Abstract: The disclosure relates to a method for etching a molybdenum feature, comprising the steps of: a) oxidizing a thickness portion of the molybdenum feature using a thermal oxidation process to form a thermal molybdenum oxide layer, and b) dissolving the thermal molybdenum oxide layer using a wet chemistry.

Abstract: This document describes a system and method for selectively switching the fast-wet-etching direction of crystalline silicon, c-Si, nanostructures between the (100) and the (110) crystallographic planes of c-Si by a simple method of sample agitation. This method effectively allows the invention to achieve anisotropic and isotropic wet-etching of c-Si.

Abstract: This document describes a system and method for selectively switching the fast-wet-etching direction of crystalline silicon, c-Si, nanostructures between the (100) and the (110) crystallographic planes of c-Si by a simple method of sample agitation. This method effectively allows the invention to achieve anisotropic and isotropic wet-etching of c-Si.

Abstract: A method for forming a modified resonator is provided. In one aspect, the method includes obtaining a resonator on top of a substrate, thereby forming an interface area between a bottom surface of the resonator and a top surface of the substrate. The resonator can include niobium or tantalum. The method also includes contacting the resonator and the substrate with a liquid acidic etching solution selected so as to have a higher etch rate towards the substrate than towards the resonator and a nonzero etch rate towards the resonator.

Abstract: Disclosed is a method for performing a physical force-assisted cleaning process on a patterned surface of a substrate, including providing a substrate having at least one patterned surface, supplying a cleaning liquid to the patterned surface, and applying a physical force to the cleaning liquid in contact with the patterned surface, whereby the physical force leads to bubble formation in the cleaning liquid. Furthermore, and prior to applying the physical force, an additive is supplied to the surface, and the additive is maintained in contact with the surface for a given time, the additive and the time being chosen so that a substantially complete wetting of the surface by the cleaning liquid is achieved.