Patents by Inventor Anthony Quelen
Anthony Quelen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250260369Abstract: The present disclosure relates to a multipath amplifier method and circuit comprising a first and a second amplification path for an input voltage, coupled in parallel, the first path comprising a first amplifier stage, a second amplifier stage and a notch filter between a first node coupled to the second amplifier stage and a second node coupled to an output of the first amplifier stage, and a control unit configured, following detection of a change in common mode of the input voltage, for a first duration to open the first path and to couple the first node to the second node through a unity-gain amplifier.Type: ApplicationFiled: January 29, 2025Publication date: August 14, 2025Inventors: Anthony Quelen, Thierry Masson
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Publication number: 20250155913Abstract: A bandgap circuit includes: a first resistor receiving a voltage proportional to the temperature; a second resistor receiving a voltage complementary to absolute temperature; and a third resistor where the sum of the currents in the first and second resistors flows. Each of the second and third resistors comprises a fixed resistance part and N controllable resistance parts, with N greater than or equal to 2. Each controllable resistance part of the second resistor is associated with a corresponding controllable resistance part of the third resistor. A control circuit supplies, for each controllable resistance part, the same control signal to this controllable resistance part and its associated controllable resistance part.Type: ApplicationFiled: November 11, 2024Publication date: May 15, 2025Applicant: STMicroelectronics International N.V.Inventors: Thierry MASSON, Anthony QUELEN
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Patent number: 11940825Abstract: A voltage divider circuit includes at least two FDSOI transistors (TP1, TP2) of a first type connected to a first supply potential and arranged in a current mirror structure, two FDSOI transistors (TN1, TN2) of a second type and an electrical load (R), the drain of a first—respectively second—transistor (TN1) of the second type being connected to the drain of a first—respectively second—transistor (TP1) of the first type, the drain of the first transistor of the second type being connected to the front-face gate of this same transistor, the front-face gates of the first and second transistors of the second type being connected to one another, the source of the first transistor of the second type being connected to a second supply potential and the load being placed between the source of the second transistor of the second type and the second supply potential.Type: GrantFiled: December 4, 2020Date of Patent: March 26, 2024Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Anthony Quelen
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Patent number: 11476755Abstract: An interface electronic circuit between an energy harvesting stage is provided with an inductor and a charging stage, the interface electronic circuit having a regulation circuit capable of servo-controlling an average input impedance value of the interface electronic circuit to a predetermined optimum impedance value.Type: GrantFiled: December 2, 2020Date of Patent: October 18, 2022Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Anthony Quelen
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Publication number: 20210194359Abstract: An interface electronic circuit between an energy harvesting stage is provided with an inductor and a charging stage, the interface electronic circuit having a regulation circuit capable of servo-controlling an average input impedance value of the interface electronic circuit to a predetermined optimum impedance value.Type: ApplicationFiled: December 2, 2020Publication date: June 24, 2021Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Anthony QUELEN
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Publication number: 20210173421Abstract: A voltage divider circuit includes at least two FDSOI transistors (TP1, TP2) of a first type connected to a first supply potential and arranged in a current mirror structure, two FDSOI transistors (TN1, TN2) of a second type and an electrical load (R), the drain of a first—respectively second—transistor (TN1) of the second type being connected to the drain of a first—respectively second—transistor (TP1) of the first type, the drain of the first transistor of the second type being connected to the front-face gate of this same transistor, the front-face gates of the first and second transistors of the second type being connected to one another, the source of the first transistor of the second type being connected to a second supply potential and the load being placed between the source of the second transistor of the second type and the second supply potential.Type: ApplicationFiled: December 4, 2020Publication date: June 10, 2021Inventor: Anthony QUELEN
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Patent number: 10418977Abstract: A transistor biasing circuit including a first controller configured to receive a sensor signal generated based on the performance of one or more transistors of a digital circuit and to compare the sensor signal with a reference signal and to generate a first biasing voltage control signal; a first actuator configured to generate a first biasing voltage based on the first biasing voltage control signal; a second actuator configured to generate a second biasing voltage based on a second biasing voltage control signal; and a second controller configured to generate the second biasing voltage control signal based on an intermediate voltage level generated based on the first and second biasing voltages.Type: GrantFiled: December 18, 2018Date of Patent: September 17, 2019Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventor: Anthony Quelen
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Publication number: 20190190500Abstract: A transistor biasing circuit including a first controller configured to receive a sensor signal generated based on the performance of one or more transistors of a digital circuit and to compare the sensor signal with a reference signal and to generate a first biasing voltage control signal; a first actuator configured to generate a first biasing voltage based on the first biasing voltage control signal; a second actuator configured to generate a second biasing voltage based on a second biasing voltage control signal; and a second controller configured to generate the second biasing voltage control signal based on an intermediate voltage level generated based on the first and second biasing voltages.Type: ApplicationFiled: December 18, 2018Publication date: June 20, 2019Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventor: Anthony Quelen
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Patent number: 10127953Abstract: A voltage selection circuit, including: first and second nodes of application of first and second input voltages; a third output voltage supply node; first and second MOS transistors respectively coupling the first and third nodes and the second and third nodes; and a control circuit capable of keeping the first and second transistors either respectively on and off or respectively off and on, the control circuit including a feedback loop from the third node to the gate of the first transistor and being capable, during a transition phase, of controlling the first transistor in linear operating region to apply a DC voltage ramp to the third node.Type: GrantFiled: June 20, 2017Date of Patent: November 13, 2018Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventor: Anthony Quelen
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Patent number: 10037047Abstract: An FDSOI reference voltage generation circuit, including a CTAT current generation circuit; a PTAT-type voltage generation circuit including a first branch including first and second series-connected transistors, the front surface gates of the first and second transistors being connected to the conduction node of the second transistor opposite to the first transistor; a third diode-assembled transistor having a conduction node connected to an output node of the PTAT voltage generation circuit and having its other conduction node forming a reference voltage supply node; and a current mirror; wherein the first and second transistors are of LVT type and the third transistor is of RVT type.Type: GrantFiled: November 30, 2016Date of Patent: July 31, 2018Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventor: Anthony Quelen
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Publication number: 20180012635Abstract: A voltage selection circuit, including: first and second nodes of application of first and second input voltages; a third output voltage supply node; first and second MOS transistors respectively coupling the first and third nodes and the second and third nodes; and a control circuit capable of keeping the first and second transistors either respectively on and off or respectively off and on, the control circuit including a feedback loop from the third node to the gate of the first transistor and being capable, during a transition phase, of controlling the first transistor in linear operating region to apply a DC voltage ramp to the third node.Type: ApplicationFiled: June 20, 2017Publication date: January 11, 2018Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventor: Anthony Quelen
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Publication number: 20170153659Abstract: An FDSOI reference voltage generation circuit, including a CTAT current generation circuit; a PTAT-type voltage generation circuit including a first branch including first and second series-connected transistors, the front surface gates of the first and second transistors being connected to the conduction node of the second transistor opposite to the first transistor; a third diode-assembled transistor having a conduction node connected to an output node of the PTAT voltage generation circuit and having its other conduction node forming a reference voltage supply node; and a current mirror; wherein the first and second transistors are of LVT type and the third transistor is of RVT type.Type: ApplicationFiled: November 30, 2016Publication date: June 1, 2017Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventor: Anthony Quelen
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Publication number: 20040070456Abstract: An audio amplifier system (10) is formed to include a voltage reference (16). The voltage reference (16) is formed to utilize a filter having a first cut-off frequency when the output (14) of the voltage reference (16) is less than a first value and to use a second cut-off frequency when the output (14) is greater than the first value.Type: ApplicationFiled: October 15, 2002Publication date: April 15, 2004Applicant: Semiconductor Components Industries, LLCInventors: Patrick Bernard, Anthony Quelen, Christian Perrin
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Patent number: 6717473Abstract: An audio amplifier system (10) is formed to include a voltage reference (16). The voltage reference (16) is formed to utilize a filter having a first cut-off frequency when the output (14) of the voltage reference (16) is less than a first value and to use a second cut-off frequency when the output (14) is greater than the first value.Type: GrantFiled: October 15, 2002Date of Patent: April 6, 2004Assignee: Semiconductor Components Industries, L.L.C.Inventors: Patrick Bernard, Anthony Quelen, Christian Perrin