Abstract: A control system is disclosed for determining an actual temperature of a light emitting diode. The control system uses conductor that supply power to the light emitting diode to supply a pulse to the light emitting diode. The pulse is determined along with a reaction caused by the pulse and the information gained is used in determination of the light emitting diode die temperature which can then be used in controlling current to the light emitting diode to control the temperature of the light emitting diode.

Abstract: In various embodiments, an illumination device includes a housing, a power connector for connecting the illumination device to a power socket and receiving input power, a light emitter for direct illumination disposed within the housing, a circuit for regulating the input power and providing the regulated power to the light emitter, and a decorative illumination element for providing decorative illumination.

Abstract: Light sources with arrangements of multiple LEDs (or other light-emitting devices) disposed at or near the focus of a reflecting optic and controllable individually or in groups facilitate varying the angular distribution of the light beam (e.g., the beam divergence) via the drive currents supplied to the LEDs.

Abstract: A shoe hook spike to secure a tackless strip against a baseboard on a wall at a floor when installing carpet comprising an elongated flat shank. A component at a first end of the elongated flat shank is for receiving blows from a hammer. A structure at a second end of the elongated flat shank is for guiding the elongated flat shank under the baseboard on the wall. An element on the blow receiving component is for engaging with the tackless strip, to retain the tackless strip against the baseboard on the wall at the floor. An edge of the carpet can be held in place on the tackless strip.

Abstract: A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

Abstract: A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Abstract: A textured layer of tin oxide on a vitreous substrate in which the thickness and degree of texture of the layer can be controlled independently of one another. The tin oxide fabricated by a process comprising steps of depositing a first film of tin oxide on the substrate by chemical vapor deposition from a first reactant mixture of tin chloride, water, and an alcohol and depositing a second film of tin oxide on the first tin oxide film by chemical vapor deposition from a second reactant mixture of tin chloride and water. Where the substrate is ordinary soda lime glass, it preferably is first coated with a film of silicon dioxide. The process permits deposition of substantially uniform layers of tin oxide in a continuous deposition process.

Abstract: A photovoltaic cell that includes a transparent substrate, a front conductive layer formed on the substrate, a p-type layer formed on the front conductive layer, an i-layer of amorphous silicon formed on the p-layer, a wide bandgap n-type layer formed on the i-layer and a back contact layer formed on the n-type structure. The wide bandgap n-type layer may be an n-type sandwich structure which includes first, second, and third n-layers successively formed on one another. The first n-layer is formed on the i-layer, the second n-layer is formed on the first n-layer, and the n-layer is formed on the second n-layer. The second n-layer has an optical bandgap wider than the optical bandgap of the first and second n-type layers.

Abstract: A method of forming a textured layer of tin oxide on a vitreous substrate in which the thickness and degree of texture of the layer can be controlled independently of one another. The method comprises the steps of depositing a first film of tin oxide on the substrate by chemical vapor deposition from a first reactant mixture of tin chloride, water, and an alcohol and depositing a second film of tin oxide on the first tin oxide film by chemical vapor deposition from a second reactant mixture of tin chloride and water. Where the substrate is ordinary soda lime glass, it preferably is first coated with a film of silicon dioxide. The method permits deposition of substantially uniform layers of tin oxide in a continuous deposition process.

Abstract: Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.

Abstract: A photovoltaic device having an increased open circuit voltage includes a body of semiconductor material between layers of opposite conductivity type, one of which has a wide bandgap energy and through which light enters the device. The body includes a first region closest to the wide bandgap layer and a second region with the bandgap energy of the first region being greater than that of the second region and less than or equal to that of the wide bandgap layer.

Abstract: A method of fabricating electrically isolated photovoltaic modules arrayed on a substrate by forming overlying front contact strips, photovoltaic strips, and back contact strips on a flat transparent substrate, laser scribing between modules to electrically isolate adjacent modules for the simultaneous testing and electrical curing of the modules on a single substrate, and plasma etching the inter-module grooves formed by the laser isolation step to improve the percentage of modules on a single substrate that pass minimum performance criteria.Also disclosed is an array of electrically isolated, thin-film semiconductor devices fabricated on a single substrate, wherein adjacent semiconductor devices are separated by laser-scribed grooves extending through the devices to the substrate and the walls of the grooves have been etched by plasma etching.

Abstract: A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

Abstract: A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Abstract: A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.