Patents by Inventor Anthony Renau

Anthony Renau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190181144
    Abstract: A memory device may include an active device region, disposed at least partially in a first level. The memory device may include a storage capacitor, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane. The memory device may also include a contact via, the contact via extending between the storage capacitor and the active device region, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane.
    Type: Application
    Filed: December 12, 2017
    Publication date: June 13, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Sony Varghese, Anthony Renau, Morgan Evans, John Hautala, Joe Olson
  • Patent number: 10290462
    Abstract: An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: May 14, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Alexandre Likhanskii, Svetlana B. Radovanov, Anthony Renau
  • Publication number: 20190056914
    Abstract: A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.
    Type: Application
    Filed: October 18, 2017
    Publication date: February 21, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Tristan Y. Ma, Huixiong Dai, Anthony Renau, John Hautala, Joseph Olson
  • Publication number: 20180166250
    Abstract: An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.
    Type: Application
    Filed: February 9, 2018
    Publication date: June 14, 2018
    Inventors: Bon-Woong Koo, Alexandre Likhanskii, Svetlana B. Radovanov, Anthony Renau
  • Publication number: 20180082824
    Abstract: A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.
    Type: Application
    Filed: September 19, 2016
    Publication date: March 22, 2018
    Inventors: Alexandre Likhanskii, Maureen Petterson, John Hautala, Anthony Renau, Christopher A. Rowland, Costel Biloiu
  • Patent number: 9922795
    Abstract: An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: March 20, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Alexandre Likhanskii, Svetlana B. Radovanov, Anthony Renau
  • Patent number: 9847228
    Abstract: A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: December 19, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Simon Ruffell, Thomas R. Omstead, Anthony Renau
  • Patent number: 9773636
    Abstract: An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive H2 gas; a light source directing radiation into the ion source chamber to generate excited H2 molecules having an excited vibrational state from at least some of the H2 gas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H? ions are generated from at least some of the excited H2 molecules; and an extraction assembly arranged to extract the H? ions from the ion source chamber.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: September 26, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: W. Davis Lee, Neil Bassom, Anthony Renau
  • Patent number: 9620335
    Abstract: A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: April 11, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Costel Biloiu, Nini Munoz, Ludovic Godet, Anthony Renau
  • Publication number: 20170053776
    Abstract: An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive H2 gas; a light source directing radiation into the ion source chamber to generate excited H2 molecules having an excited vibrational state from at least some of the H2 gas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H? ions are generated from at least some of the excited H2 molecules; and an extraction assembly arranged to extract the H? ions from the ion source chamber.
    Type: Application
    Filed: August 20, 2015
    Publication date: February 23, 2017
    Inventors: W. Davis Lee, Neil Bassom, Anthony Renau
  • Publication number: 20170032927
    Abstract: An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.
    Type: Application
    Filed: July 27, 2015
    Publication date: February 2, 2017
    Inventors: Bon-Woong Koo, Alexandre Likhanskii, Svetlana B. Radovanov, Anthony Renau
  • Publication number: 20160379827
    Abstract: A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.
    Type: Application
    Filed: September 9, 2016
    Publication date: December 29, 2016
    Inventors: Simon Ruffell, Thomas R. Omstead, Anthony Renau
  • Patent number: 9520360
    Abstract: A method for fabricating a multilayer structure includes providing a mask on a device stack disposed on the substrate, the device stack comprising a first plurality of layers composed of a first layer type and a second layer type; directing first ions along a first direction forming a first non-zero angle of incidence with respect to a normal to a plane of the substrate, wherein a first sidewall is formed having a sidewall angle forming a first non-zero angle of inclination with respect to the normal, the first sidewall comprising a second plurality of layers from at least a portion of the first plurality of layers and composed of the first layer type and second layer type; and etching the second plurality of layers using a first selective etch wherein the first layer type is selectively etched with respect to the second layer type.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: December 13, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Christopher Hatem
  • Publication number: 20160326636
    Abstract: Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.
    Type: Application
    Filed: July 20, 2016
    Publication date: November 10, 2016
    Inventors: Ludovic Godet, Christopher Hatem, Deepak Ramappa, Xianfeng Lu, Anthony Renau, Patrick Martin
  • Patent number: 9455335
    Abstract: A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor material and forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed portion of the fin structure defines a channel region. The method further includes performing at least one implant into the exposed portion of the fin structure.
    Type: Grant
    Filed: November 14, 2013
    Date of Patent: September 27, 2016
    Assignee: Varian Semiconductor Equiment Associates, Inc
    Inventors: Anthony Renau, Hans-Joachim L. Gossmann
  • Patent number: 9453279
    Abstract: A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: September 27, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Simon Ruffell, Thomas R. Omstead, Anthony Renau
  • Patent number: 9425027
    Abstract: Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: August 23, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Christopher Hatem, Deepak Ramappa, Xianfeng Lu, Anthony Renau, Patrick Martin
  • Publication number: 20160233162
    Abstract: A method for fabricating a multilayer structure includes providing a mask on a device stack disposed on the substrate, the device stack comprising a first plurality of layers composed of a first layer type and a second layer type; directing first ions along a first direction forming a first non-zero angle of incidence with respect to a normal to a plane of the substrate, wherein a first sidewall is formed having a sidewall angle forming a first non-zero angle of inclination with respect to the normal, the first sidewall comprising a second plurality of layers from at least a portion of the first plurality of layers and composed of the first layer type and second layer type; and etching the second plurality of layers using a first selective etch wherein the first layer type is selectively etched with respect to the second layer type.
    Type: Application
    Filed: April 18, 2016
    Publication date: August 11, 2016
    Inventors: Anthony Renau, Christopher Hatem
  • Publication number: 20160189935
    Abstract: A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.
    Type: Application
    Filed: March 9, 2016
    Publication date: June 30, 2016
    Inventors: Costel Biloiu, Nini Munoz, Ludovic Godet, Anthony Renau
  • Patent number: 9337040
    Abstract: A method for fabricating a multilayer structure includes providing a mask on a device stack disposed on the substrate, the device stack comprising a first plurality of layers composed of a first layer type and a second layer type; directing first ions along a first direction forming a first non-zero angle of incidence with respect to a normal to a plane of the substrate, wherein a first sidewall is formed having a sidewall angle forming a first non-zero angle of inclination with respect to the normal, the first sidewall comprising a second plurality of layers from at least a portion of the first plurality of layers and composed of the first layer type and second layer type; and etching the second plurality of layers using a first selective etch wherein the first layer type is selectively etched with respect to the second layer type.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: May 10, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Christopher Hatem