Abstract: Systems and methods for assembling a structure onto a substrate include an array of programmable magnets disposed beneath a substrate, wherein a magnetic field is applied to the structure to levitate the structure above the substrate while the structure is moved relative to the substrate to align the structure with a corresponding recess formed in the substrate. A magnetic field may be applied to translate and rotate the structure relative to the substrate. Differences between or among the programmable magnets regarding magnetic polarity, energized versus de-energized status, and magnetic field strength may be used to move the structure relative to the substrate in conjunction with a closed-loop control system. A bonded substrate assembly and a method of bonding a first wafer to a second wafer include wherein the first wafer includes a projection and the second wafer includes a matching depression.

Abstract: Systems and methods for assembling a structure onto a substrate include an array of programmable magnets disposed beneath a substrate, wherein a magnetic field is applied to the structure to levitate the structure above the substrate while the structure is moved relative to the substrate to align the structure with a corresponding recess formed in the substrate. A magnetic field may be applied to translate and rotate the structure relative to the substrate. Differences between or among the programmable magnets regarding magnetic polarity, energized versus de-energized status, and magnetic field strength may be used to move the structure relative to the substrate in conjunction with a closed-loop control system. A bonded substrate assembly and a method of bonding a first wafer to a second wafer include wherein the first wafer includes a projection and the second wafer includes a matching depression.

Abstract: A method for assembling and integrating microstructures (pills) onto a substrate. A plurality of patterned recesses are formed on the substrates, the recesses having transverse cross-sections and openings of specific shapes. A hard magnetic layer is deposited at the bottom of each said recess. A guide is positioned over the substrate, the guide having patterned hole shapes matching the shapes of the openings to the patterned recesses with which the holes mate. A collection of the pills is placed atop the guide. The said collection includes members with cross-sections matching the shapes of the openings to the recesses, and each pill is coated at one end with a soft magnetic layer. A moving magnetic field is applied to the collection of pills to agitate the pills, and effect a magnetic attraction between the layers at the ends of the pills and the soft magnetic layer at the bottom of the recesses.

Abstract: In an apparatus and process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first probe, collecting radiation propagating away from the wafer and radiation from the lamps in a second probe, and detecting radiation collected in the respective probes. This procedure further involves deconvolving the multiphase ac component of the signal received from each probe, determining the linear functional relationship of the first probe signal as a function of the second probe signal resulting from time-variations of the energizing current, and using this linear functional relationship along with the signal data according to a mathematical expression to infer the temperature.

Abstract: In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe, and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitudes according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface.

Abstract: In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitude according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface.

Abstract: A method of forming a superconductive metal oxide film on a substrate is disclosed. The method comprises depositing a metal layer on the substrate and heat treating the metal layer in an oxygen-containing atmosphere such that the oxide film is formed therefrom. The metal layer is deposited such that it is substantially free of reactive constituents, e.g., oxygen and/or fluorine, and such that it contains all the metal constitutents that are to be contained in the oxide film. Advantageously, the metal layer is deposited such that the various metal constituents (e.g., Y, Ba, and Cu) are substantially mixed. The inventive method simplifies deposition control since the densities of the metal deposits are well known and constant, and permits relatively rapid deposition (e.g., by DC sputtering) since the targets are not subject to oxidation.

Abstract: A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.

Abstract: A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described.