Abstract: Disclosed is a compound with the following formula (I): as well as the use thereof, in particular as a chelating agent of positively charged ions, or as a fluidizing agent for hydraulic compositions. Also disclosed is a hydraulic composition comprising a compound with formula (I), at least one hydraulic binder, at least one aggregate, and water.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed is use of a compound of formula (I) to determine the quantity of clay in a sand and/or to determine the amount of CMA compound to be added to a hydraulic binder composition using a sand: R1—(OA)n-XR2??(I) where: R1 is a linear or branched C1 to C4 alkyl groups, or a coloured compound; R2 is a coloured compound; A, each the same or different, are independently a —CH2—CH2— group or —CH(CH3)—CH2— group; n is an integer of between 1 and 500, preferably between 4 and 250; and X is O or NH.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: The invention relates to a food pressure cooking appliance including a bowl and a lid intended to be locked relative to the bowl to form with the latter a cooking chamber adapted to rise in pressure. The appliance includes bayonet locking means forming first and second series of protrusions that are integral with the envelope of the lid and the envelope of the bowl, respectively, and that are intended to cooperate with each other to ensure the locking of the lid relative to the bowl. Each protrusion of at least one of the series consists of a volume element that has opposite convex and concave faces and is formed by a localized radial deformation of the corresponding envelope.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)2(OR)2??Formula I, M(?O)(NR2)4??Formula II, M(?O)2(NR2)2??Formula III, M(?NR)2(OR)2??Formula IV, and M(?O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2 ??Formula I, M(=O)(NR2)4 ??Formula II, M(=O)2(NR2)2 ??Formula III, M(=NR)2(OR)2 ??Formula IV, and M(=O)(OR)4 ??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)2(OR)2 ??Formula I, M(?O)(NR2)4 ??Formula II, M(?O)2(NR2)2 ??Formula III, M(?NR)2(OR)2 ??Formula IV, and M(?O)(OR)4 ??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)(NR2)4 Formula I, M(=O)2(NR2)2 Formula II, and M(=NR)2(OR)2 Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)(NR2)4 Formula I, M(?O)2(NR2)2 Formula II, and M(?NR)2(OR)2 Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Electrochromic tungsten or molybdenum oxide and their doped derivative nanomaterials are prepared using sol-gel or vapor deposition methods from precursors containing only tungsten, oxygen, carbon and hydrogen, as other elements can generate optical defects impacting the electrochromic performances. Preferably, the liquid and volatile compound W(?O)(OsBu)4 is the precursor used.

Abstract: The invention relates to a food pressure cooking appliance including a bowl and a lid intended to be locked relative to the bowl to form with the latter a cooking chamber adapted to rise in pressure. The appliance also including bayonet locking means forming first and second series of protrusions that are integral with the envelope of the lid and the envelope of the bowl, respectively, and that are intended to cooperate with each other to ensure the locking of the lid relative to the bowl. Each protrusion of at least one of said series is consisted by a volume element that has opposite convex and concave faces, and that is formed by a localized radial deformation of the corresponding envelope.

Abstract: Precursors suitable for vapor deposition of layers in thin film transistors and electronic devices comprising such thin film transistors are disclosed.

Abstract: Precursors suitable for vapor deposition of layers in thin film transistors and electronic devices comprising such thin film transistors are disclosed.