Patents by Inventor Antti Rahtu
Antti Rahtu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10964534Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: May 14, 2019Date of Patent: March 30, 2021Assignee: ASM InternationalInventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20190267231Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: May 14, 2019Publication date: August 29, 2019Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 10297444Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: November 28, 2017Date of Patent: May 21, 2019Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20180130666Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: November 28, 2017Publication date: May 10, 2018Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 9831094Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: July 29, 2015Date of Patent: November 28, 2017Assignee: ASM INTERNATIONAL N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 9587307Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: GrantFiled: July 24, 2013Date of Patent: March 7, 2017Assignee: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Publication number: 20160118262Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: July 29, 2015Publication date: April 28, 2016Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 9127351Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: February 13, 2013Date of Patent: September 8, 2015Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 8993055Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: October 27, 2006Date of Patent: March 31, 2015Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 8685165Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapor phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.Type: GrantFiled: September 28, 2007Date of Patent: April 1, 2014Assignee: ASM International N.V.Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
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Publication number: 20140087076Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: ApplicationFiled: July 24, 2013Publication date: March 27, 2014Applicant: ASM International N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Patent number: 8501275Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: GrantFiled: September 21, 2011Date of Patent: August 6, 2013Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Publication number: 20120189774Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: ApplicationFiled: September 21, 2011Publication date: July 26, 2012Applicant: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Patent number: 8025922Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: GrantFiled: March 14, 2006Date of Patent: September 27, 2011Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Patent number: 7704896Abstract: Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.Type: GrantFiled: January 20, 2006Date of Patent: April 27, 2010Assignee: ASM International, N.V.Inventors: Suvi P. Haukka, Marko Tuominen, Antti Rahtu
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Patent number: 7377976Abstract: A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.Type: GrantFiled: August 22, 2005Date of Patent: May 27, 2008Inventors: Mikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli
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Publication number: 20080072819Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.Type: ApplicationFiled: September 28, 2007Publication date: March 27, 2008Applicant: ASM INTERNATIONAL N.V.Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
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Publication number: 20070148350Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: October 27, 2006Publication date: June 28, 2007Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20070123060Abstract: Methods and apparatus for deposition of a film on a substrate in a reaction chamber by an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process include providing one or more reactants, and providing a volatile neutral coordinating ligand capable of coordinating at least one selected from the following: (i) one of the reactants; (ii) a reaction by-product formed during the deposition process. The neutral coordinating ligand thus improves volatility of either reactants and/or by-products, either in the gas phase or aiding in removal of species from reaction space surfaces. The neutral coordinating ligand is provided during the deposition process, either during or after reactant supply.Type: ApplicationFiled: November 15, 2006Publication date: May 31, 2007Inventor: Antti Rahtu
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Publication number: 20070036892Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: ApplicationFiled: March 14, 2006Publication date: February 15, 2007Inventors: Suvi Haukka, Marko Tuominen, Antti Rahtu