Patents by Inventor Anuja Desilva

Anuja Desilva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resist having tuned interface hardmask layer for EUV exposure
    Patent number: 10141188
    Abstract: A method is disclosed to prepare a substrate for photolithography. The method includes forming an underlayer over a surface of the substrate; depositing an interface hardmask layer on the underlayer using one of a vapor phase deposition process or an atomic layer deposition process; and forming a layer of extreme UV (EUV) resist on the interface hardmask layer, where the interface hardmask layer is comprised of material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer. Also disclosed is a structure configured for photolithography. The structure includes a substrate; an underlayer over a surface of the substrate; an interface hardmask layer disposed on the underlayer; and a layer of EUV resist disposed on the interface hardmask layer. The interface hardmask layer contains material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: November 27, 2018
    Assignee: International Business Machines Corporation
    Inventors: Michael P Belyansky, Ravi K Bonam, Anuja Desilva, Scott Halle
  • Resist having tuned interface hardmask layer for EUV exposure
    Patent number: 10134592
    Abstract: A method is disclosed to prepare a substrate for photolithography. The method includes forming an underlayer over a surface of the substrate; depositing an interface hardmask layer on the underlayer using one of a vapor phase deposition process or an atomic layer deposition process; and forming a layer of extreme UV (EUV) resist on the interface hardmask layer, where the interface hardmask layer is comprised of material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer. Also disclosed is a structure configured for photolithography. The structure includes a substrate; an underlayer over a surface of the substrate; an interface hardmask layer disposed on the underlayer; and a layer of EUV resist disposed on the interface hardmask layer. The interface hardmask layer contains material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: November 20, 2018
    Assignee: International Business Machines Corporation
    Inventors: Michael P Belyansky, Ravi K Bonam, Anuja Desilva, Scott Halle
  • Resist Having Tuned Interface Hardmask Layer For EUV Exposure
    Publication number: 20180166277
    Abstract: A method is disclosed to prepare a substrate for photolithography. The method includes forming an underlayer over a surface of the substrate; depositing an interface hardmask layer on the underlayer using one of a vapor phase deposition process or an atomic layer deposition process; and forming a layer of extreme UV (EUV) resist on the interface hardmask layer, where the interface hardmask layer is comprised of material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer. Also disclosed is a structure configured for photolithography. The structure includes a substrate; an underlayer over a surface of the substrate; an interface hardmask layer disposed on the underlayer; and a layer of EUV resist disposed on the interface hardmask layer. The interface hardmask layer contains material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer.
    Type: Application
    Filed: November 29, 2017
    Publication date: June 14, 2018
    Inventors: Michael P. Belyansky, Ravi K. Bonam, Anuja Desilva, Scott Halle
  • Resist Having Tuned Interface Hardmask Layer For EUV Exposure
    Publication number: 20180166278
    Abstract: A method is disclosed to prepare a substrate for photolithography. The method includes forming an underlayer over a surface of the substrate; depositing an interface hardmask layer on the underlayer using one of a vapor phase deposition process or an atomic layer deposition process; and forming a layer of extreme UV (EUV) resist on the interface hardmask layer, where the interface hardmask layer is comprised of material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer. Also disclosed is a structure configured for photolithography. The structure includes a substrate; an underlayer over a surface of the substrate; an interface hardmask layer disposed on the underlayer; and a layer of EUV resist disposed on the interface hardmask layer. The interface hardmask layer contains material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer.
    Type: Application
    Filed: November 29, 2017
    Publication date: June 14, 2018
    Inventors: Michael P. Belyansky, Ravi K. Bonam, Anuja Desilva, Scott Halle
  • Resist having tuned interface hardmask layer for EUV exposure
    Patent number: 9929012
    Abstract: A method is disclosed to prepare a substrate for photolithography. The method includes forming an underlayer over a surface of the substrate; depositing an interface hardmask layer on the underlayer using one of a vapor phase deposition process or an atomic layer deposition process; and forming a layer of extreme UV (EUV) resist on the interface hardmask layer, where the interface hardmask layer is comprised of material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer. Also disclosed is a structure configured for photolithography. The structure includes a substrate; an underlayer over a surface of the substrate; an interface hardmask layer disposed on the underlayer; and a layer of EUV resist disposed on the interface hardmask layer. The interface hardmask layer contains material having a composition and properties tuned to achieve a certain secondary electron yield from the interface hardmask layer.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: March 27, 2018
    Assignee: International Business Machines Corporation
    Inventors: Michael P Belyansky, Ravi K Bonam, Anuja Desilva, Scott Halle