Abstract: A microelectromechanical system (MEMS) switch assembly (10) and a method of forming the MEMBS switch assembly (10) is provided that includes a switching member (12) having a first portion (34) that is at least partially formed with a first material having a first dielectric constant and a second portion (36) that is at least partially formed with a second material having a second dielectric constant. Furthermore, the switching member (12) further includes a first lead (14) spaced apart from a second lead (16) for contacting the switching member (12). In operation, the switching member (12) is configured for movement such that the first portion (34) and second portion (36) of the switching member (12) can provide variable electrical connections between the first lead (14) and second lead (16).

Abstract: Methods and apparatus (40) of amplifying a telecommunication signal (41) are provided in accordance with the present invention. The apparatus (40) comprises an input transmission line (48) configured to receive the telecommunication signal (41), an output transmission line (50) configured to provide an amplified output of the telecommunication signal (41) and N amplifier sections (42, 44, 45, 46) having a transistor (52) connected to the input transmission line (48) and the output transmission line (50). The apparatus (40) further comprises a waveform controller (84) connected to the transistor 52 and also configured to identify a signal level of the telecommunication signal 41.

Abstract: A distributed amplifier (40) and a method (100) of operating the distributed amplifier (40) are provided in accordance with the present invention. The distributed amplifier (40) comprises an input transmission line (48), an output transmission line (50) and N amplifier sections (42,44,46) having a transistor (52) connected to the input transmission line (48) and the output transmission line (50).

Abstract: A high frequency semiconductor component (10) includes a first substrate (12) having a first surface (13) opposite a second surface (14), a first electrically conductive layer (16) supported by the first surface (13) of the first substrate (12), a second electrically conductive layer (17) supported by the second surface (14) of the first substrate (12) wherein the second electrically conductive layer (17) is electrically coupled to the first electrically conductive layer (16), a second substrate (19) having a first surface (20) and a second surface (21), a third electrically conductive layer (22) supported by the first surface (20) of the second substrate (19), and an electrically insulating layer (23) between the second and third electrically conductive layers (17, 22) wherein the second and third electrically conductive layers (17, 22) are electrically coupled together through the electrically insulating layer (23).

Abstract: A resonator includes a substrate (15) having a first dielectric constant, an insulative layer (16, 31) overlying the substrate (15) and having a second dielectric constant wherein the second dielectric constant is lower than the first dielectric constant, and a electrically conductive layer (11) overlying the insulative layer (16, 31). The resonator has a higher "Q" factor than the prior art.

Abstract: A multilayer planar transmission line (10) can be fabricated as a monolithic structure with series/shunt-connected components for integration in an MMIC device. The multilayer planar transmission line (10) includes a first transmission line structure (TL1) formed by a top conductor (14) and an interlevel conductor (16) separated by an interlevel dielectric (18). This structure is formed on one planar surface of a substrate (12), and a ground plane reference (20) is formed on the opposing surface, yielding second and third transmission line structures (TL2, TL3) formed by the groundplane reference and, respectively, the interlevel conductor (16) and the top conductor (14). The interlevel dielectric layer (18) is significantly thinner than the substrate dielectric, so that the first transmission line (TL1) is tightly coupled, and substantially unaffected by parasitics between the bottom of the interlevel conductor (16) and the groundplane reference (20).

Abstract: A coupler circuit (22) is provided including a substrate (24) having a base conductor (26) connected thereto. A conductive layer (28) is adjacent the substrate (24) and separated from conductors (32, 34) by a dielectric layer (30). The conductive layer (28) is operable to electromagnetically couple the first conductor (32) to the second conductor (34).

Abstract: A GaAs monolithic true logarithmic amplifier which includes at least one amplifier stage common to the two arms of the circuit, the two arms being independent thereafter, one having lower gain and higher compression point and the other arm having higher gain and lower compression point. The signals in the arms are then recombined off-chip to provide the same effect as in the prior art. The circuit includes an input stage which amplifies and gain shapes the input signal and then splits the signal into upper and lower paths. The upper path is a relatively lower gain and higher compression point path whereas the lower path is a relatively higher gain and lower compression point path. The upper path includes a FET with a very large gate width whereas the lower path includes plural cascaded FETs, the last of which has a very small gate width.

Abstract: A modulator comprising two differential FET pairs, each pair having a current generator feeding the source electrodes thereof, a voltage source being coupled between the drain electrodes of each pair and the current generator. A low frequency signal is applied to one of the gate electrodes of each pair, ninety degrees out of phase with each other and a high frequency signal is applied to the other of the gate electrodes of each pair, ninety degrees out of phase with each other. The result is that all of the generated frequencies except one side band is cancelled at the drain electrodes of the pairs. The particular side band recovered is determined by the direction of the ninety degree phase shift between the signals.

Abstract: A push-push broadband dielectric resonator oscillator circuit that operates in the K and Ka band frequency range has two oscillator circuits that oscillate at the same fundamental frequency. An antiphaseal relationship is maintained between the two oscillators through the use of a dielectric resonator and the desired frequency is obtained by vectorially combining the output signals of the two oscillators that have the antiphase relationship to obtain an output frequency that is twice the fundamental frequency of operation of each of the individual dielectric resonator oscillator circuits.

Abstract: A distributed balance frequency multiplier has a transmission line that is configured using lumped elements having connection points for inputting signals. Connected to each connection point is the output from a non-inverting amplifier which does not invert a signal applied thereto. A second transmission line is configured also using lumped element techniques and has connection points for receiving an inverted amplified signal whose odd harmonics are 180.degree. to the non-inverting amplified signals. The signal that is to be amplified is carried to both the non-inverting and the inverting amplifier by a third transmission line that also uses lumped elements distribution techniques to create a transmission line. The output of the first transmission line and the second transmission lines are tied together so that the odd harmonics due to the inverting amplification stages cancel and the even harmonics are additive, thereby achieving an effective multiplication of the input signal.

Abstract: A monolithic distributed mixer includes a plurality of dual gate field effect transistors (FETs) and first and second corresponding pluralities of T shaped constant K-filters connected respectively to first and second gates of the dual gate FETs for delaying in time the LO and RF voltages applied thereto whereby the phase shift is the same at each filter and the phase difference between the LO and RF at each FET is equal. Thus, the IF energy developed at each drain is in phase. The plurality of dual gate FETs have their drains commonly connected for summing the IF outputs thereof to provide a flat response throughout the bandwidth which is limited only by the cutoff voltages of the FETs or first and second pluralities of K-filters which act as low pass filters.

Abstract: A -3 dB microwave quadrature coupler is provided on a single layer dielectric substrate and employs only two conductor coupling lines and a relatively wide, cost efficiently manufacturable coupling gap. The substrate is suspended within a mounting case providing a minimum spacing above and below the substrate. The ground plane is on the bottom of the substrate. Microstrip conductor ports are on the top of the substrate and are connected to a pair of parallel spaced coplanar conductor lines on top of the substrate juxtaposed a cut-out region of the ground plane therebelow. The coplanar conductor lines are balanced and coupled to each other, not to the ground plane nor to the mounting case. The coupler is compact, with a reduced length of .lambda./8. The coupler is amenable to implementation on inexpensive low dielectric constant substrate material, still with a relatively wide coupling gap.

Abstract: A double slot balun has two pairs of coplanar, electric conductive sheets in a superposed, spaced, electrically insulated relation on opposite planar surfaces of a dielectric substrate forming two slots disposed in spaced, parallel planes. Unbalanced signals applied simultaneously to common ends of the slots result in balanced in-phase signals at the opposite end of the two slots. A constant impedance balun has two alined, electric conductive strips in a superposed, spaced, electrically insulated relation mounted on opposite planar surfaces of a dielectric substrate with the widths at opposite ends of each conductive strip being chosen for selected parallel-plate impedance characteristics and one conductive strip having a selected taper, preferably following a cosine curve, while the width of the other conductive strip is selected relative to the cosine taper along its length to provide a constant impedance at any point along the length of the two conductive strips.