Patents by Inventor Anton Yurevitch Egorov

Anton Yurevitch Egorov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser structure
    Patent number: 7088753
    Abstract: The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InxGa1-xAsyN1-y with varying factors x and y, where, in particular, x=0 and y=1.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: August 8, 2006
    Assignee: Infineon Technologies AG
    Inventors: Henning Riechert, Anton Yurevitch Egorov
  • Semiconductor laser structure
    Publication number: 20030179792
    Abstract: The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InxGa1−xAsyN1−y with varying factors x and y, where, in particular, x=0 and y=1.
    Type: Application
    Filed: February 21, 2003
    Publication date: September 25, 2003
    Inventors: Henning Riechert, Anton Yurevitch Egorov