Patents by Inventor Antonino FIUMARA

Antonino FIUMARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a trench channel for vacuum transistor device and vacuum transistor device
    Patent number: 10102996
    Abstract: A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: October 16, 2018
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Antonino Fiumara, Marcello Frazzica, Giuseppe Digrazia
  • METHOD FOR MANUFACTURING A TRENCH CHANNEL FOR A VACUUM TRANSISTOR DEVICE AND VACUUM TRANSISTOR DEVICE
    Publication number: 20180005792
    Abstract: A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.
    Type: Application
    Filed: December 28, 2016
    Publication date: January 4, 2018
    Inventors: Antonino Fiumara, Marcello Frazzica, Giuseppe Digrazia
  • Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby
    Patent number: 9553209
    Abstract: The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: January 24, 2017
    Assignee: STMICROELECTRONICS S.R.L.
    Inventor: Antonino Fiumara
  • PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING AN EMPTY TRENCH STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
    Publication number: 20160141428
    Abstract: The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.
    Type: Application
    Filed: September 16, 2015
    Publication date: May 19, 2016
    Inventor: Antonino FIUMARA