Abstract: A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Abstract: A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Abstract: The invention concerns a semiconductor opto-electronic component comprising at least two optically active structures (20, 30), at least one of which consists of a detector (30), characterized in that the detector or detectors (30) comprise a first active portion (33) able to detect a signal at a given wavelength and a second inactive portion (34) only slightly sensitive to the signal to be detected and exposed to the non-guided stray light conveyed in the component.

Abstract: The invention relates to a semiconductor electro-optical monolithic component. The component is made up of at least two sections, each of which has a respective waveguide, the waveguides being etched in the form of ridges, disposed in line, and buried in a cladding layer. The sections are electrically isolated from one other by a resistive zone. At the interface between two sections, the waveguides are locally of an extended width not less than the width of the resistive zone.

Abstract: A semiconductor electro-optical monolithic component includes at least first and second sections (20, 30) each having respectively a first wave guide (21) and a second wave guide (31) transmitting light, the wave guides being etched in the form of strips and confined between an upper cladding layer (11) doped with carriers of a first type and a lower layer (10A, 10B) doped with carriers of a second type, a third section (40) being disposed between the first and second sections (20, 30) and having a third guide not transmitting light, the third guide being disposed so as to couple the first guide (21) to the said second guide (31).

Abstract: An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.

Abstract: In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps:forming an undercut layer,at least one growth step on the undercut layer,forming a mesa defining the shape and the location of the top mirror and exposing the undercut layer on its vertical walls, andcontrolled lateral etching of the undercut layer. Applications include the fabrication of a semiconductor laser on a III-V (e.g. InP or GaAs) substrate.

Abstract: In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.