Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

Abstract: A faceted reflector (32, 32?) for receiving an incident radiation beam (2) and directing a reflected radiation beam at a target. The faceted reflector comprises a plurality of facets, each of the plurality of facets comprising a reflective surface. The reflective surfaces of each of a first subset of the plurality of facets define respective parts of a first continuous surface and are arranged to reflect respective first portions of the incident radiation beam in a first direction to provide a first portion of the reflected radiation beam. The reflective surfaces of each of a second subset of the plurality of facets define respective parts of a second continuous surface and are arranged to reflect respective second portions of the incident radiation beam in a second direction to provide a second portion of the reflected radiation beam.

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A lithographic projection apparatus is provided with a EUV radiation system that includes a source chamber, a supply constructed and arranged to supply a target material to a predetermined plasma formation position, an optical system formed by three or more mirrors arranged to establish a beam path extending to the target material when the target material is located at the predetermined plasma formation position, and a laser system constructed and arranged to provide a laser beam along the beam path for interaction with the target material to produce an EUV radiation-emitting plasma inside the chamber.

Abstract: A faceted reflector (32, 32?) for receiving an incident radiation beam (2) and directing a reflected radiation beam at a target. The faceted reflector comprises a plurality of facets, each of the plurality of facets comprising a reflective surface. The reflective surfaces of each of a first subset of the plurality of facets define respective parts of a first continuous surface and are arranged to reflect respective first portions of the incident radiation beam in a first direction to provide a first portion of the reflected radiation beam. The reflective surfaces of each of a second subset of the plurality of facets define respective parts of a second continuous surface and are arranged to reflect respective second portions of the incident radiation beam in a second direction to provide a second portion of the reflected radiation beam.

Abstract: An exposure apparatus having a projection system configured to project a plurality of radiation beams onto a target and an image slicer. The image slicer is arranged in an inverted configuration such that, if an input image formed of a plurality of separated image regions were provided to the image slicer, it would output an output image formed from the plurality of image regions, each arranged to adjoin an adjacent image region. The exposure apparatus is configured such that each of the radiation beams is input into the image slicer at a location corresponding to a respective one of the separated image regions.

Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

Abstract: A radiation system is configured to generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture.

Abstract: A lithographic apparatus is disclosed that includes a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam and a substrate table constructed to hold a substrate. Further, the lithographic apparatus includes a projection system configured to project the patterned radiation beam onto a target portion of the substrate, the projection system being mounted to a reference element of the lithographic apparatus by a resilient mount to reduce a transfer of high frequency vibration from the reference element to the projection system and a control system to counteract a position error of the substrate table and the support relative to the projection system.

Abstract: An exposure apparatus having a projection system configured to project a plurality of radiation beams onto a target and an image slicer. The image slicer is arranged in an inverted configuration such that, if an input image formed of a plurality of separated image regions were provided to the image slicer, it would output an output image formed from the plurality of image regions, each arranged to adjoin an adjacent image region. The exposure apparatus is configured such that each of the radiation beams is input into the image slicer at a location corresponding to a respective one of the separated image regions.

Abstract: A lithographic apparatus comprising a source that generates a beam of radiation, a support structure supporting a patterning device, a substrate table for holding a substrate, and a projection system projecting the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further comprises a vibration measurement apparatus configured to measure relative vibration between the patterning device and the substrate during exposure of the target portion. A control apparatus adjusts power of the radiation beam to compensate for the effect of the measured relative vibration on the pattern projected onto the substrate.

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A lithographic projection apparatus including a support structure configured to support a patterning device, the patterning device configured to impart a beam of radiation with a pattern in its cross-section; a substrate holder configured to hold a substrate; a projection system configured to expose the patterned beam of radiation on a target portion of the substrate; and a system configured to compensate one or more perturbation factors by providing an additional beam of radiation to be exposed on the target portion of the substrate, the additional beam of radiation being imparted in its cross-section with an additional pattern which is based on the pattern of the patterning device and on lithographic projection apparatus property data, the lithographic projection apparatus property data characterizing a level and nature of one or more systematic perturbation factors of different lithographic apparatus.

Abstract: A lithographic apparatus comprising a source that generates a beam of radiation, a support structure supporting a patterning device, a substrate table for holding a substrate, and a projection system projecting the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further comprises a vibration measurement apparatus configured to measure relative vibration between the patterning device and the substrate during exposure of the target portion. A control apparatus adjusts power of the radiation beam to compensate for the effect of the measured relative vibration on the pattern projected onto the substrate.

Abstract: A lithographic projection apparatus is provided with a EUV radiation system that includes a source chamber, a supply constructed and arranged to supply a target material to a predetermined plasma formation position, an optical system formed by three or more mirrors arranged to establish a beam path extending to the target material when the target material is located at the predetermined plasma formation position, and a laser system constructed and arranged to provide a laser beam along the beam path for interaction with the target material to produce an EUV radiation-emitting plasma inside the chamber.

Abstract: A radiation system is configured to generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture.

Abstract: A lithographic projection apparatus including a support structure configured to support a patterning device, the patterning device configured to impart a beam of radiation with a pattern in its cross-section; a substrate holder configured to hold a substrate; a projection system configured to expose the patterned beam of radiation on a target portion of the substrate; and a system configured to compensate one or more perturbation factors by providing an additional beam of radiation to be exposed on the target portion of the substrate, the additional beam of radiation being imparted in its cross-section with an additional pattern which is based on the pattern of the patterning device and on lithographic projection apparatus property data, the lithographic projection apparatus property data characterizing a level and nature of one or more systematic perturbation factors of different lithographic apparatus.

Abstract: An optical apparatus is disclosed that has a convex mirror and a concave mirror with an aperture, wherein, in use, radiation from a radiation emitter passes through the aperture and is incident upon the convex mirror before being incident upon the concave mirror, the optical apparatus arranged to form the radiation into a radiation beam, wherein the concave mirror is translatable towards and away from the convex mirror or the convex mirror is translatable towards and away from the concave mirror, to adjust divergence of the radiation beam.