Patents by Inventor Antoine Jalabert

Antoine Jalabert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7593251
    Abstract: The memory cell comprises a field effect memory transistor comprising a nanowire covered by a type of memory molecules and an access transistor of the same type. A source of the access transistor is connected to a drain of the memory transistor. The nanowire of the access transistor and the nanowire of the memory transistor can be formed by a single nanowire having two ends respectively forming a drain of the access transistor and a source of the memory transistor. The memory device comprises a plurality of memory cells, an access transistor gate being connected to a word line and a memory transistor gate being connected to a write line.
    Type: Grant
    Filed: May 15, 2007
    Date of Patent: September 22, 2009
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Antoine Jalabert
  • Publication number: 20080031034
    Abstract: The memory cell comprises a field effect memory transistor comprising a nanowire covered by a type of memory molecules and an access transistor of the same type. A source of the access transistor is connected to a drain of the memory transistor. The nanowire of the access transistor and the nanowire of the memory transistor can be formed by a single nanowire having two ends respectively forming a drain of the access transistor and a source of the memory transistor. The memory device comprises a plurality of memory cells, an access transistor gate being connected to a word line and a memory transistor gate being connected to a write line.
    Type: Application
    Filed: May 15, 2007
    Publication date: February 7, 2008
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventor: Antoine Jalabert