Abstract: The metal contact to the source and body regions in a vertical planar DMOSFET is formed by fabricating a sidewall spacer on the gate of the MOSFET. With the metal contact self-aligned to the gate in this way, the lateral dimension of each of the cells in the DMOSFET can be significantly reduced without the risk of a short between the contact and the gate, and the packing density of the cells can be increased. In this way, significant reductions in the on-resistance of the device can be achieved.

Abstract: A release mechanism for use with vacuum cleaning appliances having a pipe and hose arrangement, where the pipe is slidably mounted inside the hose. The release mechanism comprises an inner sleeve, an outer sleeve and actuating buttons. The inner sleeve couples the pipe to the hose. By using the actuating buttons, the inner sleeve is operational in a closed position and an open position. In the closed position, the pipe can slide inside the hose, but it cannot be removed or detached from the hose. In the open position, the pipe can be removed or detached from the hose. The outer sleeve secures the release mechanism to the hose and houses the inner sleeve and actuating buttons.