Patents by Inventor Anthony Francis Flannery, Jr.

Anthony Francis Flannery, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120094435
    Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
    Type: Application
    Filed: December 21, 2011
    Publication date: April 19, 2012
    Applicant: Invensense Inc.
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, JR.
  • Patent number: 8084332
    Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: December 27, 2011
    Assignee: Invensense, Inc.
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, Jr.
  • Patent number: 7458263
    Abstract: A dual-axis sensor for measuring X and Y components of angular velocity in an X-Y sensor plane is provided. The dual-axis sensor includes a first subsensor for measuring the X component of angular velocity, and a second subsensor for measuring the Y component of angular velocity. The first subsensor and the second subsensor are contained within a single hermetic seal within the dual-axis sensor.
    Type: Grant
    Filed: November 18, 2005
    Date of Patent: December 2, 2008
    Assignee: Invensense Inc.
    Inventors: Steven S. Nasiri, Joseph Seeger, Martin Lim, Anthony Francis Flannery, Jr., Alexander Castro
  • Publication number: 20080283990
    Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
    Type: Application
    Filed: July 31, 2008
    Publication date: November 20, 2008
    Applicant: InvenSense Inc.
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, JR.
  • Patent number: 7442570
    Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: October 28, 2008
    Assignee: Invensence Inc.
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, Jr.
  • Patent number: 7250353
    Abstract: A MEMs (microelectromechanical systems) structure is provided. In one implementation, the MEMs structure includes a substrate wafer including a MEMs device formed on a surface of the substrate wafer, and a MEMs cover structure to cover the MEMs device formed on the surface of the substrate wafer. The MEMs cover structure comprises a first wafer bonded to a second wafer, in which only the first wafer of the MEMs cover structure is sawed through and not the second wafer of the MEMs cover structure during dicing of the MEMs structure.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: July 31, 2007
    Assignee: InvenSense, Inc.
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, Jr., Martin Lim
  • Patent number: 7250112
    Abstract: A method for making an angular velocity sensor having two masses which are laterally disposed in an X-Y plane and indirectly connected to a frame is provided. The two masses are linked together by a linkage such that they necessarily move in opposite directions along Z. Angular velocity of the sensor about the Y axis can be sensed by driving the two masses into Z-directed antiphase oscillation and measuring the angular oscillation amplitude thereby imparted to the frame.
    Type: Grant
    Filed: July 28, 2005
    Date of Patent: July 31, 2007
    Assignee: InvenSense Inc
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, Jr.
  • Patent number: 7247246
    Abstract: A wafer-scale fabrication method for providing MEMS assemblies having a MEMS subassembly sandwiched between and bonded to a cap and a base is provided. The MEMS subassembly includes at least one MEMS device element flexibly connected to the MEMS assembly. The vertical separation between the MEMS device element and an electrode on the base is lithographically defined. Precise control of this critical vertical gap dimension is thereby provided. Fabrication cost is greatly reduced by wafer scale integration.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: July 24, 2007
    Assignee: Atmel Corporation
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, Jr.
  • Patent number: 7104129
    Abstract: A MEMS assembly having a MEMS subassembly sandwiched between and bonded to a cap and a base is provided. The MEMS subassembly includes at least one MEMS device element flexibly connected to the MEMS assembly. The vertical separation between the MEMS device element and an electrode on the base is lithographically defined. Precise control of this critical vertical gap dimension is thereby provided.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: September 12, 2006
    Assignee: InvenSense Inc.
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, Jr.
  • Patent number: 6939473
    Abstract: A method for making an angular velocity sensor having two masses which are laterally disposed in an X-Y plane and indirectly connected to a frame provided. The two masses are linked together by a linkage such that they necessarily move in opposite directions along Z. Angular velocity of the sensor about the Y axis can be sensed by driving the two masses into Z-directed antiphase oscillation and measuring the angular oscillation amplitude thereby imparted to the frame. In a preferred embodiment, the angular velocity sensor is fabricated from a bulk MEMS gyroscope wafer, a cap wafer and a reference wafer. In a further preferred embodiment, this assembly wafers provides a hermetic barrier between the masses and an ambient environment.
    Type: Grant
    Filed: October 20, 2003
    Date of Patent: September 6, 2005
    Assignee: Invensense Inc.
    Inventors: Steven S. Nasiri, Anthony Francis Flannery, Jr.