Patents by Inventor Antonella Cavanna

Antonella Cavanna has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor heterostructure and transistor of HEMT type, in particular for low-frequency low-noise cryogenic applications
    Patent number: 8987783
    Abstract: A semiconductor heterostructure having: a substrate (SS); a buffer layer (h); a spacer layer (d, e, f); a barrier layer (b, c); and which may also include a cover layer (a) is provided. The barrier layer is doped (DS); and the barrier and spacer layers are made of one or more semiconductors having wider bandgaps than the one or more materials forming the buffer layer, the heterostructure being characterized in that: the barrier layer comprises a first barrier sublayer (c) in contact with the spacer layer, and a second barrier sublayer (b), distant from the spacer layer; and in that the second barrier sublayer has a wider bandgap than the first barrier sublayer. The invention also relates to a HEMT transistor produced using such a heterostructure and to the use of such a transistor at cryogenic temperatures.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: March 24, 2015
    Assignee: Centre National de la Recherch Scientifique
    Inventors: Yong Jin, Ulf Gennser, Antonella Cavanna
  • Semiconductor Heterostructure and Transistor of HEMT Type, in Particular for Low-Frequency Low-Noise Cryogenic Applications.
    Publication number: 20130277715
    Abstract: A semiconductor heterostructure having: a substrate (SS); a buffer layer (h); a spacer layer (d, e, f); a barrier layer (b, c); and which may also include a cover layer (a) is provided. The barrier layer is doped (DS); and the barrier and spacer layers are made of one or more semiconductors having wider bandgaps than the one or more materials forming the buffer layer, the heterostructure being characterized in that: the barrier layer comprises a first barrier sublayer (c) in contact with the spacer layer, and a second barrier sublayer (b), distant from the spacer layer; and in that the second barrier sublayer has a wider bandgap than the first barrier sublayer. The invention also relates to a HEMT transistor produced using such a heterostructure and to the use of such a transistor at cryogenic temperatures.
    Type: Application
    Filed: October 7, 2011
    Publication date: October 24, 2013
    Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Yong Jin, Ulf Gennser, Antonella Cavanna