Abstract: An RF amplifier includes a transistor die, an impedance matching circuit, and a baseband termination circuit. The impedance matching circuit includes a first inductive element connected between a transistor terminal and a first node, a second inductive element connected between the first node and an RF input/output, and a first capacitance connected between the first node and a ground reference node. The baseband termination circuit includes a multiple-cell resonator and an envelope capacitor coupled in series between the first node and the ground reference node. The multiple-cell resonator includes at least 4 resonator cells. Each resonator cell includes an RF isolation inductor and an RF isolation capacitor coupled in parallel between the first node and the envelope capacitor, which form a parallel resonant circuit in proximity to a center operating frequency of the RF amplifier. The baseband termination circuit also includes one or more envelope resistors.

Abstract: A Doherty power amplifier includes a combining node is coupled to a carrier amplifier output and to a peaking amplifier output, and a reconfigurable output impedance transformer coupled between the combining node and a radio frequency (RF) output. The combining node is configured to combine an amplified carrier signal and an amplified peaking signal to produce a combined amplified signal. The reconfigurable output impedance transformer includes a phase shift element, a first variable capacitor, and a second variable capacitor. The phase shift element has an input end coupled to the combining node and an output end coupled to the RF output, and the phase shift element is configured to apply a phase shift to the combined amplified signal. The first variable capacitor is coupled to the input end of the first phase shift element, and the second variable capacitor coupled to the output end of the first phase shift element.

Abstract: An amplifier device includes an input port, an output port, a first amplifier that includes a first input terminal electrically coupled to the input port and a first output terminal electrically coupled to the output port, and a second amplifier that includes a second input terminal electrically coupled to the input port and a second output terminal electrically coupled to the output port. A first network that includes a first tunable element is electrically coupled to the first output terminal and is electrically coupled to a combining node. A second network that includes a second tunable element is electrically coupled to the combining node and electrically coupled to the output port.

Abstract: An amplifier device includes a first input terminal, a second input terminal, a first transistor having a first control electrode and first and second current-carrying electrodes, wherein the first control electrode is radio frequency (RF) coupled to the first input terminal and DC-coupled to a first bias network electrically coupled to the first control electrode, wherein the first bias network is configured to apply a first direct current (DC) bias to the first control electrode and is RF-isolated from the first control electrode. The amplifier device further includes a second transistor that includes a second control electrode that is RF coupled to the second input terminal and a second bias network electrically coupled to the second transistor, wherein the second bias network is configured to apply a second DC bias to the second transistor and is RF-isolated from the second transistor.

Abstract: An amplifier device having multiple amplification paths, such as a Doherty amplifier device, may include phase slope adjustment circuitry configured to adjust the frequency-dependent slope of the phase of an input carrier signal along a carrier path of the amplifier. By adjusting the phase slope of the input carrier signal in this way, the phase difference between carrier and peaking signals at an output combining node of the amplifier may be reduced, thereby reducing output power ripple of the amplifier. The phase slope adjustment circuitry may be a constant-k bandpass filter. The phase slope adjustment circuitry may have a zero-degree insertion phase at the center frequency of the amplifier. The phase slope adjustment circuitry may be implemented using surface mount inductors and capacitors.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a Doherty amplifier module includes a first amplifier die with a first output terminal, a second amplifier die with a second output terminal, and a wideband impedance inverter circuit electrically coupled between the first and second output terminals. The wideband impedance inverter circuit includes a network of capacitors, the network of capacitors including at least a series capacitor having a positive capacitance, a first shunt circuit having a first negative capacitance, and a second shunt circuit having a second negative capacitance.

Abstract: Doherty power amplifier (PA) devices (e.g., packages and modules) including integrated output combining networks are disclosed. In embodiments, the Doherty PA device includes a first amplifier die having a first transistor with a first output terminal at which a first amplified signal is generated, a second amplifier die having a second transistor with a second output terminal at which a second amplified signal is generated, and an output combining network. The output combining network includes, in turn, a combining node integrally formed with the second amplifier die and electrically coupled to the second output terminal. At least one die-to-die bond wire electrically couples the first output terminal to the combining node. The at least one die-to-die bond wire has an electrical length, which is results in a 90 degree phase shift imparted to the first amplified signal between the first output terminal and the combining node.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a Doherty amplifier module includes a first amplifier die with a first output terminal, a second amplifier die with a second output terminal, and a wideband impedance inverter circuit electrically coupled between the first and second output terminals. The wideband impedance inverter circuit includes a network of capacitors, the network of capacitors including at least a series capacitor having a positive capacitance, a first shunt circuit having a first negative capacitance, and a second shunt circuit having a second negative capacitance.

Abstract: Doherty power amplifier (PA) devices (e.g., packages and modules) including integrated output combining networks are disclosed. In embodiments, the Doherty PA device includes a first amplifier die having a first transistor with a first output terminal at which a first amplified signal is generated, a second amplifier die having a second transistor with a second output terminal at which a second amplified signal is generated, and an output combining network. The output combining network includes, in turn, a combining node integrally formed with the second amplifier die and electrically coupled to the second output terminal. At least one die-to-die bond wire electrically couples the first output terminal to the combining node. The at least one die-to-die bond wire has an electrical length, which is results in a 90 degree phase shift imparted to the first amplified signal between the first output terminal and the combining node.