Patents by Inventor Anthony P. Holden
Anthony P. Holden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11795338Abstract: An example of a build material composition for three-dimensional (3D) printing includes a polymeric or polymeric composite build material and a wetting modifying agent. The wetting modifying agent is: (i) incorporated into the polymeric component of the polymeric or polymeric composite build material and changes the wetting behavior of the polymeric component; or (ii) selected from the group consisting of: a fluorotelomer; a C8-C20 alcohol; a methyltrialkyl ammonium chloride; docusate sodium salt; a polymer having a chemical structure of the polymeric component of the polymeric or polymeric composite build material modified to include a hydrophobic group or a hydrophilic group; and a combination thereof.Type: GrantFiled: January 26, 2018Date of Patent: October 24, 2023Assignee: Hewlett-Packard Development Company, L.P.Inventors: Sterling Chaffins, Anthony P. Holden, Katrina Donovan, Garry Hinch
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Patent number: 11642842Abstract: In an example of a method for three-dimensional (3D) printing, a build material composition is applied to form a build material layer. The build material composition includes a polymeric or polymeric composite build material, and a precipitating agent. Based on a 3D object model, a fusing agent is selectively applied on at least a portion of the build material composition. The fusing agent includes a radiation absorber, which the precipitating agent precipitates. The build material composition is exposed to radiation to fuse the at least the portion to form a layer of a 3D part.Type: GrantFiled: January 26, 2018Date of Patent: May 9, 2023Assignee: Hewlett-Packard Development Company, L.P.Inventors: Sterling Chaffins, Anthony P. Holden, Katrina Donovan, Noemie Midrez, Garry Hinch
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Patent number: 11426932Abstract: In an example of a method for reducing oxidation of a build material during three-dimensional printing, a portion of a layer of a polymeric build material is patterned by selectively applying a fusing agent on the portion. A detailing agent selectively applied on a non-patterned portion of the layer. The detailing agent includes a stabilizer to reduce oxidation of the polymeric build material. The layer is exposed to electromagnetic radiation to fuse the portion to form a 3D object layer. The stabilizer at least minimizes discoloration of the non-patterned portion.Type: GrantFiled: May 15, 2018Date of Patent: August 30, 2022Assignee: Hewlett-Packard Development Company, L.P.Inventors: Sterling Chaffins, Anthony P. Holden
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Publication number: 20210197456Abstract: In an example of a method for reducing oxidation of a build material during three-dimensional printing, a portion of a layer of a polymeric build material is patterned by selectively applying a fusing agent on the portion. A detailing agent selectively applied on a non-patterned portion of the layer. The detailing agent includes a stabilizer to reduce oxidation of the polymeric build material. The layer is exposed to electromagnetic radiation to fuse the portion to form a 3D object layer. The stabilizer at least minimizes discoloration of the non-patterned portion.Type: ApplicationFiled: May 15, 2018Publication date: July 1, 2021Applicant: Hewlett-Packard Development Company, L.P.Inventors: Sterling Chaffins, Anthony P. Holden
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Publication number: 20210107216Abstract: In an example of a method for three-dimensional (3D) printing, a build material composition is applied to form a build material layer. The build material composition includes a polymeric or polymeric composite build material, and a precipitating agent. Based on a 3D object model, a fusing agent is selectively applied on at least a portion of the build material composition. The fusing agent includes a radiation absorber, which the precipitating agent precipitates. The build material composition is exposed to radiation to fuse the at least the portion to form a layer of a 3D part.Type: ApplicationFiled: January 26, 2018Publication date: April 15, 2021Inventors: Sterling Chaffins, Anthony P. Holden, Katrina Donovan, Noemie Midrez, Garry Hinch
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Publication number: 20210087418Abstract: An example of a build material composition for three-dimensional (3D) printing includes a polymeric or polymeric composite build material and a wetting modifying agent. The wetting modifying agent is: (i) incorporated into the polymeric component of the polymeric or polymeric composite build material and changes the wetting behavior of the polymeric component; or (ii) selected from the group consisting of: a fluorotelomer; a C8-C20 alcohol; a methyltrialkyl ammonium chloride; docusate sodium salt; a polymer having a chemical structure of the polymeric component of the polymeric or polymeric composite build material modified to include a hydrophobic group or a hydrophilic group; and a combination thereof.Type: ApplicationFiled: January 26, 2018Publication date: March 25, 2021Inventors: Sterling Chaffins, Anthony P. Holden, Katrina Donovan, Garry Hinch
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Patent number: 7057249Abstract: A memory device includes a first surface having memory chips disposed thereon, the memory chips defining an exterior face of the memory device, and a second surface opposite the exterior face. A magnetically permeable shield layer extends over at least one of the exterior face and the second surface of the memory device.Type: GrantFiled: July 2, 2003Date of Patent: June 6, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Thomas C. Anthony, Colin A. Stobbs, Manoj K. Bhattaharyya, Anthony P. Holden, Judy Bloomquist, legal representative, Darrel R. Bloomquist, deceased
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Patent number: 6985381Abstract: A method for reading the magnetization orientation of a memory cell includes applying a magnetic field to the memory cell, observing any change in resistance of the memory cell as the magnetic field is applied, and determining the magnetization orientation based upon the observed change in resistance of the memory cell.Type: GrantFiled: October 15, 2003Date of Patent: January 10, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Manoi K. Bhattacharyya, Thomas C. Anthony, Anthony P. Holden
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Patent number: 6912892Abstract: An atomic force microscope for examining a sample is described. The atomic force microscope includes a probe assembly that includes a first tip and a second tip each directed towards a surface of a sample. The AFM further includes a source for applying a potential across the first tip and the second tip; at least one mechanism operable to cause relative motion between the surface and the probe; and at least one sensor operable to sense current flowing between the first tip and the second tip.Type: GrantFiled: April 30, 2002Date of Patent: July 5, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Darin D. Lindig, Anthony P. Holden
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Patent number: 6754123Abstract: A sensing circuit for determining the logic state of each memory cell in a resistive memory array, wherein each memory cell in the resistive memory array has current control isolation and the logic state of each memory cell can be determined relative to a reference cell having a pre-selected logic state. The sensing circuit comprises a memory cell sensing circuit to determine a bias voltage of a memory cell, a reference cell sensing circuit to determine a bias voltage of a reference cell, an isolation circuit to apply an isolation voltage to turn off a current control element associated with each unselected memory cell, an adjusting circuit to make the bias voltage on the memory cell approximately equal to the bias voltage on the reference cell, and a state determining circuit for determining the logic state of the memory cell.Type: GrantFiled: October 1, 2002Date of Patent: June 22, 2004Assignee: Hewlett-Packard Development Company, LP.Inventors: Frederick A. Perner, Anthony P. Holden
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Patent number: 6717874Abstract: Systems and methods for reducing the effect of noise while reading data in series from memory, are provided. One system embodiment comprises a memory cell that stores a first data; a sensing device that receives the first data multiple times and provides a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment comprises reading data in series that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.Type: GrantFiled: August 14, 2002Date of Patent: April 6, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Frederick A. Perner, David H. McIntyre, Jonathan Jedwab, Anthony P. Holden
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Publication number: 20040062117Abstract: An adjustable current mode differential sense amplifier is provided. The amplifier is disposed to be in communication with a selected memory cell and a reference cell having a predetermined value. The amplifier is able to sense current and voltage changes associated with the selected memory cell and compare them to current and voltage changes associated with the reference cell. The operating point of the sensing amplifier may be changed by modifying threshold voltages related to the back gate bias applied to selected transistors in the amplifier. This adjusting capability enables currents or voltages of the sense amplifier to be set when a first bias voltage is applied to a selected memory cell in order to maximize the sensitivity of the amplifier.Type: ApplicationFiled: October 1, 2002Publication date: April 1, 2004Inventors: Frederick A. Perner, Anthony P. Holden
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Patent number: 6674679Abstract: An adjustable current mode differential sense amplifier is disposed to be in communication with a selected memory cell and a reference cell having a predetermined value. The amplifier is able to sense current and voltage changes associated with the selected memory cell and compare them to current and voltage changes associated with the reference cell. The operating point of the sensing amplifier may be changed by modifying threshold voltages related to the back gate bias applied to selected transistors in the amplifier. This adjusting capability enables currents or voltages of the sense amplifier to be set when a first bias voltage is applied to a selected memory cell in order to maximize the sensitivity of the amplifier.Type: GrantFiled: October 1, 2002Date of Patent: January 6, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Frederick A. Perner, Anthony P. Holden
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Publication number: 20030200798Abstract: An atomic force microscope for examining a sample is described. The atomic force microscope includes a probe assembly that includes a first tip and a second tip each directed towards a surface of a sample. The AFM further includes a source for applying a potential across the first tip and the second tip; at least one mechanism operable to cause relative motion between the surface and the probe; and at least one sensor operable to sense current flowing between the first tip and the second tip.Type: ApplicationFiled: April 30, 2002Publication date: October 30, 2003Inventors: Darin D. Lindig, Anthony P. Holden