Patents by Inventor Antonius E. T. Kuiper

Antonius E. T. Kuiper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090195904
    Abstract: The invention relates to a method of manufacturing a device (10) comprising a layer (12) having a pattern of disjunct portions (14) of magnetic material (18) generating a corresponding pattern of local magnetic fields (2). The magnetic material (18) is constituted of particles (22) dispersed in a solid substance (24). The particles are magnetically stable and substantially aligned for generating the local magnetic fields (2). The method comprises the steps of: providing a substance (32) having the particles (22) dispersed in the substance (32), the substance (32) having a viscosity for allowing the particles (22) to move in the substance (32), creating the pattern of disjunct portions (14) of the substance (32) in the layer (12) of the device (10), applying an external magnetic field (50) for substantially aligning the particles (22) in the disjunct portions (14) of the substance (32), and solidifying the substance (32) for obtaining the solid substance (24).
    Type: Application
    Filed: July 13, 2006
    Publication date: August 6, 2009
    Applicant: NXP B.V.
    Inventors: Jaap Ruigrok, Marcello L., M. Balistreri, Antonius E., T. Kuiper, Michel M., J. Decre
  • Patent number: 6501271
    Abstract: A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables sensors with complementary output signals so that a Wheatstone bridge is possible. The improvement is obtained by a combination of measures including the use of a combination of an Artificial Anti Ferromagnet as the pinned layer and an IrMn exchange-biasing layer, the latter preferably arranged at the bottom of the layer stack on top of a buffer layer.
    Type: Grant
    Filed: May 6, 1999
    Date of Patent: December 31, 2002
    Assignee: Koninkiljke Philips Electronics N.V.
    Inventors: Kars-Michiel H. Lenssen, Antonius E. T. Kuiper, Freddy Roozeboom