Abstract: Mask Shaping using temporal and spatial Coherence for Ultra High Resolution Lithographic imaging and printing refers to methods and apparatus that can be adopted to print near-ideal images of basic shapes when the shapes are asymmetrical. Ultra High Resolution Lithography refers to proximity printing of clear mask fetures when they are demagnified by bias. In this lithography, optical components, including lenses and mirrors, are not used between the mask and wafer. When a clear mask feature is asymmetric and the mask-wafer gap is set so that the Critical Condition is maintained for the shortest print dimension, then undesirable features typically appear in other longer dimensions consistent with Fresnel diffraction. The undesirable featurs impede illumination uniformity for controlled printing in exposed areas. Such features, including Bright Spots and Ripple, are counteracted by the Mask Shaping that is designed to optimize printing with temporal and spatial coherence near the Critical Condition.