Abstract: Mass transfer tools and methods for high density transfer of arrays of micro devices are described. In an embodiment, a mass transfer tool includes a micro pick up array with an array of transfer heads arranged in clusters. The clusters of transfer heads can be used to pick up a high density group of micro devices followed by sequential placement onto a receiving substrate.

Abstract: Mass transfer tools and methods for high density transfer of arrays of micro devices are described. In an embodiment, a mass transfer tool includes a plurality of articulating transfer head assemblies coupled with a main translation track, where each articulating transfer head assembly is translatable along the main translation track between a donor substrate stage and a receiving substrate stage.

Abstract: Mass transfer tools and methods for high density transfer of arrays of micro devices are described. In an embodiment, a mass transfer tool includes a plurality of articulating transfer head assemblies coupled with a main translation track, where each articulating transfer head assembly is translatable along the main translation track between a donor substrate stage and a receiving substrate stage.

Abstract: Mass transfer tools and methods for high density transfer of arrays of micro devices are described. In an embodiment, a mass transfer tool includes a micro pick up array with an array of transfer heads arranged in clusters. The clusters of transfer heads can be used to pick up a high density group of micro devices followed by sequential placement onto a receiving substrate.

Abstract: Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

Abstract: Systems and methods for electrochemically processing a substrate. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.

Abstract: Systems and methods for electrochemically processing. In one embodiment, a plurality of grooves are formed in a polishing surface of a polishing pad. The grooves are adapted to facilitate the flow of polishing fluid over the polishing pad. Conductive layers are respectively formed in the grooves, wherein the conductive layers are in electrical communication with each other.

Abstract: Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.

Abstract: Embodiments of the present invention provide an apparatus for electrochemically processing a substrate. The apparatus comprises a processing layer having a surface adapted for processing a substrate thereon, a polishing head for retaining a substrate against the processing surface, a retaining ring a terminal adapted for coupling to a power source, and a plurality of independently biasable electrodes disposed below the processing layer.

Abstract: Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.

Abstract: A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The non-conductive portion contacts the substrate during polishing. The conductive portion is electrically biased during polishing to reduce the edge effect that tends to occur with conventional electrochemical mechanical processing systems.

Abstract: Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.

Abstract: The present invention relates to method and apparatus for determining removal rate and polishing endpoint of electropolishing process. One embodiment provides a method for determining an amount of material removed from a substrate. The method comprises providing a counter electrode and a conductive polishing article disposed over the counter electrode, contacting the substrate with the conductive polishing article so that the substrate is electrically connected to the conductive polishing article, distributing an electrolyte to the substrate and the counter electrode, and polishing one or more conductive materials on the substrate by applying a bias between the conductive polishing article and the counter electrode. The method further comprises determining a total charge removed from the substrate, and correlating the total charge removed and a thickness of material removed from the substrate.

Abstract: A carrier head and a method of cleaning the carrier head are disclosed. The carrier head may have one or more openings through a sidewall that extend into a cavity within the carrier head using a fluid passage. The openings may each have a lip. The lip may have a chamfered edge. Additionally, a fluid passage may slope generally downward from the openings to the cavity. The chamfered lips and the sloped fluid passage reduce back splashing and help ensure that sufficient rinsing fluid reaches the cavity to rinse polishing fluid and particles from the carrier head. The present invention relates to carrier heads for polishing or planarizing semiconductor substrates by chemical mechanical polishing (CMP) or electrochemical mechanical polishing (ECMP). The cavities in the carrier head are cleaned by rinsing fluid (i.e., liquid or gas) from inside the cavity towards a substrate receiving side of the carrier head.

Abstract: Systems and methods for electrochemically processing. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.

Abstract: A method and apparatus are provided for electroprocessing with recessed bias contact. In one embodiment, the apparatus includes a platen, a processing pad disposed on the platen and having at least a first aperture and a second aperture formed therethrough, a first electrode positioned under the processing pad and exposed to a polishing surface of the processing pad through the first aperture, wherein an upper surface of the first electrode is recessed from the polishing surface; a plurality of second electrodes exposed to the polishing surface through the second aperture, wherein upper surfaces of the second electrodes are recessed from the polishing surface, and an electrical circuit coupled to the first and second electrodes and configured to bias each of the second electrodes independently relative to the first electrode.

Abstract: Embodiments of the invention generally provide a method for electrochemically removing material from a substrate. In one embodiment, a method for electrochemically processing a substrate includes determining a process target for a substrate; electrochemically processing the substrate; determining a deviation between expected and actual process indicators while processing, and changing at least one process variable during processing in response to the variation.

Abstract: Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a contact assembly for electrochemically processing a substrate includes a housing having a ball disposed in a passage formed through the housing. The ball is adapted to extend partially from the housing to contact the substrate during processing. The housing comprises a conductive material. In another embodiment, the housing comprises a lower housing and a contact cover wherein the contact cover comprises a conductive material.

Abstract: Embodiments of the invention generally provide a method and apparatus for cleaning an electrical contact in an electrochemical mechanical planarizing apparatus. In one embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of draining electrolyte from the contact assembly and flowing a rinsing fluid into the contact assembly. In another embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof, flowing a rinsing fluid into the contact assembly and draining fluid flowing out of the contact assembly.

Abstract: A retaining ring for chemical mechanical polishing is described. The ring has a bottom surface with non-intersecting grooves. Alternating grooves are at opposing angles to one another.