Abstract: A semiconductor memory may be provided with a built-in test mode that is accessible through a password protection scheme. This enables access to a built-in test mode after manufacturing, if desired. At the same time, the password protection prevents use of the built-in test mode to bypass security features of the memory.

Abstract: In accordance with some embodiments, a semiconductor memory may be provided with a built-in test mode that is accessible through a password protection scheme. This enables access to a built-in test mode after manufacturing, if desired. At the same time, the password protection prevents use of the built-in test mode to bypass security features of the memory.

Abstract: A circuit is for generating an internal enabling signal for the output buffer of a memory as a function of external commands for enabling the memory and for outputting data. The circuit may be input with the external command for enabling the memory and with internally generated flags signaling when the memory is being read and when a read operation of data from the memory ends. The circuit may generate a first intermediate signal having a null logic value when the memory is enabled and the read operation of data from the memory ends. The circuit may further generate the internal enabling signal as a logic NOR between the first intermediate signal and a logic OR between the external command enabling the memory and the external command for outputting data.

Abstract: A dual power supply digital device includes a down converter for converting an externally applied supply voltage to a regulated first supply voltage for powering a core part of the logic circuitry of the digital device. A second supply voltage source provides a second supply voltage for powering input buffers of the I/O pads of the digital device. A voltage translator latch stage may be powered at the regulated down converted first supply voltage for replicating a stored inverted replica of a logic value present on a respective I/O pad of the digital device onto an input node of a respective second input logic buffer powered at the regulated core supply voltage. The device may further include a transistor having a turn-on threshold coupling the input node of the second buffer to the regulated down converted core supply voltage, with the transistor having a control gate connected to the second power supply source.

Abstract: A dual power supply digital device includes a down converter for converting an externally applied supply voltage to a regulated first supply voltage for powering a core part of the logic circuitry of the digital device. A second supply voltage source provides a second supply voltage for powering input buffers of the I/O pads of the digital device. A voltage translator latch stage may be powered at the regulated down converted first supply voltage for replicating a stored inverted replica of a logic value present on a respective I/O pad of the digital device onto an input node of a respective second input logic buffer powered at the regulated core supply voltage. The device may further include a transistor having a turn-on threshold coupling the input node of the second buffer to the regulated down converted core supply voltage, with the transistor having a control gate connected to the second power supply source.

Abstract: The invention relates to an automatic decoding method for mapping and selecting a non-volatile memory device having a LPC serial communication interface in the available addressing area on motherboards. A logic structure is incorporated in the memory device, which allows a correct decoding to address the memory to the top of the addressable area or to the bottom of the same area, i.e., in both possible cases. This logic incorporates a non-volatile register whose information is stored in a Content Address Memory to enable the automatic mapping of the memory in the addressable memory area.

Abstract: Described herein is a method for soft-programming an electrically erasable nonvolatile memory device, wherein soft-programming is carried out with a soft-programming multiplicity equal to twice that used for writing data in the memory device until the current absorbed during soft-programming is smaller than or equal to the maximum current which is available for writing operations and which can be generated within the memory device, and with a soft-programming multiplicity equal to the one used for writing data in the memory device in the case where the current absorbed during soft-programming with double multiplicity is greater than the maximum current which is available for writing operations and which can be generated within the memory device.

Abstract: A random-bit sequence generator includes a biasing circuit, a source of a noisy voltage signal biased by the biasing circuit, an amplification stage generating an amplified signal representative of the sole non-zero-frequency (AC) component of the noisy voltage signal and an output stage electrically in cascade to the amplification stage that generates a random bit sequence in function of the amplified signal. The generator also filters the undesired low-frequency disturbance components because the amplification stage comprises an input low-pass filter that feeds the zero- (DC) component of the noisy voltage signal to one of the inputs of a differential amplifier, to another input of which is fed the non-filtered noisy voltage signal.

Abstract: A circuit is for generating an internal enabling signal for the output buffer of a memory as a function of external commands for enabling the memory and for outputting data. The circuit may be input with the external command for enabling the memory and with internally generated flags signaling when the memory is being read and when a read operation of data from the memory ends. The circuit may generate a first intermediate signal having a null logic value when the memory is enabled and the read operation of data from the memory ends. The circuit may further generate the internal enabling signal as a logic NOR between the first intermediate signal and a logic OR between the external command enabling the memory and the external command for outputting data.

Abstract: An electronic circuit structure for updating a block of memory cells in a flash memory device, the memory cells storing a current value, wherein the structure includes a data latch for receiving a new value to be written on the memory cells, a controller for erasing the block of memory cells simultaneously, and programming load bank coupled to the controller and the data latch for programming the memory cells individually; the structure further includes control logic coupled to the controller for enabling the controller and for enabling the programming load bank according to a comparison between the new value and the current value.

Abstract: A circuit architecture and a method perform a page programming in non-volatile memory electronic devices equipped with a memory cell matrix and an SPI serial communication interface, as well as circuit portions associated to the cell matrix and responsible for the addressing, decoding, reading, writing and erasing of the memory cell content. Advantageously, a buffer memory bank is provided to store and output data during the page programming in the pseudo-serial mode through the interface. Data latching is performed one bit at a time and the following outputting occurs instead with at least two bytes at a time.

Abstract: A circuit architecture and a method perform a page programming in non-volatile memory electronic devices equipped with a memory cell matrix and an SPI serial communication interface, as well as circuit portions associated to the cell matrix and responsible for the addressing, decoding, reading, writing and erasing of the memory cell content. Advantageously, a buffer memory bank is provided to store and output data during the page programming in the pseudo-serial mode through the interface. Data latching is performed one bit at a time and the following outputting occurs instead with at least two bytes at a time.

Abstract: Described herein is a method for soft-programming an electrically erasable nonvolatile memory device, wherein soft-programming is carried out with a soft-programming multiplicity equal to twice that used for writing data in the memory device until the current absorbed during soft-programming is smaller than or equal to the maximum current which is available for writing operations and which can be generated within the memory device, and with a soft-programming multiplicity equal to the one used for writing data in the memory device in the case where the current absorbed during soft-programming with double multiplicity is greater than the maximum current which is available for writing operations and which can be generated within the memory device.

Abstract: An electronic circuit structure for updating a block of memory cells in a flash memory device, the memory cells storing a current value, wherein the structure includes a data latch for receiving a new value to be written on the memory cells, a controller for erasing the block of memory cells simultaneously, and programming load bank coupled to the controller and the data latch for programming the memory cells individually; the structure further includes control logic coupled to the controller for enabling the controller and for enabling the programming load bank according to a comparison between the new value and the current value.

Abstract: The invention relates to an automatic decoding method for mapping and selecting a non-volatile memory device having a LPC serial communication interface in the available addressing area on motherboards. A logic structure is incorporated in the memory device, which allows a correct decoding to address the memory to the top of the addressable area or to the bottom of the same area, i.e., in both possible cases. This logic incorporates a non-volatile register whose information is stored in a Content Address Memory to enable the automatic mapping of the memory in the addressable memory area.

Abstract: A random-bit sequence generator comprises a biasing circuit, a source of a noisy voltage signal biased by the biasing circuit, an amplification stage generating an amplified signal representative of the sole AC component of the noisy voltage signal and an output stage electrically in cascade to the amplification stage that generates a random bit sequence in function of the amplified signal. The generator also filters the undesired low-frequency disturbance components because the amplification stage comprises an input low-pass filter that feeds the DC component of the noisy voltage signal to one of the inputs of a differential amplifier, to another input of which is fed the non filtered noisy voltage signal.