Abstract: A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.

Abstract: A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.

Abstract: Slicing multiple cylindrical workpieces into wafers by a multi wire saw with a gang length LG, is performed by: a) selecting a number n?2 of workpieces from a stock of workpieces with different lengths, satisfying the inequality L G ? ( n - 1 ) · A min + ? i = 1 n ? ? L 1 ( 1 ) and making right-hand side of the inequality as large as possible, where Li with i=1 . . . n are for the lengths of the workpieces and Amin is a predefined minimum spacing, b) fixing the n workpieces successively in the longitudinal direction on a mounting plate while maintaining a spacing A?Amin therebetween such that the relationship L G ? ( n - 1 ) · A + ? i = 1 n ? ? L i ( 2 ) is satisfied, c) clamping mounting plates workpieces in a multi wire saw, and d) slicing the n workpieces perpendicularly to their longitudinal axis by means of the multi wire saw.

Abstract: Semiconductor wafers with profiled edges, are produced with decreased losses due to edge or other damage by separating a semiconductor wafer from a crystal; profiling the edge in a profile producing step wherein the edge is mechanically machined to a profile that is true to scale with respect to a predefined target profile; mechanically machining the wafer to reduce the a thickness of the semiconductor wafer; and machining the edge profile to acquire the target profile.

Abstract: A device for stacking articles which are molded and stamped in a multi-impression molding and stamping tool includes a transfer device having a single gripper plate made of lightweight construction for accepting all articles ejected from one work cycle of the molding and stamping tool. A stacking station having two stacking baskets arranged on respective arms is arranged so that the baskets are pivotable about a first axis for moving a first basket of the two baskets to a transfer position and a second basket of the two baskets to an ejection position, the transfer device transferring the articles to the transfer position of the stacking station. An ejector unit and conveyor belt are arranged proximate the ejection position, each of the first and second baskets being pivotable about a second axis, perpendicular to the first axis, at the ejection position to a pivoted position.

Abstract: In order to further develop overload protection devices for machine tools, the invention relates to an overload protection comprising a force input element and a force output element which are rigidly and non-positively interconnected by means of a positive connection and can be moved relative to one another when an overload protection is actuated. The overload protection devices are characterized by an emergency running gear; by means of which the force input element and the force output element are interconnected so as to be guided towards each other in a controlled manner when the overload protection is actuated.

Abstract: A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.

Abstract: A wire guide roll for use in wire saws for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece is provided with a coating having a thickness of at least 2 mm and at most 7.5 mm of a material which has a Shore A hardness of at least 60 and at most 99, and which contains a multiplicity of grooves through which the sawing wire is guided, the grooves each having a curved groove base with a radius of curvature which is 0.25-1.6 times the sawing wire diameter, and an aperture angle of 60-130°. A multiplicity of wafers are simultaneously sliced from a cylindrical workpiece by means of a wire saw using such wire guide rolls.

Abstract: Slicing multiple cylindrical workpieces into wafers by a multi wire saw with a gang length LG, is performed by: a) selecting a number n?2 of workpieces from a stock of workpieces with different lengths, satisfying the inequality L G ? ( n - 1 ) · A min + ? i = 1 n ? ? L 1 ( 1 ) and making right-hand side of the inequality as large as possible, where Li with i=1 . . . n are for the lengths of the workpieces and Amin is a predefined minimum spacing, b) fixing the n workpieces successively in the longitudinal direction on a mounting plate while maintaining a spacing A?Amin therebetween such that the relationship L G ? ( n - 1 ) · A + ? i = 1 n ? ? L i ( 2 ) is satisfied, c) clamping mounting plates workpieces in a multi wire saw, and d) slicing the n workpieces perpendicularly to their longitudinal axis by means of the multi wire saw.

Abstract: A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.

Abstract: Semiconductor wafers with profiled edges, are produced with decreased losses due to edge or other damage by separating a semiconductor wafer from a crystal; profiling the edge in a profile producing step wherein the edge is mechanically machined to a profile that is true to scale with respect to a predefined target profile; mechanically machining the wafer to reduce the a thickness of the semiconductor wafer; and machining the edge profile to acquire the target profile.

Abstract: A device for stacking articles which are molded and stamped in a multi-impression molding and stamping tool includes a transfer device having a single gripper plate made of lightweight construction for accepting all articles ejected from one work cycle of the molding and stamping tool. A stacking station having two stacking baskets arranged on respective arms is arranged so that the baskets are pivotable about a first axis for moving a first basket of the two baskets to a transfer position and a second basket of the two baskets to an ejection position, the transfer device transferring the articles to the transfer position of the stacking station. An ejector unit and conveyor belt are arranged proximate the ejection position, each of the first and second baskets being pivotable about a second axis, perpendicular to the first axis, at the ejection position to a pivoted position.

Abstract: The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03-0.

Abstract: The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03–0.

Abstract: A process for producing semiconductor wafers comprises simultaneous grinding of both sides of the semiconductor wafers in a single step, 1S-DDG, wherein this grinding is the only material-removing mechanical machining step which is used to machine the surfaces of the semiconductor wafers. This process produces semiconductor wafers with improved geometry and nanotopology.

Abstract: A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRmax of less than or equal to 0.13 ?m, based on a surface grid of segments with a size of 26 mm×8 mm on the front surface, wherein the maximum local height deviation P/V(10×10)max of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×10 mm.

Abstract: A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRm-1 of less than or equal to 0.13 &mgr;m, based on a surface grid of segments with a size of 26 mm×8 mm on the front surface, wherein the maximum local height deviation P/V(10×10)m-1 of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×10 mm.

Abstract: A process for producing semiconductor wafers comprises simultaneous grinding of both sides of the semiconductor wafers in a single step, 1S-DDG, wherein this grinding is the only material-removing mechanical machining step which is used to machine the surfaces of the semiconductor wafers. This process produces semiconductor wafers with improved geometry and nanotopology.

Abstract: A program-controlled entertainment and game apparatus includes a storage section, preferably in the form of one or more optical or magnetic disks. A data compression technique, such as MPEG (“MOTION PICTURE EXPERT GROUP”), is employed.

Abstract: The invention relates to an apparatus for total reflection X-ray fluorescence analysis, which allows a faster and more precise detection of the X-ray fluorescence spectrums of a sample. DRIFT detectors are used in the transducer of the apparatus in which charge carriers created can be accelerated towards a collecting anode of a very small design by a radial component of the electrical field generated by annular electrodes. A faster and more precise measurement of the charge carriers generated in the detector interior is possible due to the low capacitance of the collecting anode. The X-ray fluorescence of a sample can be measured in high-sensitive resolution by an array comprising such DRIFT detectors. The surface concentrations of the different foreign atoms in the sample can be determined in high-sensitivity resolution from the X-ray fluorescence spectrums obtained.