Patents by Inventor Anthony Ricci
Anthony Ricci has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11289306Abstract: The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support during particular processing steps. The cooled substrate support may have beneficial impacts in terms of reducing the degree of diffusion-related damage in a resulting device. Further, the use of a non-cooled substrate support during certain other processing steps can likewise have beneficial impacts in terms of reducing diffusion-related damage, depending on the particular step. In some implementations, the cooled substrate support may be used in a process to preferentially deposit a material (in some cases a reactant) on certain portions of the substrate.Type: GrantFiled: August 21, 2017Date of Patent: March 29, 2022Assignee: Lam Research CorporationInventors: Thorsten Lill, Ivan L. Berry, III, Anthony Ricci
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Patent number: 10892197Abstract: A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber includes a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate. An edge seal including a compressible ring is mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate. At least one gas passage is in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove. The at least gas one passage extends through the base plate and includes a plurality of outlets in fluid communication with the annular space. In some examples, a backing seal may be located between the edge seal and an inner wall of the mounting groove.Type: GrantFiled: August 29, 2018Date of Patent: January 12, 2021Assignee: LAM RESEARCH CORPORATIONInventors: Keith William Gaff, Matthew Busche, Anthony Ricci, Henry S. Povolny, Scott Stevenot
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Patent number: 10879053Abstract: A baseplate for a temperature controlled substrate support assembly in a vacuum chamber includes a single cavity in an upper surface of the base plate. A cylindrical wall extends upward around an outer perimeter of the base plate to define the cavity. A cover plate arranged on the base plate above the cavity is in thermal contact with the cylindrical wall of the base plate. A plurality of thermoelectric modules is arranged within the cavity in the upper surface of the base plate in thermal contact with the cover plate and the base plate and is sealed from the vacuum chamber and maintained at atmospheric pressure. A plurality of fluid channels is arranged within the base plate below the cavity. A plurality of heat transfer pipes extends downward toward the fluid channels from an upper surface of the base plate within the cavity.Type: GrantFiled: December 28, 2016Date of Patent: December 29, 2020Assignee: Lam Research CorporationInventors: Anthony Ricci, Henry Povolny
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Publication number: 20190024970Abstract: A beverage cooling apparatus for imparting coldness to beverage containers includes a base having a planar configuration and having a pair of side walls extending upwardly from ends of the base. The apparatus includes a guide member that includes first and second end portions and defining a plurality of apertures spaced apart from one another between the first and second end portions thereof that are configured to selectively receive and suspend the plurality of beverage containers, respectively. The first and second end portions of the guide member are coupled to upper ends of the side walls of the cooling member, respectively. The cooling member includes a temperature transfer material that transfers hot or cold heat energy to beverage containers suspended in apertures, respectively, such that they touch or are in proximity to the cooling member. The cooling member is separable from the guide member and re-frozen for later use.Type: ApplicationFiled: July 21, 2017Publication date: January 24, 2019Inventors: Franco Sapia, Anthony Ricci
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Publication number: 20180366379Abstract: A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber includes a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate. An edge seal including a compressible ring is mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate. At least one gas passage is in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove. The at least gas one passage extends through the base plate and includes a plurality of outlets in fluid communication with the annular space. In some examples, a backing seal may be located between the edge seal and an inner wall of the mounting groove.Type: ApplicationFiled: August 29, 2018Publication date: December 20, 2018Inventors: Keith William GAFF, Matthew BUSCHE, Anthony RICCI, Henry S. POVOLNY, Scott STEVENOT
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Patent number: 10090211Abstract: A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled base plate, an upper plate above the base plate, and an annular mounting groove surrounding a bond layer located between the base plate and the upper plate. The mounting groove includes an inner wall, an opening of the mounting groove faces radially outward relative to the inner wall, and the mounting groove includes a step extending downward from the upper plate on an upper wall of the groove or extending upward from the base plate on a lower wall of the groove. An edge seal including a compressible ring is mounted in the groove such that the compressible ring is compressed between the upper plate and the base plate to cause an outer surface of the compressible ring to be biased radially outward relative to the inner wall toward the step.Type: GrantFiled: December 26, 2013Date of Patent: October 2, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Keith William Gaff, Matthew Busche, Anthony Ricci, Henry S. Povolny, Scott Stevenot
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Publication number: 20170372911Abstract: The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support during particular processing steps. The cooled substrate support may have beneficial impacts in terms of reducing the degree of diffusion-related damage in a resulting device. Further, the use of a non-cooled substrate support during certain other processing steps can likewise have beneficial impacts in terms of reducing diffusion-related damage, depending on the particular step. In some implementations, the cooled substrate support may be used in a process to preferentially deposit a material (in some cases a reactant) on certain portions of the substrate. The disclosed embodiments may be used to achieve high quality anisotropic etching results.Type: ApplicationFiled: August 21, 2017Publication date: December 28, 2017Inventors: Thorsten Lill, Ivan L. Berry, III, Anthony Ricci
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Patent number: 9779955Abstract: The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support during particular processing steps. The cooled substrate support may have beneficial impacts in terms of reducing the degree of diffusion-related damage in a resulting device. Further, the use of a non-cooled substrate support during certain other processing steps can likewise have beneficial impacts in terms of reducing diffusion-related damage, depending on the particular step. In some implementations, the cooled substrate support may be used in a process to preferentially deposit a material (in some cases a reactant) on certain portions of the substrate. The disclosed embodiments may be used to achieve high quality anisotropic etching results.Type: GrantFiled: February 25, 2016Date of Patent: October 3, 2017Assignee: Lam Research CorporationInventors: Thorsten Lill, Ivan L. Berry, III, Anthony Ricci
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Publication number: 20170250087Abstract: The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support during particular processing steps. The cooled substrate support may have beneficial impacts in terms of reducing the degree of diffusion-related damage in a resulting device. Further, the use of a non-cooled substrate support during certain other processing steps can likewise have beneficial impacts in terms of reducing diffusion-related damage, depending on the particular step. In some implementations, the cooled substrate support may be used in a process to preferentially deposit a material (in some cases a reactant) on certain portions of the substrate. The disclosed embodiments may be used to achieve high quality anisotropic etching results.Type: ApplicationFiled: February 25, 2016Publication date: August 31, 2017Inventors: Thorsten Lill, Ivan L. Berry, III, Anthony Ricci
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Patent number: 9728429Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.Type: GrantFiled: July 27, 2010Date of Patent: August 8, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Anthony Ricci, Saurabh Ullal, Larry Martinez
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Publication number: 20170110298Abstract: A baseplate for a temperature controlled substrate support assembly in a vacuum chamber includes a single cavity in an upper surface of the base plate. A cylindrical wall extends upward around an outer perimeter of the base plate to define the cavity. A cover plate arranged on the base plate above the cavity is in thermal contact with the cylindrical wall of the base plate. A plurality of thermoelectric modules is arranged within the cavity in the upper surface of the base plate in thermal contact with the cover plate and the base plate and is sealed from the vacuum chamber and maintained at atmospheric pressure. A plurality of fluid channels is arranged within the base plate below the cavity. A plurality of heat transfer pipes extends downward toward the fluid channels from an upper surface of the base plate within the cavity.Type: ApplicationFiled: December 28, 2016Publication date: April 20, 2017Inventors: Anthony RICCI, Henry POVOLNY
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Publication number: 20150187614Abstract: A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising a ring compressed in the groove. A gas source supplies inert gas to the groove and maintains the inert gas at a pressure of 100 mTorr to 100 Torr in the groove.Type: ApplicationFiled: December 26, 2013Publication date: July 2, 2015Applicant: Lam Research CorporationInventors: Keith William Gaff, Matthew Busche, Anthony Ricci, Henry S. Povolny, Scott Stevenot
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Publication number: 20140356985Abstract: A temperature controlled substrate support assembly used for processing a substrate in a vacuum chamber of a semiconductor processing apparatus. The substrate support assembly comprises a top plate for supporting the substrate. A base plate is disposed below the top plate wherein the base plate comprises a cavity in an upper surface of the base plate. A cover plate is disposed between the top plate and the base plate. At least one thermoelectric module is in the cavity in the upper surface of the base plate wherein the at least one thermoelectric module is in thermal contact with the top plate and the base plate, and the at least one thermoelectric module is maintained at atmospheric pressure.Type: ApplicationFiled: June 3, 2013Publication date: December 4, 2014Applicant: Lam Research CorporationInventors: Anthony Ricci, Henry Povolny
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Patent number: 8587113Abstract: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, includes multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated has an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.Type: GrantFiled: June 7, 2013Date of Patent: November 19, 2013Assignee: Lam Research CorporationInventors: Keith William Gaff, Keith Comendant, Anthony Ricci
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Publication number: 20130269368Abstract: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, includes multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated has an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.Type: ApplicationFiled: June 7, 2013Publication date: October 17, 2013Inventors: Keith William GAFF, Keith Comendant, Anthony Ricci
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Patent number: 8461674Abstract: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.Type: GrantFiled: September 21, 2011Date of Patent: June 11, 2013Assignee: Lam Research CorporationInventors: Keith William Gaff, Keith Comendant, Anthony Ricci
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Patent number: 8410393Abstract: A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; a pre-cooling unit providing liquid at temperature Tpc connected to the inlet and the outlet, temperature Tpc being at least 10° C. below T1; a pre-heating unit providing liquid at temperature Tph connected to the inlet and the outlet, temperature Tph being at least 10° C.Type: GrantFiled: May 24, 2010Date of Patent: April 2, 2013Assignee: Lam Research CorporationInventors: Anthony Ricci, Saurabh Ullal, Michael Kang, Matthew Busche
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Publication number: 20130072035Abstract: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.Type: ApplicationFiled: September 21, 2011Publication date: March 21, 2013Applicant: Lam Research CorporationInventors: Keith William Gaff, Keith Comendant, Anthony Ricci
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Publication number: 20120024449Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.Type: ApplicationFiled: July 27, 2010Publication date: February 2, 2012Applicant: Lam Research CorporationInventors: Anthony Ricci, Saurabh Ullal, Larry Martinez
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Publication number: 20110284505Abstract: A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; a pre-cooling unit providing liquid at temperature Tpc connected to the inlet and the outlet, temperature Tpc being at least 10° C. below T1; a pre-heating unit providing liquid at temperature Tph connected to the inlet and the outlet, temperature Tph being at least 10° C.Type: ApplicationFiled: May 24, 2010Publication date: November 24, 2011Applicant: Lam Research CorporationInventors: Anthony Ricci, Saurabh Ullal, Michael Kang, Matthew Busche