Abstract: Provided is a method of fabricating an oxide film on a substrate. The method includes: (a) placing an electrode adjacent to a first region of the substrate on which the oxide film is to be formed under a humid atmosphere; (b) contacting the electrode with the substrate while applying voltage between the electrode and the substrate; and (c) applying pressure to the electrode while applying voltage between the electrode and the substrate and forming the oxide film on the surface of the substrate due to anodic oxidation. Accordingly, the oxide film fabrication method may be used to fabricate an electronic device with a nanometer scale.

Abstract: Embodiments include a method of forming a crystal surface with uniform monoatomic steps using metal adsorption. The method of controlling crystal surface morphology may include heating crystal to a predetermined temperature by applying a direct current (DC) voltage to its both ends; and depositing metal atoms to the crystal surface heated to a predetermined temperature at a predetermined depositing rate while maintaining the application of DC voltage so as to form monoatomic steps on the crystal surface.