Patents by Inventor Anton Tokranov

Anton Tokranov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure
    Patent number: 11276651
    Abstract: An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: March 15, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Anton Tokranov, Kai Sun, Elizabeth Strehlow, James Mazza, David Pritchard, Heng Yang, Mohamed Rabie
  • IC PRODUCT COMPRISING A SINGLE ACTIVE FIN FINFET DEVICE AND AN ELECTRICALLY INACTIVE FIN STRESS REDUCTION STRUCTURE
    Publication number: 20210358865
    Abstract: An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 18, 2021
    Inventors: Anton Tokranov, Kai Sun, Elizabeth Strehlow, James Mazza, David Pritchard, Heng Yang, Mohamed Rabie
  • SRAM bit cells formed with dummy structures
    Patent number: 11037937
    Abstract: Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.
    Type: Grant
    Filed: November 20, 2019
    Date of Patent: June 15, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Meixiong Zhao, Randy W. Mann, Sanjay Parihar, Anton Tokranov, Hong Yu, Hongliang Shen, Guoxiang Ning
  • SRAM BIT CELLS FORMED WITH DUMMY STRUCTURES
    Publication number: 20210151443
    Abstract: Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.
    Type: Application
    Filed: November 20, 2019
    Publication date: May 20, 2021
    Inventors: Meixiong Zhao, Randy W. Mann, Sanjay Parihar, Anton Tokranov, Hong Yu, Hongliang Shen, Guoxiang Ning