANIEL N. KOURY, JR., Anthony F. Flannery, JR.
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Patent number: 8633049Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.Type: GrantFiled: December 21, 2011Date of Patent: January 21, 2014Assignee: Invensense, Inc.Inventors: Steven S. Nasiri, Anthony F. Flannery, Jr.
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Patent number: 8553389Abstract: An improved MEMS transducer apparatus and method is provided. The apparatus includes a movable base structure having a base surface region. An anchor structure is disposed within a substantially circular portion of the surface region typically at or near the center of the surface region. A spring structure is coupled to the anchor structure and at least one portion of the base surface region. A capacitor, having a fixed capacitor element and a movable capacitor element, are disposed near the base surface region. The fixed capacitor element can be coupled to the anchor structure and the movable capacitor element can be spatially disposed on a portion of the base surface region near the anchor structure.Type: GrantFiled: August 19, 2010Date of Patent: October 8, 2013Assignee: mCube Inc.Inventors: Daniel N. Koury, Jr., Anthony F. Flannery, Jr.