Patents by Inventor Anthony Young Kim

Anthony Young Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV NANOPARTICLE SURFACES USING LEWIS ACID/LEWIS BASE INTERACTION
    Publication number: 20110092078
    Abstract: A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also includes exposing the set of boron atoms to a set of capping agents, each capping agent of the set of capping agents having a central atom and a set of functional groups, wherein the central atom includes at least a lone pair of electrons; wherein a complex is formed between at least some surface boron atoms of the set of surface boron atoms and the central atom of at least some capping agents of the set of capping agents.
    Type: Application
    Filed: December 21, 2010
    Publication date: April 21, 2011
    Inventors: Elena V. Rogojina, Maxim Kelman, Anthony Young Kim
  • SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV SURFACES USING LEWIS ACID/LEWIS BASE INTERACTION
    Publication number: 20090263977
    Abstract: A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also includes exposing the set of boron atoms to a set of capping agents, each capping agent of the set of capping agents having a central atom and a set of functional groups, wherein the central atom includes at least a lone pair of electrons; wherein a complex is formed between at least some surface boron atoms of the set of surface boron atoms and the central atom of at least some capping agents of the set of capping agents.
    Type: Application
    Filed: April 16, 2008
    Publication date: October 22, 2009
    Inventors: Elena V. Rogojina, Maxim Kelman, Anthony Young Kim