Patents by Inventor Anthony Mark Miscione

Anthony Mark Miscione has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190115367
    Abstract: Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.
    Type: Application
    Filed: April 9, 2018
    Publication date: April 18, 2019
    Inventors: James S. Cable, Anthony Mark Miscione, Ronald Eugene Reedy
  • Patent number: 9947688
    Abstract: Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: April 17, 2018
    Assignee: pSemi Corporation
    Inventors: James S. Cable, Anthony Mark Miscione, Ronald Eugene Reedy
  • Patent number: 9824915
    Abstract: The invention relates to a structure for radiofrequency applications comprising: a monocrystalline substrate, a polycrystalline silicon layer directly on the monocrystalline substrate, and an active layer on the polycrystalline silicon layer intended to receive radiofrequency components. At least a first portion of the polycrystalline silicon layer extending from an interface of the polycrystalline silicon layer with the monocrystalline substrate layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon layer at a concentration of between 2% and 20%. A process for manufacturing such a structure includes, during deposition of at least a first portion of such a polycrystalline silicon layer located at the interface with the monocrystalline substrate, depositing carbon and/or atoms in the at least a first portion.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: November 21, 2017
    Assignees: Soitec, Peregrine Semiconductor Corporation
    Inventors: Bich-Yen Nguyen, Christophe Maleville, Sinan Goktepeli, Anthony Mark Miscione, Alain Duvallet
  • Publication number: 20170084478
    Abstract: The invention relates to a structure for radiofrequency applications comprising: a monocrystalline substrate, a polycrystalline silicon layer directly on the monocrystalline substrate, and an active layer on the polycrystalline silicon layer intended to receive radiofrequency components. At least a first portion of the polycrystalline silicon layer extending from the interface of the polycrystalline silicon layer with the monocrystalline layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon at a concentration of between 2% and 20%. A process for manufacturing such a structure includes, during deposition of at least a first portion of such a polycrystalline silicon layer located at the interface with the monocrystalline substrate, depositing carbon and/or atoms in the portion.
    Type: Application
    Filed: September 14, 2016
    Publication date: March 23, 2017
    Inventors: Bich-Yen Nguyen, Christophe Maleville, Sinan Goktepeli, Anthony Mark Miscione, Alain Duvallet
  • Patent number: 9390942
    Abstract: Embodiments of preparing substrates for subsequent bonding with semiconductor layer are described herein. A substrate may be prepared with one or more chemicals or a sacrificial layer to limit or remove substrate contaminants and reduce substrate surface damage. Other embodiments may be described and claimed.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: July 12, 2016
    Assignee: Peregrine Semiconductor Corporation
    Inventors: Hiroshi Domyo, Michael McCafferty, Alain Duvallet, Masaki Sato, Christopher O'Brien, Anthony Mark Miscione, George Imthurn
  • Publication number: 20150243548
    Abstract: A method and structure for control of FET back-channel interface characteristics of an integrated circuit by implanting of selected implantation species at or near a device interface accessible during manufacture of the integrated circuit using layer transfer technology, without adversely affecting the structure or characteristics of a principal front-side FET.
    Type: Application
    Filed: February 27, 2014
    Publication date: August 27, 2015
    Applicant: PEREGRINE SEMICONDUCTOR CORPORATION
    Inventors: Anthony Mark Miscione, James S. Cable
  • Publication number: 20130154049
    Abstract: Novel integrated circuits (ICs) on ceramic wafers and methods of fabricating ICs on ceramic wafers are disclosed. In one embodiment, an active layer comprising IC circuit components is coupled to a selected wafer comprising a ceramic. A surface of the ceramic is processed to enable direct bonding between the selected wafer and the active layer. Another embodiment comprises an active layer comprising IC circuit components and a selected wafer comprising a ceramic and an intermediate layer. A surface of the intermediate layer is processed to enable direct bonding. In some embodiments the intermediate layer comprises a material selected from the following: silicon carbide, silicon dioxide, silicon nitride and diamond. Methods of fabrication are described, wherein layer transfer technology is employed to form active layers and to couple the active layers to the selected wafers.
    Type: Application
    Filed: June 20, 2012
    Publication date: June 20, 2013
    Inventors: George Imthurn, Tyler Branden Benner, Anthony Mark Miscione
  • Publication number: 20130154088
    Abstract: Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.
    Type: Application
    Filed: June 20, 2012
    Publication date: June 20, 2013
    Inventors: James S. Cable, Anthony Mark Miscione, Ronald Eugene Reedy
  • Patent number: 6136678
    Abstract: A method for processing a conductive layer, such as a doped polysilicon layer (14) of a gate stack, provides a degas step after precleaning to reduce particle count and defectivity. The conductive layer is provided on a substrate (10), e.g., a silicon wafer. The substrate (10) and conductive layer are subjected to an elevated temperature, under a vacuum, whereby certain species are liberated. The substrate having the conductive layer formed thereon is then removed from the chamber, and moved to a second, separate chamber, in which a second conductive layer (20) is deposited. By switching chambers, the liberated species are largely prevented from contributing to particle count at the interface between the conductive layers. Alternatively, the second conductive layer is formed in the same chamber, provided that the liberated species are removed from the chamber prior to deposition of the second conductive layer.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: October 24, 2000
    Assignee: Motorola, Inc.
    Inventors: Olubunmi Adetutu, James D. Hayden, Chitra Subramanian, Archana Redkar, Anthony Mark Miscione, Mark G. Fernandes