Patents by Inventor Anthony S. Arrott

Anthony S. Arrott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pulsed write techniques for magneto-resistive memories
    Patent number: 7038940
    Abstract: A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
    Type: Grant
    Filed: January 7, 2005
    Date of Patent: May 2, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Richard W. Swanson, William J. Johnson, Theodore Zhu, Anthony S. Arrott
  • Methods of increasing write selectivity in an MRAM
    Patent number: 6992918
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Grant
    Filed: July 7, 2003
    Date of Patent: January 31, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • Pulsed write techniques for magneto-resistive memories
    Patent number: 6850431
    Abstract: A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
    Type: Grant
    Filed: March 26, 2004
    Date of Patent: February 1, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Richard W. Swanson, William J. Johnson, Theodore Zhu, Anthony S. Arrott
  • Pulsed write techniques for magneto-resistive memories
    Publication number: 20040184314
    Abstract: A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
    Type: Application
    Filed: March 26, 2004
    Publication date: September 23, 2004
    Applicant: Micron Technology, Inc.
    Inventors: Richard W. Swanson, William J. Johnson, Theodore Zhu, Anthony S. Arrott
  • Methods of increasing write selectivity in an MRAM
    Patent number: 6791856
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: September 14, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • Methods of increasing write selectivity in an MRAM
    Patent number: 6756240
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Grant
    Filed: July 7, 2003
    Date of Patent: June 29, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • METHODS OF INCREASING WRITE SELECTIVITY IN AN MRAM
    Publication number: 20040082082
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Application
    Filed: July 7, 2003
    Publication date: April 29, 2004
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • Pulsed write techniques for magneto-resistive memories
    Patent number: 6724654
    Abstract: A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
    Type: Grant
    Filed: February 13, 2003
    Date of Patent: April 20, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Richard W. Swanson, William J. Johnson, Theodore Zhu, Anthony S. Arrott
  • Methods of increasing write selectivity in an MRAM
    Publication number: 20040004878
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Application
    Filed: July 7, 2003
    Publication date: January 8, 2004
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • Methods of increasing write selectivity in an MRAM
    Publication number: 20030086321
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Application
    Filed: December 20, 2002
    Publication date: May 8, 2003
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • MRAM architectures for increased write selectivity
    Patent number: 6522574
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Grant
    Filed: September 25, 2001
    Date of Patent: February 18, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • Pulse write techniques for magneto-resistive memories
    Patent number: 6493259
    Abstract: A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
    Type: Grant
    Filed: August 14, 2000
    Date of Patent: December 10, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Richard W. Swanson, William J. Johnson, Theodore Zhu, Anthony S. Arrott
  • MRAM architectures for increased write selectivity
    Patent number: 6424564
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Grant
    Filed: September 26, 2001
    Date of Patent: July 23, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • MRAM architecture using offset bits for increased write selectivity
    Patent number: 6424561
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Grant
    Filed: July 18, 2000
    Date of Patent: July 23, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • MRAM architectures for increased write selectivity
    Publication number: 20020012269
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Application
    Filed: September 25, 2001
    Publication date: January 31, 2002
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu
  • MRAM architectures for increased write selectivity
    Publication number: 20020012268
    Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
    Type: Application
    Filed: September 26, 2001
    Publication date: January 31, 2002
    Inventors: Shaoping Li, Theodore Zhu, Anthony S. Arrott, Harry Liu, William L. Larson, Yong Lu