Abstract: A number of wafer slices of semiconductor material are heated in a reactor tube arranged inside a furnace tube with the reactor tube having openings through which a reaction gas is passed for depositing semiconductor material on the wafer slices. This is effected by producing in the furnace tube a flow of reaction gas along the outer side walls of the reactor tube and by passing only a part of this flow through the openings into the reactor tube. By using this method, particles of large size and different composition, which may be formed in the reaction gas, are prevented from being deposited on the wafer slices.

Abstract: The invention relates to a semiconductor device having a disk-shaped semiconductor body in which on the side of a first major surface at least one circuit element is formed and in which a second major surface present opposite to the first major surface is covered with an adhesive layer on which at least one metal layer is provided, which metal layer is bonded to a carrier. According to the invention, the adhesive layer is formed of doped amorphous silicon of the same conductivity type as the semiconductor body on the side of the second major surface.