Abstract: The invention provides a micromechanical device comprising a support structure and a deflecting element connected to the support structure, wherein the deflecting element comprises at least one deformable member adapted to deform extensionally, flexurally or torsionally with respect to a deformation axis for allowing deflection of the deflecting element with respect to the support structure. Further, there are means for statically deflecting the deflecting element or detecting the magnitude of static deflection of the deflecting element. According to the invention, the deformable member is made of silicon doped with an n-type doping agent to a doping concentration of at least 1.1*1020 cm?3. The invention allows for manufacturing micromechanical devices whose mechanical operation is not affected by prevailing temperature conditions.

Abstract: The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm?3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Abstract: The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Abstract: The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*1020 cm?3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF2) to be 12 ppb/C2 or less at least at one temperature. Several practical implementations are presented.

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

Abstract: The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Abstract: The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm?3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Abstract: The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*1020 cm?3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF2) to be 12 ppb/C2 or less at least at one temperature. Several practical implementations are presented.

Abstract: An apparatus for enabling sharing of one or more connectivity parameters with one or more friends may include a processor and memory storing executable computer code causing the apparatus to at least perform operations including detecting one or more connection parameters and associated data of at least one access point. The computer program code may further cause the apparatus to facilitate provision of the connection parameters and associated data for inclusion within at least one profile of a user. The profile may be associated with a social network service identifying one or more relationships among one or more determined friends of the user. The computer program code may further cause the apparatus to enable provision of the connection parameters and associated data to at least one device of the user or one or more devices of the friends. Corresponding methods and computer program products are also provided.

Abstract: The invention relates to a temperature compensated micromechanical resonator and method of manufacturing thereof. The resonator comprises a resonator element comprising a semiconductor crystal structure, which is doped so as to reduce its temperature coefficient of frequency, transducer means for exciting to the resonator element a vibrational mode. According to the invention the crystal orientation and shape of the resonator element are chosen to allow for a shear mode having a saddle point to be excited to the resonator element, and said transducer means are adapted to excite said shear mode to the resonator element. Accurate micromechanical resonators with now temperature drift can be achieved by means of the invention.

Abstract: The invention relates to temperature compensated micro-electro-mechanical (MEMS) resonators (300) preferably made of silicon. Prior art MEMS resonators have a significant temperature coefficient of resonance frequency, whereby it is difficult to achieve a sufficiently good frequency stability. The inventive MEMS resonator has a resonance plate (310) which resonates in Lamé mode. The resonance plate is p+ doped material, such as silicon doped with boron, and the concentration of the p+ doping is such that the plate has a temperature coefficient of resonance frequency near to zero. The tensile stress and the second order temperature coefficient can further be reduced by doping the plate with germanium.

Abstract: The invention relates to a microelectromechanical resonators and a method of manufacturing thereof. The resonator comprises at least two resonator elements made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element coupled to said resonator elements and capable of exciting a resonance mode to the resonator elements. According to the invention, said at least one transducer element is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements between the at least two resonator elements and adapted to excite to the resonator elements as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the c44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.

Abstract: The invention relates to a temperature compensated micromechanical resonator and method of manufacturing thereof. The resonator comprises a resonator element comprising a semiconductor crystal structure, which is doped so as to reduce its temperature coefficient of frequency, transducer means for exciting to the resonator element a vibrational mode. According to the invention the crystal orientation and shape of the resonator element are chosen to allow for a shear mode having a saddle point to be excited to the resonator element, and said transducer means are adapted to excite said shear mode to the resonator element. Accurate micromechanical resonators with now temperature drift can be achieved by means of the invention.

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.

Abstract: The invention concerns a novel bulk acoustic wave (BAW) resonator design and method of manufacturing thereof The bulk acoustic wave resonator comprises a resonator portion, which is provided with at least one void having the form of a trench which forms a continuous closed path on the resonator portion. By manufacturing the void in the same processing step as the outer dimensions of the resonator portion, the effect of processing variations on the resonant frequency of the resonator can be reduced. By means of the invention, the accuracy of BAW resonators can be increased.

Abstract: The invention relates to a microelectromechanical resonators and a method of manufacturing thereof. The resonator comprises at least two resonator elements made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element coupled to said resonator elements and capable of exciting a resonance mode to the resonator elements. According to the invention, said at least one transducer element is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements between the at least two resonator elements and adapted to excite to the resonator elements as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the c44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.

Abstract: The invention relates to temperature compensated micro-electro-mechanical (MEMS) resonators (300) preferably made of silicon. Prior art MEMS resonators have a significant temperature coefficient of resonance frequency, whereby it is difficult to achieve a sufficiently good frequency stability. The inventive MEMS resonator has a resonance plate (310) which resonates in Lamé mode. The resonance plate is p+ doped material, such as silicon doped with boron, and the concentration of the p+ doping is such that the plate has a temperature coefficient of resonance frequency near to zero. The tensile stress and the second order temperature coefficient can further be reduced by doping the plate with germanium.