Patents by Inventor Anthony F. Levi

Anthony F. Levi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device comprising a perforated metal silicide layer
    Patent number: 4901121
    Abstract: A method for producing, without etching, a perforated layer of epitaxial metal silicide, especially CoSi.sub.2, on a single crystal Si substrate, with epitaxial Si overlying the silicide layer. The layer thickness, and the number and size of the openings in the layer are such as to make the structure suitable as an electronic device, in particular, as a permeable base transistor. The number and/or size of the openings is a function of processing parameters such as the substrate orientation, the annealing temperature of the film, or the Co/Si ratio of the deposited material. A device comprising a perforated silicide layer is also disclosed.
    Type: Grant
    Filed: April 18, 1988
    Date of Patent: February 13, 1990
    Assignee: American Telephone & Telegraph Co., AT&T Bell Labs.
    Inventors: John M. Gibson, John C. Hensel, Anthony F. Levi, Raymond T. Tung