Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a first process chamber to apply an organic solvent to a substrate applied with a developer and introduced, and a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

Abstract: A supercritical processing apparatus includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel including a second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a processing chamber configured to provide a processing space; a fluid supply device configured to supply a supercritical fluid to the processing chamber; a fluid discharge device configured to discharge the supercritical fluid from the processing chamber; and a control device configured to control operations of the fluid supply device and the fluid discharge device, wherein the fluid supply device includes a first supply line connected to an upper portion of the processing chamber and a second supply line connected to a lower portion of the processing chamber, and the control device is configured to perform a plurality of first cycles in which the supercritical fluid is alternately supplied into the processing space through the first supply line and the second supply line to boost pressure in the processing space to a set pressure.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Abstract: A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

Abstract: The inventive concept provides a method for treating a substrate. The method for treating a substrate comprises: a pressurization step for increasing a pressure of an inner space of a chamber by supplying a treating fluid to the inner space, after taking the substrate into the inner space; a flow step for generating a flow of the treating fluid by combination of supplying and discharging the treating fluid to and from the inner space; and a depressurization step of decreasing the pressure of the inner space by discharging the treating fluid from the inner space, and wherein the pressurization step comprises: a bottom side supply process for increasing the pressure of the inner space by supplying the treating fluid to a backside of the substrate taken into the inner space; and a top side supply process of increasing the pressure of the inner space by supplying the treating fluid to a top side of the substrate taken into the inner space.

Abstract: An apparatus for processing a substrate includes a chamber having a processing space inside, a substrate support unit that supports the substrate in the processing space, and a temperature adjustment unit that is installed in the chamber and that adjusts temperature in the processing space. The temperature adjustment unit includes a heating member that heats the processing space and a cooling member that cools the processing space. The cooling member is located closer to a central axis of the chamber than the heating member.

Abstract: Embodiments of the inventive concept provide a substrate treating apparatus. According to an exemplary embodiment, the substrate treating apparatus comprises a first process chamber applying a process fluid containing an organic solvent to a substrate wet with a developer and introduced; and a second process chamber treating the substrate applied with the process fluid and introduced, through a supercritical fluid.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a first process chamber to apply an organic solvent to a substrate applied with a developer and introduced, and a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The substrate cleaning composite includes an etching compound that provides a component for treating a substrate, and a solvent that dissolves the etching compound, wherein the substrate cleaning composite is an anhydrous composite that does not include water.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a support member which supports a substrate; a treatment liquid discharging member which discharges a treatment liquid containing a monomeric substance to the substrate located in the support member; and a light irradiator which irradiates light to the treatment liquid discharged to the substrate.

Abstract: A supercritical processing apparatus includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel including a second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Abstract: A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.