Abstract: A method of forming a low-dielectric-constant amorphous hydrogenated boron carbide film on a substrate includes positioning the substrate within a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a boron carbide precursor and introducing the boron carbide precursor into a carrier gas to form a carrier gas-precursor mixture. The method also includes introducing the carrier gas-precursor mixture into the PECVD chamber. The method also includes applying radio frequency power within the PECVD chamber to the carrier gas-precursor mixture to form one or more plasmas containing one or more species containing at least one of boron, carbon or hydrogen. The method also includes forming the low-dielectric-constant amorphous hydrogenated boron carbide film on the substrate within the PECVD chamber.

Abstract: A neutron detection apparatus includes a neutron detector and an analyzer. The neutron detector includes a plurality of neutron detector assemblies, where each of the neutron detector assemblies includes a plurality of neutron detection devices. The neutron detector also includes a moderating volume. The plurality of neutron detector assemblies are disposed within the moderating volume so as to form a three-dimensional array of neutron detection devices within the moderating volume. The analyzer is communicatively coupled to each of the neutron detection devices of the plurality of neutron detector assemblies. The analyzer configured to receive one or more measured response signals from each of the neutron detection devices, and perform one or more analysis procedures to determine one or more characteristics associated with the one or more neutron sources based at least on the received one or more measured response signals.

Abstract: A neutron detection apparatus includes a neutron detector and an analyzer. The neutron detector includes a plurality of neutron detector assemblies, where each of the neutron detector assemblies includes a plurality of neutron detection devices. The neutron detector also includes a moderating volume. The plurality of neutron detector assemblies are disposed within the moderating volume so as to form a three-dimensional array of neutron detection devices within the moderating volume. The analyzer is communicatively coupled to each of the neutron detection devices of the plurality of neutron detector assemblies. The analyzer configured to receive one or more measured response signals from each of the neutron detection devices, and perform one or more analysis procedures to determine one or more characteristics associated with the one or more neutron sources based at least on the received one or more measured response signals.

Abstract: A neutron detection system may include a neutron detector including a plurality of neutron detection devices, a plurality of discrete neutron moderating elements, wherein each of the neutron moderating elements is disposed between two or more neutron detection devices, the plurality of neutron detection devices and the plurality of discrete neutron moderating elements disposed along a common axis, a control system configured to generate a detector response library, wherein the detector response library includes one or more sets of data indicative of a response of the detector to a known neutron source, receive one or more measured neutron response signals from each of the neutron devices, the one or more measured response signals response to a detected neutron event, and determine one or more characteristics of neutrons emanating from a measured neutron source by comparing the one or more measured neutron response signals to the detector response library.

Abstract: A neutron detection system includes a plurality of neutron detector assemblies, the neutron detector assemblies including a plurality of neutron detection devices, wherein the neutron detection devices are configured to detect one or more characteristics of neutrons emanating from one or more neutron sources and impinging on one or more neutron detection devices; a plurality of discrete moderating elements, wherein each of the discrete moderating elements is disposed proximate to at least one neutron detector assembly, the plurality of neutron detector assemblies and the plurality of discrete moderating elements disposed along a common axis, wherein the discrete moderating elements are configured to moderate the energy of neutrons impinging on one or more of the neutron-photon detector assemblies; and a control system configured to: determine one or more characteristics associated with the one or more neutron sources based on the received one or more measured response signals.

Abstract: A neutron detection system may include a neutron detector including a plurality of neutron detection devices, a plurality of discrete neutron moderating elements, wherein each of the neutron moderating elements is disposed between two or more neutron detection devices, the plurality of neutron detection devices and the plurality of discrete neutron moderating elements disposed along a common axis, a control system configured to generate a detector response library, wherein the detector response library includes one or more sets of data indicative of a response of the detector to a known neutron source, receive one or more measured neutron response signals from each of the neutron devices, the one or more measured response signals response to a detected neutron event, and determine one or more characteristics of neutrons emanating from a measured neutron source by comparing the one or more measured neutron response signals to the detector response library.

Abstract: Amorphous semiconductor films with enhanced charged carrier transport are disclosed. Also disclosed is a method for fabricating and treating the film to produce the enhanced transport. Also disclosed are semiconductor p-n junctions fabricated with the films which demonstrate the enhanced transport. The films are amorphous and include boron, carbon, and hydrogen.

Abstract: Amorphous semiconductor films with enhanced charged carrier transport are disclosed. Also disclosed is a method for fabricating and treating the film to produce the enhanced transport. Also disclosed are semiconductor p-n junctions fabricated with the films which demonstrate the enhanced transport. The films are amorphous and include boron, carbon, and hydrogen.

Abstract: Thermal treatment of transition metal ferrite nanoparticles at moderate temperatures provides materials with desirable magnetic properties. AxFe3-xO4 nanoparticles, e.g., with metal ratio from x=0.4 to 1.0, can be prepared according to standard solution micelle techniques. While the materials produced by micelle synthesis, such as CoFe2O4 nanoparticles, appeared to be comprised of mainly the magnetite phase (e.g., CoFe2O4) by x-ray diffraction, multiphase materials were observed after the transition metal ferrite nanoparticles were subjected to thermal treatment under nitrogen. Magnetization as a function of applied field and temperature reveal variations in saturation magnetization, coercivity, blocking temperature and Verwey transition temperature dependence as a function of composition. Extremely high saturation magnetization with low coercivity can be achieved with such compositions.

Abstract: Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha particles, neutrons, or photons.

Abstract: A non-doped n-type boron carbide semiconductor polytype and a method of fabricating the same is provided. The n-type boron carbide polytype may be used in a device for detecting neutrons, electric power conversion, and pulse counting. Such a device may include an n-type boron carbide layer coupled with a substrate where the boron carbide may be an electrically active part of the device. This n-type boron carbide layer may be fabricated through the use of closo-1,7-dicarbadodecaborane (metacarborane). Specifically, the non-doped n-type polytype may be fabricated using SR-CVD by placing the substrate in a vacuum chamber, cooling the substrate, introducing metacarborane into the chamber, adsorbing the metacarborane onto the surface of the substrate through the use of incident X-ray radiation or electron beam irradiation, decomposing the adsorbed metacarborane, and allowing the substrate to reach ambient temperature. The n-type polytype of the present invention may also be fabricated by PECVD.

Abstract: A non-doped n-type boron carbide semiconductor polytype and a method of fabricating the same is provided. The n-type boron carbide polytype may be used in a device for detecting neutrons, electric power conversion, and pulse counting. Such a device may include an n-type boron carbide layer coupled with a substrate where the boron carbide may be an electrically active part of the device. This n-type boron carbide layer may be fabricated through the use of closo-1,7-dicarbadodecaborane (metacarborane). Specifically, the non-doped n-type polytype may be fabricated using SR-CVD by placing the substrate in a vacuum chamber, cooling the substrate, introducing metacarborane into the chamber, adsorbing the metacarborane onto the surface of the substrate through the use of incident X-ray radiation or electron beam irradiation, decomposing the adsorbed metacarborane, and allowing the substrate to reach ambient temperature. The n-type polytype of the present invention may also be fabricated by PECVD.