Abstract: A layer of yttrium (Y) and aluminum nitride (AlN) is employed as a back-barrier to improve confinement of electrons within a channel layer of a high electron mobility transistor (HEMT). As HEMT dimensions are reduced and a channel length decreases, current control provided by a gate also decreases, and it becomes more difficult to “pinch-off” current flow through the channel. A back-barrier layer on a back side of the channel layer improves confinement of electrons to improve pinch-off but does not cause a second 2DEG to be formed below the back-barrier layer. The YAlN layer can be lattice-matched to the channel layer to avoid lattice strain, and a thin layer of YAlN provides less thermal resistance than HEMTs made with thicker back-barrier materials. Due to its chemical nature, a YAlN layer can be used as an etch stop layer.

Abstract: Molecular beam epitaxy (MBE) reactor structures for the unit process of n+GaN contact regrowth using ammonia as a nitrogen source are provided. Structures and methods for enhancing evacuation of ammonia in a GaN regrowth process are also provided.

Abstract: The present invention provides a catheter and gauze band that includes a catheter and gauze retaining sections along the outer and inner surface of the band with a specially adapted snap in device along the band to receive and retain a catheter tube. This present invention also includes methods of use. All publications including patent documents referred to in this application are incorporated in their entirety for all purposes to the same extent as if each individual publication were individually incorporated by reference. All headings are for the convenience of the reader and should not be used to limit the meaning of the text following the heading unless so specified.

Abstract: An interface device for controlling light sources includes a target region; and a controller that associates a preset with an illumination region, and controls a light source in the illumination region when an indicator associated with the preset and illumination region is moved into the target region. The controller associates the preset with the illumination region when the preset is moved to an area of the interface device associated with the illumination region. The controller is further configured to change light attributes of light emitted from the light source when the indicator is moved across the target region, such as providing maximum intensity when the indicator is at the center of the target region. The light attributes include intensity, color, hue, saturation, beam direction and/or beam width of the light.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid state laser and locating edges of the substrate. The cutting is stopped based on the edge location, to prevent impacting background elements. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire.

Abstract: An interface device for controlling light sources includes a target region; and a controller that associates a preset with an illumination region, and controls a light source in the illumination region when an indicator associated with the preset and illumination region is moved into the target region. The controller associates the preset with the illumination region when the preset is moved to an area of the interface device associated with the illumination region. The controller is further configured to change light attributes of light emitted from the light source when the indicator is moved across the target region, such as providing maximum intensity when the indicator is at the center of the target region. The light attributes include intensity, color, hue, saturation, beam direction and/or beam width of the light.

Abstract: An interface device (100) for controlling light sources (110) includes a target region (205); and a controller (120) that associates a preset with an illumination region, and controls a light source (110) in the illumination region when an indicator (215) associated with the preset and illumination region is moved into the target region (205). The controller (120) associates the preset with the illumination region when the preset is moved to an area of the interface device (100) associated with the illumination region. The controller (120) is further configured to change light attributes of light emitted from the light source (110) when the indicator (215) is moved across the target region (205), such as providing maximum intensity when the indicator (215) is at the center of the target region (205). The light attributes include intensity, color, hue, saturation, beam direction and/or beam width of the light.

Abstract: Apparatus and methods for ultrasonic coupling between a coupling fluid and an object using micro surface tension and capillary effects are provided. The apparatus may include a chamber comprising a wall, a bottom, and a fluid inlet. The fluid inlet may allow a fluid to enter the chamber. Portions of the wall may have a number of slits with dimensions that allow a controlled overflow of the fluid to hold a top surface of the fluid in a stable contact with the object when the fluid is flowing into the chamber. The object may be located at a distance from the top of the wall. Additional apparatus and methods are disclosed.

Abstract: Apparatus and methods for ultrasonic coupling between a coupling fluid and an object using micro surface tension and capillary effects are provided. The apparatus may include a chamber comprising a wall, a bottom, and a fluid inlet. The fluid inlet may allow a fluid to enter the chamber. Portions of the wall may have a number of slits with dimensions that allow a controlled overflow of the fluid to hold a top surface of the fluid in a stable contact with the object when the fluid is flowing into the chamber. The object may be located at a distance from the top of the wall. Additional apparatus and methods are disclosed.

Abstract: A control (410) for adjusting (420) the color output of a white light (430) provides an interface (210, 220, 301) that does not refer to, or depend upon an understanding of, color-temperature. The user interface control (210, 220, 301) uses the analogy (260, 270) of the light produced on cloudy days and the light produced on sunny days to distinguish between a low color-temperature output and a high color-temperature output. Using this cloudy-sunny description (260, 270) of the range of control (155, 255) of the light output, the terms “color” or “color-temperature” need not be introduced in the description of the output of a “white” light source (430).

Abstract: An interface device (100) for controlling light sources (110) includes a target region (205); and a controller (120) that associates a preset with an illumination region, and controls a light source (110) in the illumination region when an indicator (215) associated with the preset and illumination region is moved into the target region (205). The controller (120) associates the preset with the illumination region when the preset is moved to an area of the interface device (100) associated with the illumination region. The controller (120) is further configured to change light attributes of light emitted from the light source (110) when the indicator (215) is moved across the target region (205), such as providing maximum intensity when the indicator (215) is at the center of the target region (205). The light attributes include intensity, color, hue, saturation, beam direction and/or beam width of the light.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid state laser and locating edges of the substrate. The cutting is stopped based on the edge location, to prevent impacting background elements. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

Abstract: A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.