Abstract: Circuits and methods of operation that can facilitate reducing surface losses for quantum devices are provided. In one example, a quantum device can comprise a dielectric layer, a first electrode, and a second electrode. The dielectric layer can comprise a recess formed in a surface of the dielectric layer that reduces a thickness of the dielectric layer from a first thickness external to a footprint of the recess to a second thickness within the footprint of the recess. The second thickness can be less than the first thickness. The first electrode can be positioned within the footprint of the recess. The second electrode can be electrically isolated from the first electrode by the dielectric layer. The first and second electrodes can be positioned on opposing surfaces of the dielectric layer.

Abstract: Circuits and methods of operation that can facilitate reducing surface losses for quantum devices are provided. In one example, a quantum device can comprise a dielectric layer, a first electrode, and a second electrode. The dielectric layer can comprise a recess formed in a surface of the dielectric layer that reduces a thickness of the dielectric layer from a first thickness external to a footprint of the recess to a second thickness within the footprint of the recess. The second thickness can be less than the first thickness. The first electrode can be positioned within the footprint of the recess. The second electrode can be electrically isolated from the first electrode by the dielectric layer. The first and second electrodes can be positioned on opposing surfaces of the dielectric layer.

Abstract: A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO2 composition.

Abstract: A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3% oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO2 composition.