Abstract: Microelectronic modules are described. In an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The semiconductor-based integrated passive device may include an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up. The semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.

Abstract: A cell layout that may be implemented in FinFET devices or other FET devices is disclosed. The cell layout utilizes an isolation gate structure to provide routing between a signal input of an active gate and a backside metal layer. The isolation gate structure includes a metal fill surrounded by gate spacers. The metal fill connects between the topside layers in the device and the backside layer in the device. The metal fill may be connected to the signal input of the active gate through routing either in a topside metal layer or a metal wire placed in a topside insulating layer. The isolation gate structure can be part of any standard cell being placed at a cell boundary or inside the cell to provide access to backside signal routing. Additionally, filler cells with isolation gate structures may provide backside routing connections for adjacent functional cells.

Abstract: Various implementations of backside and topside routing of bitlines and wordlines in memory arrays are disclosed. Bitlines in backside and topside metal layers may be alternated between adjacent bit cells in a memory array. Alternating the location of the bitlines between bit cells in the memory array may reduce bitline capacitance in a memory array. Placing wordlines in backside metal layers may allow dual wordlines to be implemented across a span of bit cells in a memory array. The dual wordlines may be alternately connected to adjacent bit cells, thereby allowing selective toggling of bit cells based on the wordline transmitting a control signal.

Abstract: In an embodiment, a lifetime controller is configured to monitor operating conditions for a device, and to control operating conditions based on the previous conditions to improve the reliability characteristics of the device while permitting strenuous use as available. For example, the lifetime controller may permit strenuous use when the device is first powered on. Once a specified amount of strenuous use has occurred, the controller may cause the operating conditions to be reduced to reduce the wear on the device, and thus help to extend the lifetime of the device. Similarly, if a device is used in less strenuous conditions, the controller may accumulate credit which may be expended by permitting the device to operate in more strenuous conditions for a period of time.

Abstract: In an embodiment, the amount of supply voltage guardband to prevent incorrect operation due to aging effects may be modeled using an IC-specific age model generated early in the product life cycle of the IC. For example, high temperature operating life (HTOL) testing may be performed at multiple temperatures and/or voltages to develop the IC-specific age model. The IC-specific age model may be more accurate then the calculations used to develop guardband voltage as discussed previously, which rely on the aging of a single transistor. The IC-specific age model may be used along with monitoring of the aging effects during operation of the IC to predict an amount of increased guardband voltage that is currently desirable to apply to the IC. The predicted amount may vary from about zero when the IC is new to the full amount of guardband voltage when the IC is nearing end of life.

Abstract: Embodiments of an electromigration (EM) check scheme to reduce a pessimism on current density limits by checking wire context. This methodology, in an embodiment, includes applying existing electronic design automation (EDA) flows and tools to identify potentially-failing wires based on a worst-case EM check using conservative foundry current density limits. A more accurate, context-specific check can be performed on the potentially-failing wires to eliminate one or more of the potentially-failing wires if those wires do not experience worst-case conditions and meet current density limits based on an actual context of those wires. A designer can correct remaining wires which are not eliminated by the context-specific check.

Abstract: Phase change devices, particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. Structure allows application in which an electrical connection can be created between two active terminals, with control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals, allowing use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. Programming control can be placed outside of main signal path through the phase change device, reducing impact of associated capacitance and resistance of the device.

Abstract: A software tool and method for analyzing the reliability or failure rate of an integrated circuit (IC) are disclosed. The IC may include a plurality of circuit designs, and the software tool and method may aid a designer of the IC in determining a reliability rating of the IC based on reliability ratings of transistors or other circuit devices used in the circuit designs. In particular, the IC may include one or more circuit designs that have multiple instances within the IC (i.e., the same circuit design is instantiated multiple times), and the software tool and method may take into account the multiple instances when determining the reliability rating of the IC.

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device.

Abstract: In an embodiment, an aging analysis tool may be configured to identify transistors that are expected to experience aging effects according to worst case stress vectors and/or designer identified worst case conditions. The aging analysis tool may modify a representation of the circuit (e.g. a netlist), replacing the identified transistors with aged transistors (e.g. by modifying parameters of the transistors in the netlist). The aging analysis tool may process the modified netlist over a range of conditions at which the circuit is expected to operate, to ensure that the design meets specifications after aging. The process may be repeated until the aged design meets specifications (with circuit modifications made by the designer to improve the design).

Abstract: A software tool and method for analyzing the reliability or failure rate of an integrated circuit (IC) are disclosed. The IC may include a plurality of circuit designs, and the software tool and method may aid a designer of the IC in determining a reliability rating of the IC based on reliability ratings of transistors or other circuit devices used in the circuit designs. In particular, the IC may include one or more circuit designs that have multiple instances within the IC (i.e., the same circuit design is instantiated multiple times), and the software tool and method may take into account the multiple instances when determining the reliability rating of the IC.

Abstract: Phase change devices, particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. Structure allows application in which an electrical connection can be created between two active terminals, with control of the connection being effected using a separate terminal or terminals Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals, allowing use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. Programming control can be placed outside of main signal path through the phase change device, reducing impact of associated capacitance and resistance of the device.

Abstract: Impedance matching and trimming apparatuses and methods using programmable resistance devices. According to one exemplary embodiment, the impedance matching circuit includes a programmable resistance element, a comparator, a resistor divider having a common node coupled to a first input of the comparator, and an impedance element control circuit coupled between an output of the comparator and the programmable resistance element. The programmable resistance element includes one or more programmable resistance devices (PRDs). Programmed resistances of the programmable resistance element combine with the resistance of an external reference resistor to provide an impedance matched termination. A change in the resistance of the termination impedance causes a change in the output of the comparator.

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device.

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device.

Abstract: Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.

Abstract: Apparatus and methods for reducing single-event upsets (SEUs) in latch-based circuitry (e.g., static random access memory (SRAM) cells) and other digital circuitry. According to an exemplary embodiment, a latch-based circuit includes a radiation-hardened latch having first and second cross-coupled inverters and first and second programmable resistance devices (PRDs). The first PRD is coupled between the output of the first inverter and the input of the second inverter. The second PRD is coupled between the output of the second inverter and the input of the first inverter. The PRDs may be programmed to low or high-resistance states. When SET to a low-resistance state, the latch of the latch-based circuitry may be accessed to read the current logic state stored by the latch or to write a new logic state into the latch. When RESET to a high-resistance state, the latch is in a radiation-hard state, thereby preventing the latch from generating SEUs.

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device.

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device.

Abstract: Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.