Patents by Inventor Antonin ZIMMER

Antonin ZIMMER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240405146
    Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.
    Type: Application
    Filed: August 9, 2024
    Publication date: December 5, 2024
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Antonin ZIMMER, Dominique GOLANSKI, Raul Andres BIANCHI
  • Patent number: 12087873
    Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: September 10, 2024
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Antonin Zimmer, Dominique Golanski, Raul Andres Bianchi
  • Publication number: 20240204127
    Abstract: The present description concerns an avalanche photodiode comprising: a main PN junction adapted to being reverse-biased; and a plurality of semiconductor regions including at least: a first epitaxial semiconductor region of a first conductivity type; and a second semiconductor region of the second conductivity type, said second region being arranged to at least partially surround the first region, and comprising surfaces in contact with surfaces of said first region. The present description also concerns a method of manufacturing such a photodiode.
    Type: Application
    Filed: December 14, 2023
    Publication date: June 20, 2024
    Applicant: STMicroelectronics International N.V.
    Inventors: Antonin ZIMMER, Dominique GOLANSKI, Sebastien PLACE, Guillaume MARCHAND
  • Publication number: 20220310867
    Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.
    Type: Application
    Filed: March 23, 2022
    Publication date: September 29, 2022
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Antonin ZIMMER, Dominique GOLANSKI, Raul Andres BIANCHI