Patents by Inventor Anthony Mark Pasqualoni

Anthony Mark Pasqualoni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
    Publication number: 20040159050
    Abstract: A novel CMP slurry composition used for polishing metals, the composition comprising: a dispersion solution comprising an abrasive. The slurry composition has a large particle count of about 25 to about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Application
    Filed: December 1, 2003
    Publication date: August 19, 2004
    Applicant: ARCH SPECIALTY CHEMICALS, INC.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
    Patent number: 6749488
    Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Grant
    Filed: October 9, 2002
    Date of Patent: June 15, 2004
    Assignee: Planar Solutions LLC
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
    Publication number: 20030104770
    Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Application
    Filed: April 30, 2001
    Publication date: June 5, 2003
    Applicant: ARCH SPECIALTY CHEMICALS, INC.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
    Publication number: 20030064671
    Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Application
    Filed: October 9, 2002
    Publication date: April 3, 2003
    Applicant: Arch Specialty Chemicals, Inc.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Ready-to-use stable chemical-mechanical polishing slurries
    Patent number: 6468913
    Abstract: In accordance with the invention, there is provided a chemical-mechanical polishing slurry for polishing a substrate. The slurry is comprised primarily of abrasive particles and an oxidizing agent, wherein the slurry exhibits a stability having a shelf life of at least 30 days.
    Type: Grant
    Filed: July 8, 2000
    Date of Patent: October 22, 2002
    Assignee: Arch Specialty Chemicals, Inc.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar
  • Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
    Patent number: 6083840
    Abstract: The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, low defect densities and reduced amounts of dishing and erosion. The method involves a two step process. The first step is to utilize a bulk copper removal slurry that rapidly removes the majority the copper on the substrate. The second step utilizes a 1:1:1 selectivity copper/tantalum/silicon dioxide (Cu/Ta/SiO.sub.2) slurry that has approximately the same polishing rates for the copper layer, the adhesion-promoting layer and the silicon-based substrate. The second slurry reduces the amount of dishing and erosion that occurs in the copper trenches and dense copper arrays.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: July 4, 2000
    Assignee: Arch Specialty Chemicals, Inc.
    Inventors: Brian Mravic, deceased, Anthony Mark Pasqualoni, Deepak Mahulikar