Abstract: Dynamic IR radiation power control, beam steering and focus adjustment for use in a nanoscale IR spectroscopy system based on an Atomic Force Microscope. During illumination with a beam from an IR source, an AFM probe tip interaction with a sample due to local IR sample absorption is monitored. The power of the illumination at the sample is dynamically decreased to minimize sample overheating in locations/wavelengths where absorption is high and increased in locations/wavelengths where absorption is low to maintain signal to noise. Beam alignment and focus optimization as a function of wavelength are automatically performed.

Abstract: A system and method for automatic analysis of temperature transition data over an area of a sample surface. The system relies on the use of a microfabricated probe, which can be rapidly heated and cooled and has a sharp tip to provide high spatial resolution. The system also has fast x-y-z positioners, data collection, and algorithms that allow automatic analysis of and visualization of temperature transition data.

Abstract: Dynamic IR radiation power control, beam steering and focus adjustment for use in a nanoscale IR spectroscopy system based on an Atomic Force Microscope. During illumination with a beam from an IR source, an AFM probe tip interaction with a sample due to local IR sample absorption is monitored. The power of the illumination at the sample is dynamically decreased to minimize sample overheating in locations/wavelengths where absorption is high and increased in locations/wavelengths where absorption is low to maintain signal to noise. Beam alignment and focus optimization as a function of wavelength are automatically performed.

Abstract: A system and method for automatic analysis of temperature transition data over an area of a sample surface. The system relies on the use of a microfabricated probe, which can be rapidly heated and cooled and has a sharp tip to provide high spatial resolution. The system also has fast x-y-z positioners, data collection, and algorithms that allow automatic analysis of and visualization of temperature transition data.

Abstract: A solid state fuel cell is fabricated from three substructures. There is a nanostructure porous semiconductor anode which is surrounded by a non-porous ring. The pore size of the anode material is sufficiently large to allow hydrogen gas to flow through and is of a sufficiently high conductivity to easily permit current flow of electrons. One side of the anode has a layer of titanium and platinum catalyst sputtered or otherwise deposited on the surface with the pores to produce a coated surface with the catalyst entering and coating the walls of the pores. A cathode is made in a similar manner and is fabricated as is the anode. There is a center electrolytic section made from a low conductivity semiconductor material. The center electrolytic section has the coated side of the anode secured to one side and has the coated side of the cathode secured to the other side.

Abstract: A displacement transducer includes a load cell structure having a thick outer peripheral area, a thick inner central area and two symmetrical thin beams. The two beams are disposed along a common diameter of the structure and joins the outer peripheral area and the inner central area. At least one strain gauge is placed on a surface of one beam and at least one strain gauge is placed on a surface of the second beam. A top diaphragm cover member is secured to a top surface of the outer peripheral area and covers the two beams.

Abstract: A pressure header assembly has a closed front and back surface. The back surface has an aperture for accommodating a separate dual die pressure header. The dual die pressure header has an absolute and differential pressure sensor positioned thereon. A differential pressure port is located on a side surface of the pressure header assembly and is directed to a bore in the pressure header assembly. The bore contains an elongated tube which is positioned in the pressure header assembly and locked in place by means of a crush nut and locking nut assembly. One end of the tube is coupled to the differential pressure port, while the other end of the tube accommodates a differential pressure tube which is bent in an arcuate position and directed to the underside of the sensor of the differential sensor assembly mounted in the dual die pressure header.

Abstract: A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.

Abstract: A circuit produces an output that is proportional to the molar density of gas in a chamber. The circuit employs an operational amplifier which measures the temperature using a RTD or other element that changes resistance with temperature. The RTD is placed such that it produces a decreasing current draw at the inverting input of the operational amplifier as the temperature increases. This decreasing current draw in turn produces a decreasing voltage at the output of the operational amplifier. By changing the ratio of resistors connected to the non-inverting terminal of the operational amplifier one changes the offset of the output voltage. By changing the feedback resistor connected from the output of the operational amplifier to the inverting terminal and connecting the output of the inverting terminal to a voltage divider including the RTD device, one can change the gain with temperature.

Abstract: A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately.

Abstract: A high temperature pressure capacitor is fabricated utilizing two high temperature substrate wafers. The substrates may be silicon carbide (SiC) or aluminum nitride (AIN). The first substrate has a metal conductive plate positioned on a top surface thereof. The top surface and plate are covered with a dielectric layer. The second substrate has a plate accommodating recess on the top surface thereof. Deposited in the recess is a second conductive plate. The first and second wafers are bonded together via the dielectric layer where the first and second plates face each other. Upon application of a force to the first wafer the diaphragm portion of the first wafer deflects causing the first plate to move and thereby varying capacitance. An inductor may be fabricated on a bottom surface of the second wafer to provide an LC circuit whose resonant frequency varies as a function of capacitance and therefore as a function of pressure.

Abstract: A method to prevent the catastrophic failure of electrical contacts of silicon piezoresistive transducers located on a silicon wafer at temperatures above 600° C. comprising the steps of using a lead-free glass frit to surround the contacts and bonding the sensor wafer to a glass wafer employing a lead-free glass and utilizing a modified electrostatic bonding technique to join the silicon wafer to the lead-free glass wafer to form a high temperature SOI device.

Abstract: A method and apparatus for measuring knocking in internal combustion engines employs a high temperature transducer, which transducer is mounted within a cylinder. The output of the transducer is solely related to pressure. The output signal from the transducer is directed to the input of a high frequency amplifier associated with a band pass filter. In this manner the combustion signal can be filtered out and one provides a signal which is only indicative of the knocking signal and of the knocking frequencies. This signal can be analyzed simply and effectively by the use of a processor such as a multimeter or a microprocessor. In a similar manner the processor can compare the combustion and knocking signal without the band pass filtering with the knocking signal with the combustion signal filtered out.

Abstract: A pressure sensor header for a pressure transducer includes a header shell having a sensor cavity formed therein, a sensor element disposed in the sensor cavity, a fluid medium disposed in the sensor cavity, an isolation diaphragm closing the sensor cavity, and a joining arrangement disposed at an interface of the isolation diaphragm and the header shell, the joining arrangement joining the isolation diaphragm with the header shell. The isolation diaphragm is an integral unit comprising a thin membrane surrounded by a thicker outer ring. The joining arrangement has a recessed female joining element formed in one of the outer ring of the isolation diaphragm and the header shell, and a protruding male joining element formed on the other one of the outer ring of the isolation diaphragm and the header shell, the male joining element received in the female joining element.

Abstract: A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

Abstract: A hermetically sealed displacement sensor has strain gauges placed on thin flexible triangular shaped beams of a load beam cell. The strain gauges are enclosed in a hermetically sealed cavity which cavity is sealed by means of a cover plate placed over the load beam cell. The thin beams are connected together by a center hub and basically form two constant moment beams. There is a top isolation diaphragm member which is convoluted and to which a force is applied which applied force is transmitted to the thin flexible beams. The beams deflect and the sensors produce an output proportional to strain. The sensors on each beam are two in number wherein one sensor is placed in a longitudinal direction with respect to the beam while the other sensor is in a transverse position. The sensors may be wired to form a full Wheatstone bridge or half bridges may be employed. The electrical output from the strain gauge bridge is proportional to the deflection of the center of the sensor.

Abstract: A personal identification system employs a matrix of pressure sensors mounted to a plate having a template of a human hand. When a person's hand is placed on the plate and overlying the template a pressure profile of the person's hand is provided. This profile is compared with a stored pressure profile of the same person's hand. If the pressure points or profiles correlate a positive identification of the person is made.

Abstract: A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals.

Abstract: A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material region and larger bandgap material region defining at least one quantum dot; and, first and second electrodes electrically coupled to the first and second small bandgap material regions, respectively, wherein the electrodes are sufficiently proximate to said quantum dot to facilitate electron tunneling there between when a pressure is applied to the bandgap material defining the quantum dot.

Abstract: A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.