Abstract: This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Abstract: In one aspect, a transistor-level description of a circuit is accessed, where the circuit includes a plurality of transistors. A transistor-level circuit simulation of the circuit's response to an input stimulus is performed, based on the transistor-level description of the circuit. Activity levels for the transistors in the circuit are determined from the transistor-level circuit simulation. A graphical representation of the circuit is rendered. The graphical representation contains graphical elements that represent components of the circuit, and the graphical elements are visually coded according to the activity levels of the transistors in the corresponding components.

Abstract: Systems and methods for automatic test pattern generation (ATPG) for parametric faults are described. A model may be constructed to predict a measurement margin for an integrated circuit (IC) design based on a random sample of random variables. A set of failure events may be determined for the IC design using the model, where each failure event may correspond to a set of values of the random variables that is expected to cause a metric for the IC design to violate a threshold.

Abstract: A system and method of detecting defects in an analog circuit is provided. A method includes identifying a channel connected block (CCB) from a netlist, creating defect for the CCB to be injected during a simulation, obtaining a first measurement of an output node of the CCB by performing a first analog circuit simulation for the CCB based on providing excitations as inputs to the CCB and obtaining a second measurement of the output node of the CCB by performing a second analog circuit simulation for the CCB based on providing the excitations as the inputs to the CCB and injecting the defect. The method can further include determining a defect type based on the first measurement and the second measurement.

Abstract: A method, apparatus, and/or computer program product can perform an analog defect simulation on an electronic device. The method, apparatus, and/or computer program product can generate a defect catalog which identifies a defect class relating to a defect and a modeling parameter that is associated with the defect class. The method, apparatus, and/or computer program product can receive a weight formula that identifies a weight for the defect class in relation to the modeling parameter. The method, apparatus, and/or computer program product can call a defect weight function to return the weight from the defect weight formula. The method, apparatus, and/or computer program product can perform the analog defect simulation on the electronic device. The method, apparatus, and/or computer program product can determine a simulation statistic relating to the analog defect simulation utilizing the weight.

Abstract: A method of evaluating sampling sizes for circuit simulation comprises generating a plurality of coverage scenarios based on a defect universe, determining a coverage amount for each of the plurality of coverage scenarios, and associating the plurality of coverage scenarios with a plurality of bins based on the coverage amount for each of the plurality of coverage scenarios. The method further comprises sampling, with a first sampling size, each of the coverage scenarios to determine first sampled coverage scenarios, and determining an error value for each of the plurality of coverage scenarios based on the coverage amount of each of the plurality of coverage scenarios and a coverage amount of a respective one of the first sampled coverage scenarios.

Abstract: A method of evaluating sampling sizes for circuit simulation comprises generating a plurality of coverage scenarios based on a defect universe, determining a coverage amount for each of the plurality of coverage scenarios, and associating the plurality of coverage scenarios with a plurality of bins based on the coverage amount for each of the plurality of coverage scenarios. The method further comprises sampling, with a first sampling size, each of the coverage scenarios to determine first sampled coverage scenarios, and determining an error value for each of the plurality of coverage scenarios based on the coverage amount of each of the plurality of coverage scenarios and a coverage amount of a respective one of the first sampled coverage scenarios.

Abstract: This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Abstract: A method, apparatus, and/or computer program product can performing an analog defect simulation on an electronic device. The method, apparatus, and/or computer program product can generate a defect catalog which identifies a defect class relating to a defect and a modeling parameter that is associated with the defect class. The method, apparatus, and/or computer program product can receive a weight formula that identifies a weight for the defect class in relation to the modeling parameter. The method, apparatus, and/or computer program product can call a defect weight function to return the weight from the defect weight formula. The method, apparatus, and/or computer program product can perform the analog defect simulation on the electronic device. The method, apparatus, and/or computer program product can determine a simulation statistic relating to the analog defect simulation utilizing the weight.

Abstract: A system and method of detecting defects in an analog circuit is provided. A method includes identifying a channel connected block (CCB) from a netlist, creating defect for the CCB to be injected during a simulation, obtaining a first measurement of an output node of the CCB by performing a first analog circuit simulation for the CCB based on providing excitations as inputs to the CCB and obtaining a second measurement of the output node of the CCB by performing a second analog circuit simulation for the CCB based on providing the excitations as the inputs to the CCB and injecting the defect. The method can further include determining a defect type based on the first measurement and the second measurement.

Abstract: In modern VLSI technology, often, stacked arrays of smaller sized MOSFETs are used to achieve the desired width and length of a design MOSFET. In analog defect simulation, each physical transistor can contribute to the circuit's defect universe and this can directly lead to tremendous increase in defect simulation time. Here we propose a method of finding equivalent defects in the context of stacked MOSFET arrays that can lead to significant reduction in defect simulation effort and yet provide accurate defect coverage results.

Abstract: Systems and methods for automatic test pattern generation (ATPG) for parametric faults are described. A model may be constructed to predict a measurement margin for an integrated circuit (IC) design based on a random sample of random variables. A set of failure events may be determined for the IC design using the model, where each failure event may correspond to a set of values of the random variables that is expected to cause a metric for the IC design to violate a threshold.

Abstract: A circuit description, such as a hierarchical netlist, is obtained for an integrated circuit. Based on the circuit description, a treemap representation is rendered using blocks, nodes, and/or devices from the hierarchical netlist as objects, or leaves, in the treemap representation. Using a virtual layout, the leaves are positioned in the treemap representation independent of their physical layout. Circuit properties for the electronic design are also obtained using various methods such as a circuit simulator. The circuit properties are displayed to a user on the treemap representation.

Abstract: A circuit description, such as a hierarchical netlist, is obtained for an integrated circuit. Based on the circuit description, a treemap representation is rendered using blocks, nodes, and/or devices from the hierarchical netlist as objects, or leaves, in the treemap representation. Using a virtual layout, the leaves are positioned in the treemap representation independent of their physical layout. Circuit properties for the electronic design are also obtained using various methods such as a circuit simulator. The circuit properties are displayed to a user on the treemap representation.

Abstract: A system and a method for performing circuit simulation on a integrated circuit design that is represented by a hierarchical netlist. The system and method utilize, in one embodiment, an event driven simulator that divides or “cuts” along the hierarchical boundaries of the input netlist in order to produce subcircuits that are then converted into their Thevenin equivalents. Once a Thevenin equivalent is computed, matrix computations are used to compute the cut node voltages and sensitivity vectors may be used to then determine the internal node voltages. This is done for each event. In the event driven example, a group of leaf cells are identified that are touched by a given event. This group is then cut based on the hierarchical boundaries of the input netlist. The system maintains dynamic node voltages across the entire netlist and also maintains instance specific dynamic information for each cell.