Patents by Inventor Antonio Grimaldi
Antonio Grimaldi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8590442Abstract: A high-pressure pump is provided with a high-pressure delivery line, a low-pressure supply line, a pumping element defined by a piston and cylinder, a cylinder head, and a gasket. The gasket is essentially flat and is provided with a sheet extending in a first plane and that has a first hole defining part of the low-pressure supply line, a second hole into which the cylinder head can be inserted, and a third hole defining part of the high-pressure delivery line. A coating of elastic material is provided to extend only around the first and second holes.Type: GrantFiled: November 25, 2008Date of Patent: November 26, 2013Assignee: Robert Bosch GmbHInventors: Rosanna Iorizzo, Antonio Grimaldi, Pietro Scotto Di Santolo
-
Patent number: 8581345Abstract: An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through the epitaxial layer. A first and a second surface region of the second conductivity type extend along the surface of the epitaxial layer on top of, and in contact with, a respective one of the columns, and a second and a third surface region of the first conductivity type extends within the first and the second surface region, respectively, facing the surface of the epitaxial layer. The columns extend at a distance from each other and are arranged staggered to one another with respect to a first direction and partially facing one another with respect to a second direction transversal to the first direction.Type: GrantFiled: April 8, 2011Date of Patent: November 12, 2013Assignee: STMicroelectronics S.r.l.Inventors: Fabio Russo, Antonio Grimaldi, Fabio Zara
-
Patent number: 8523534Abstract: A high-pressure pump for supplying fuel to an internal-combustion engine has a pump body and an actuating shaft which extends along a longitudinal axis and which is supported rotatably about the longitudinal axis by the pump body. The shaft has an eccentric portion and a prismatic jacking end. A first pumping station has a gear engaged with the prismatic jacking end and a second pumping station has at least one piston. The piston is slidable relative to the pump body transversely with respect to the longitudinal axis and is actuated by the eccentric portion of the actuating shaft. The prismatic jacking end is made of a harder material than the material with which the remainder of the actuating shaft is made.Type: GrantFiled: June 11, 2008Date of Patent: September 3, 2013Assignee: Robert Bosch GmbHInventors: Vito Spinelli, Antonio Grimaldi, Nello Medoro
-
Publication number: 20110180843Abstract: An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through the epitaxial layer. A first and a second surface region of the second conductivity type extend along the surface of the epitaxial layer on top of, and in contact with, a respective one of the columns, and a second and a third surface region of the first conductivity type extends within the first and the second surface region, respectively, facing the surface of the epitaxial layer. The columns extend at a distance from each other and are arranged staggered to one another with respect to a first direction and partially facing one another with respect to a second direction transversal to the first direction.Type: ApplicationFiled: April 8, 2011Publication date: July 28, 2011Applicant: STMICROELECTRONICS S.R.L.Inventors: Fabio RUSSO, Antonio GRIMALDI, Fabio ZARA
-
Publication number: 20100266431Abstract: A high-pressure pump is provided with a high-pressure delivery line, a low- pressure supply line, a pumping element defined by a piston and cylinder, a cylinder head, and a gasket. The gasket is essentially flat and is provided with a sheet extending in a first plane and that has a first hole defining part of the low-pressure supply line, a second hole into which the cylinder head can be inserted, and a third hole defining part of the high-pressure delivery line. A coating of elastic material is provided to extend only around the first and second holes.Type: ApplicationFiled: November 25, 2008Publication date: October 21, 2010Inventors: Rosanna Iorizzo, Antonio Grimaldi, Pietro Scotto Di Santolo
-
Publication number: 20100183449Abstract: A high-pressure pump for supplying fuel to an internal-combustion engine has a pump body and an actuating shaft which extends along a longitudinal axis and which is supported rotatably about the longitudinal axis by the pump body. The shaft has an eccentric portion and a prismatic jacking end. A first pumping station has a gear engaged with the prismatic jacking end and a second pumping station has at least one piston. The piston is slidable relative to the pump body transversely with respect to the longitudinal axis and is actuated by the eccentric portion of the actuating shaft. The prismatic jacking end is made of a harder material than the material with which the remainder of the actuating shaft is made.Type: ApplicationFiled: June 11, 2008Publication date: July 22, 2010Inventors: Vito Spinelli, Antonio Grimaldi, Nello Medoro
-
Patent number: 7715159Abstract: An electro-static discharge protection circuit including: a first input terminal and a second input terminal; a first output terminal coupled to the first input terminal, and a second output terminal coupled to the second input terminal; a first circuit branch connected between the first input terminal and the second input terminal, said first circuit branch including at least one first Zener diode having a cathode terminal and an anode terminal; a second circuit branch connected between the first output terminal and the second output terminal, wherein the first circuit branch comprises a load element coupled between the second input terminal and the anode terminal of the at least one first Zener diode; the second circuit branch includes a first transistor having a control terminal adapted to receive a transistor control voltage, the first transistor being coupled to the load element so as to receive from the load element the transistor control voltage.Type: GrantFiled: July 11, 2007Date of Patent: May 11, 2010Assignee: STMicroelectronics S.r.l.Inventors: Gaetano Bazzano, Giuseppe Consentino, Antonio Grimaldi, Monica Micciché
-
Publication number: 20080013231Abstract: An electro-static discharge protection circuit including: a first input terminal and a second input terminal; a first output terminal coupled to the first input terminal, and a second output terminal coupled to the second input terminal; a first circuit branch connected between the first input terminal and the second input terminal, said first circuit branch including at least one first Zener diode having a cathode terminal and an anode terminal; a second circuit branch connected between the first output terminal and the second output terminal, wherein the first circuit branch comprises a load element coupled between the second input terminal and the anode terminal of the at least one first Zener diode; the second circuit branch includes a first transistor having a control terminal adapted to receive a transistor control voltage, the first transistor being coupled to the load element so as to receive from the load element the transistor control voltage.Type: ApplicationFiled: July 11, 2007Publication date: January 17, 2008Applicant: STMicroelectronics S.r.l.Inventors: Gaetano Bazzano, Giuseppe Consentino, Antonio Grimaldi, Monica Micciche
-
Publication number: 20060220121Abstract: Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of conductive strips realized with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks connected to a gate pad and at least a connection layer arranged in series to at least one of said conductive strip. Such gate structure comprising at least a plurality of independent islands formed on the upper surface of the conductive strips and suitably formed on the connection layers. Said islands being realized with at least one second conductive material such as silicide.Type: ApplicationFiled: November 21, 2005Publication date: October 5, 2006Inventors: Ferruccio Frisina, Giuseppe Ferla, Angelo Magri, Antonio Grimaldi, Gaetano Bazzano
-
Patent number: 6518815Abstract: A MOS-type power device having a drain terminal, a source terminal, and a gate terminal; and a protection circuit having a first conduction terminal connected to the gate terminal, via a diffused resistor, and a second conduction terminal connected to the source terminal. The protection circuit has a resistance variable between a first value and a second value according to the operating condition of the power device. In a first embodiment of the protection circuit, an ON-OFF switch made by means of a horizontal MOS transistor has a control terminal connected to the drain terminal of the power device. In a second embodiment of the protection circuit, the ON-OFF switch is replaced with a gradual-intervention switch made by means of a P-channel JFET transistor having a control terminal connected to the gate terminal of the power device.Type: GrantFiled: January 11, 2001Date of Patent: February 11, 2003Assignee: STMicroelectronics S.r.l.Inventors: Antonio Grimaldi, Luigi Arcuri, Salvatore Pisano
-
Patent number: 6365930Abstract: Semiconductor device for high voltages including at least one power component and at least one edge termination. The edge termination includes a voltage divider including a plurality of MOS transistors in series, and the edge termination is connected between non-driveble terminals of said power component.Type: GrantFiled: June 1, 2000Date of Patent: April 2, 2002Assignee: STMicroelectronics S.r.l.Inventors: Antonino Schillaci, Antonio Grimaldi, Giuseppe Ferla
-
Publication number: 20010022525Abstract: A MOS-type power device having a drain terminal, a source terminal, and a gate terminal; and a protection circuit having a first conduction terminal connected to the gate terminal, via a diffused resistor, and a second conduction terminal connected to the source terminal. The protection circuit has a resistance variable between a first value and a second value according to the operating condition of the power device. In a first embodiment of the protection circuit, an ON-OFF switch made by means of a horizontal MOS transistor has a control terminal connected to the drain terminal of the power device. In a second embodiment of the protection circuit, the ON-OFF switch is replaced with a gradual-intervention switch made by means of a P-channel JFET transistor having a control terminal connected to the gate terminal of the power device.Type: ApplicationFiled: January 11, 2001Publication date: September 20, 2001Inventors: Antonio Grimaldi, Luigi Arcuri, Salvatore Pisano
-
Patent number: 6111297Abstract: A MOS-technology power device integrated structure includes a first plurality of elongated doped semiconductor stripes of a first conductivity type formed in a semiconductor layer of a second conductivity type, each including an elongated source region of the first conductivity type, an annular doped semiconductor region of the first conductivity type formed in the semiconductor layer and surrounding and merged with the elongated stripes, insulated gate stripes extending over the semiconductor layer between adjacent elongated stripes, a plurality of conductive gate fingers extending over and electrically connected to the insulated gate stripes, and a plurality of source metal fingers, each one extending over a respective elongated stripe and contacting the elongated stripe and the respective elongated source region, so that the source metal fingers and the conductive gate fingers are interdigitated.Type: GrantFiled: May 28, 1998Date of Patent: August 29, 2000Assignee: Consorzio per la Ricerca sulla Microelettronica nel MezzogiornoInventors: Antonio Grimaldi, Antonino Schillaci
-
Patent number: 6051862Abstract: A MOS-gated power device integrated structure comprises a plurality of elementary units formed in a semiconductor material layer of a first conductivity type. Each elementary unit is formed in a body stripe of a second conductivity type. There are a plurality of body stripes of the second conductivity type extending substantially in parallel to each other and at least one source region of the first conductivity type disposed within each body stripe. A conductive gate layer is insulatively disposed over the semiconductor material layer between the body stripes in the form of a first web structure. A second web structure of the second conductivity type is formed in the semiconductor material layer and comprises an annular frame portion surrounding the plurality of body stripes and at least one first elongated stripe extending between two sides of the annular frame portion in a direction substantially orthogonal to the body stripes and that is merged at each end with the annular frame portion.Type: GrantFiled: November 3, 1998Date of Patent: April 18, 2000Assignees: SGS-Thomson Microelectronics S.r.l., Consorzio per la Ricerca sulla Microelettronica nel MezzogiornoInventors: Antonio Grimaldi, Antonino Schillaci, Ferruccio Frisina, Giuseppe Ferla
-
Patent number: 5841167Abstract: A MOS-gated power device integrated structure comprises a plurality of elementary units formed in a semiconductor material layer of a first conductivity type. Each elementary unit is formed in a body stripe of a second conductivity type. There are a plurality of body stripes of the second conductivity type extending substantially in parallel to each other and at least one source region of the first conductivity type disposed within each body stripe. A conductive gate layer is insulatively disposed over the semiconductor material layer between the body stripes in the form of a first web structure. A second web structure of the second conductivity type is formed in the semiconductor material layer and comprises an annular frame portion surrounding the plurality of bodystripes and at least one first elongated stripe extending between two sides of the annular frame portion in a direction substantially orthogonal to the body stripes and that is merged at each end with the annular frame portion.Type: GrantFiled: December 23, 1996Date of Patent: November 24, 1998Assignees: SGS-Thomson Microelectronics S.r.l., Consorzio per la Ricerca sulla Microelettronica nel MezzogiornoInventors: Antonio Grimaldi, Antonino Schillaci, Ferruccio Frisina, Giuseppe Ferla
-
Patent number: 5798554Abstract: A MOS-technology power device integrated structure includes a first plurality of elongated doped semiconductor stripes of a first conductivity type formed in a semiconductor layer of a second conductivity type, each including an elongated source region of the first conductivity type, an annular doped semiconductor region of the first conductivity type formed in the semiconductor layer and surrounding and merged with the elongated stripes, insulated gate stripes extending over the semiconductor layer between adjacent elongated stripes, a plurality of conductive gate fingers extending over and electrically connected to the insulated gate stripes, and a plurality of source metal fingers, each one extending over a respective elongated stripe and contacting the elongated stripe and the respective elongated source region, so that the source metal fingers and the conductive gate fingers are interdigitated.Type: GrantFiled: February 22, 1996Date of Patent: August 25, 1998Assignee: Consorzio per la Ricerca sulla Microelettronica nel MezzogiornoInventors: Antonio Grimaldi, Antonino Schillaci
-
Patent number: 5317182Abstract: A smart power integrated circuit, in which the power stage includes a vertical-current-flow NMOS power transistor having many paralleled cells. A deeper P-type diffusion surrounds the P-type body region of the cells at the edge of the power stage. The junction between this deep P-type diffusion and the laterally adjacent N-type material has a lower curvature than the junction which would be formed by the P-type body region alone. This increases the transistor's breakdown voltage without degrading the transistor's on-state resistance R.sub.on.Type: GrantFiled: May 29, 1991Date of Patent: May 31, 1994Assignee: Consorzio Per la Ricerca Sulla MicroelectronicaInventors: Raffaele Zambrano, Antonio Grimaldi