Patents by Inventor Anthony L. Chen

Anthony L. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8859432
    Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: October 14, 2014
    Assignee: Lam Research Corporation
    Inventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
  • Patent number: 8313635
    Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
    Type: Grant
    Filed: September 1, 2010
    Date of Patent: November 20, 2012
    Assignee: Lam Research Corporation
    Inventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
  • Publication number: 20100319813
    Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
    Type: Application
    Filed: September 1, 2010
    Publication date: December 23, 2010
    Applicant: Lam Research Corporation
    Inventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
  • Patent number: 7811409
    Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: October 12, 2010
    Assignee: Lam Research Corporation
    Inventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
  • Publication number: 20080178906
    Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
    Type: Application
    Filed: November 29, 2007
    Publication date: July 31, 2008
    Inventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
  • Patent number: 6711621
    Abstract: A system and method of implementing a NetWare Core Protocol (NCP) module within a sockets model, such as a Berkeley Systems Distribution (BSD) Sockets model, is disclosed wherein the NCP module has a NCP reliability sub-module and a NCP library sub-module. The BSD Sockets model has a sockets interface, one or more applications, an Internetwork Packet eXchange (IPX) network layer and a front plane. The system and method of the present invention is implemented such that the NCP library sub-module is located above the sockets interface and the NCP reliability sub-module is located below the sockets interface. This results in many advantages compared to prior implementations which had the entire NCP module located above the sockets layer, including increased performance due to the elimination of task switched data transfer and other interprocess communication steps, such as pipes and selects that impede performance.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: March 23, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shital Mitra, Anthony L. Chen
  • Patent number: 6344151
    Abstract: A gas purged viewport for endpoint detection in a gas phase processing chamber is provided which prevents contamination of an optical monitoring window by use of a purge gas flow. The purge gas purges the viewport and prevents deposition of byproducts and contaminants on the window which will adversely effect endpoint detection. The gas purge viewport includes a prechamber between the optically transparent window and the process chamber. The purge gas is passed through the prechamber and into the processing chamber to purge the window. The gas purge system may also be used to purge other parts such as sensors.
    Type: Grant
    Filed: April 27, 2000
    Date of Patent: February 5, 2002
    Assignee: Lam Research Corporation
    Inventors: Anthony L. Chen, John Holland
  • Patent number: 6074516
    Abstract: A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.
    Type: Grant
    Filed: June 23, 1998
    Date of Patent: June 13, 2000
    Assignee: Lam Research Corporation
    Inventors: Arthur M. Howald, Anthony L. Chen, Alan M. Schoepp
  • Patent number: 6071375
    Abstract: A gas purged viewport for endpoint detection in a gas phase processing chamber is provided which prevents contamination of an optical monitoring window by use of a purge gas flow. The purge gas purges the viewport and prevents deposition of byproducts and contaminants on the window which will adversely effect endpoint detection. The gas purge viewport includes a prechamber between the optically transparent window and the process chamber. The purge gas is passed through the prechamber and into the processing chamber to purge the window. The gas purge system may also be used to purge other parts such as sensors.
    Type: Grant
    Filed: December 31, 1997
    Date of Patent: June 6, 2000
    Assignee: Lam Research Corporation
    Inventors: Anthony L. Chen, John Holland