Abstract: There is described a structure which is photosensitive to the colour of a light radiation; said structure being formed by a semiconductor substrate having a first type of conductivity and the substrate is adapted to generate a different distribution of carriers upon incidence of a light radiation as the depth varies as a function of the at least one wave length of the light radiation. The structure comprises at least one first and one second element, both arranged in the substrate and adapted to collect the generated carriers; both the first and second element being adapted to generate first and second electrical signals as a response to the amount of collected carriers.

Abstract: An apparatus for detecting energy and point of incidence of an ionizing event comprising a semiconductor layer with a first type of conductivity, in which at least one first doped region with the first type of conductivity and a corresponding plurality of second doped regions with a second type of conductivity associated to said at least one first doped region are formed on a first surface of said layer, said at least first doped region and said corresponding plurality of second doped regions defining a respective drift path for charge carriers with the first type of conductivity, and at least one third doped region with the second type of conductivity is formed on a second surface of said layer, and means for biasing said second doped regions and said third doped region which is capable of reversely biasing the junctions between the second doped regions and the semiconductor layer and between the third doped region and the semiconductor layer so as to deplete the semiconductor layer.