Abstract: Systems and methods which provide a semiconductor with thin metallic film deposition sensor configuration are described. Thin metallic film semiconductor sensors of embodiments may be utilized in determining various impingements upon the sensor surface, such as from objects touching, hovering near, or light sources illuminating a sensor surface. Embodiments of a thin metallic film deposition semiconductor sensor provide a non-resistive, non-capacitive sensor configuration operable for determining position of various objects, including both electrically conductive objects and non-electrically conductive objects. A semiconductor with thin metallic film sensor of embodiments may additionally or alternatively provide a magnetic field sensor configuration operable for determining magnitude and/or direction with respect to a magnetic field.

Abstract: Systems and methods which provide a semiconductor with thin metallic film deposition sensor configuration are described. Thin metallic film semiconductor sensors of embodiments may be utilized in determining various impingements upon the sensor surface, such as from objects touching, hovering near, or light sources illuminating a sensor surface. Embodiments of a thin metallic film deposition semiconductor sensor provide a non-resistive, non-capacitive sensor configuration operable for determining position of various objects, including both electrically conductive objects and non-electrically conductive objects. A semiconductor with thin metallic film sensor of embodiments may additionally or alternatively provide a magnetic field sensor configuration operable for determining magnitude and/or direction with respect to a magnetic field.

Abstract: The disclosed subject matter relates to a non-volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or “dot”. For appropriate geometry and dimensions of the dot, a two-fold, energetically-degenerate micromagnetic configuration (100 or 200) can be stabilized. Such a stable configuration can consist of two magnetic vortices (1081, 1082) and a flower state region (110). Due to energy minimization, the flower state region can be off-center (relative to a minor axis (106)) and along the major axis (104) of the dot. An electrical current (302) flowing perpendicular to the plane at, or in proximity to, the dot center can, according to current polarity, switch the configuration or state of the dot between the two specular magnetically stable configurations (e.g., a write operation). Reading of the cell state can be accomplished by using the magnetoresistive effect.

Abstract: The disclosed subject matter relates to a non-volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or “dot”. For appropriate geometry and dimensions of the dot, a two-fold, energetically-degenerate micromagnetic configuration (100 or 200) can be stabilized. Such a stable configuration can consist of two magnetic vortices (1081, 1082) and a flower state region (110). Due to energy minimization, the flower state region can be off-center (relative to a minor axis (106)) and along the major axis (104) of the dot. An electrical current (302) flowing perpendicular to the plane at, or in proximity to, the dot center can, according to current polarity, switch the configuration or state of the dot between the two specular magnetically stable configurations (e.g., a write operation). Reading of the cell state can be accomplished by using the magnetoresistive effect.

Abstract: A thin-film device for detecting the variation of intensity of physical quantities, in particular a magnetic field, in a continuous way, comprises an electrical circuit including one or more sensitive elements, which are designed to vary their own electrical resistance as a function of the intensity of a physical quantity to be detected. One or more of the sensitive elements comprise at least one nanoconstriction, and the nanoconstriction comprises at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel. The nanochannel is able to set up a domain wall that determines the electrical resistance of the nanoconstriction as a function of the position, with respect to the nanochannel, of the domain wall formed in the sensor device.

Abstract: Described herein is a magnetoresistive network responsive to a magnetic field of the type comprising a plurality of magnetoresistive elements. According to the invention, the one or more magnetoresistive elements comprise at least one magnetoresistive element in the form of nanoconstriction, the nanoconstriction comprising at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel, the nanochannel being able to set up a domain wall that determines an electrical resistance of the nanoconstriction as a function of the position, with respect to said nanochannel, of said domain wall formed in said sensor device.

Abstract: Described herein is a thin-film device for detecting physical quantities, in particular a magnetic field, of the type comprising an electrical circuit including one or more sensitive elements, which are designed to vary their own electrical resistance as a function of a physical quantity to be detected, said one or more sensitive elements comprising at least one nanoconstriction, said nanoconstriction comprising at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel, said nanochannel being able to set up a domain wall that determines the electrical resistance of said nanoconstriction as a function of the position, with respect to said nanochannel, of said domain wall formed in said sensor device.

Abstract: Described herein is a magnetoresistive network responsive to a magnetic field of the type comprising a plurality of magnetoresistive elements. According to the invention, the one or more magnetoresistive elements comprise at least one magnetoresistive element in the form of nanoconstriction, said nanoconstriction comprising at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel, said nanochannel being able to set up a domain wall that determines an electrical resistance of said nanoconstriction as a function of the position, with respect to said nanochannel, of said domain wall formed in said sensor device.