Patents by Inventor Antonino Longo Minnolo

Antonino Longo Minnolo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated power device having a start-up structure
    Patent number: 7700970
    Abstract: An integrated power device includes a semiconductor body of a first conductivity type comprising a first region accommodating a start-up structure, and a second region accommodating a power structure. The two structures are separated from one another by an edge structure and are arranged in a mirror configuration with respect to a symmetry line of the edge structure. Both the start-up structure and the power structure are obtained using MOSFET devices. Both MOSFET devices are multi-drain MOSFET devices, having mesh regions, source regions and gate regions separated from one another. In addition, both MOSFET devices have drain regions delimited by columns that repeat periodically at a fixed distance. Between the two MOSFET devices there is an electrical insulation of at least 25 V.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: April 20, 2010
    Assignees: STMicroelectronics S.r.l., STMicroelectronics S.A.
    Inventors: Mario Giuseppe Saggio, Antonino Longo Minnolo, Rosalia Germana'